MITSUBISHI RA 13 H 1317 M Service Manual

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MITSUBISHI RF MOSFET MODULE

RA13H1317M

135-175MHz 13W 12.5V MOBILE RADIO

DESCRIPTION

The RA13H1317M is a 13-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 135- to 175-MHz
range.

The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.

FEATURES

• Enhancement -Mode MOSFET Transistors

(IDD≅0 @ VDD=12.5V, VGG=0V)

• P

>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

out

• Broadband Frequency Range: 135-175 MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=5V

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain current

with the gate voltage and controlling the output power with the
input power

BLOCK DIAGRAM

BLOCK DIAGRAM

1

1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)

2

)

out

3

4

5

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM
RA13H1317M-E01

RA13H1317M-01

(Japan - Packed without desiccator)

Antistatic tray,

10 modules/tray

RA13H1317M

MITSUBISHI ELECTRIC

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23 Dec 2002

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MITSUBISHI RF POWER MODULE

RA13H1317M

MAXIMUM RATINGS

(T

=+25°C, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V

Pin Input Power 100 mW

P

Output Power

out

T

Operation Case Temperature Range -30 to +110 °C

case(OP)

T

Storage Temperature Range

stg

f=135-175MHz,
ZG=ZL=50Ω

20 W

-40 to +110 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 135 175 MHz

P

Output Power 13 W

out

ηT Total Efficiency 40 %

2fo 2nd Harmonic -25 dBc

ρin Input VSWR 3:1 —

IGG Gate Current

— Stability

— Load VSWR Tolerance

VDD=12.5V
VGG=5V
Pin=50mW

VDD=10.0-15.2V, Pin=25-70mW,
P

<20W (VGG control), Load VSWR=3:1

out

VDD=15.2V, Pin=50mW, P

=13W (VGG control),

out

Load VSWR=20:1

1 mA

No parasitic oscillation —

No degradation or

destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.

RA13H1317M

MITSUBISHI ELECTRIC

2/9

23 Dec 2002

OBSERVE HANDLING PRECAUTIONS

and INPUT VSWR versus FREQUENCY

OUTPUT POWER, POWER GAIN and

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

OUTPUT POWER and DRAIN CURRENT

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

versus DRAIN VOLTAGE

TYPICAL PERFORMANCE

OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY

(W)

out

(-)

30
25

in

20
15

η

10

INPUT VSWR ρ

5

OUTPUT POWER P

0

125 135 145 155 165 175 185

ρ

in

FREQUENCY f(MHz)

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-15 -10 -5 0 5 10 15 20

Gp

I

DD

INPUT POWER P in(dBm)

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-15 -10 -5 0 5 10 15 20

Gp

IDD

INPUT POWER Pin(dBm)

ELECTROSTATIC SENSITIVE DEVICE

(T

=+25°C, ZG=ZL=50Ω, unless otherwise specified)

case

120

P

out

P

out

f=175MHz,
VDD=12.5V,
VGG=5V

100
80
60
40
20
0

(%)

T

η

TOTAL EFFICIENCY

5

(A)

4

DD

3

2

1

DRAIN CURRENT I

0

5

(A)

4

DD

3

2

1

DRAIN CURRENT I

0

P

out

T

VDD=12.5V
Pin=50mW

f=135MHz,
VDD=12.5V,
VGG=5V

-20

-30

-40

-50

rd

HARMONICS (dBc)

-60

-70
125 135 145 155 165 175 185

50

40

30

(dBm)

out

20

P

OUTPUT POWER

10

POWER GAIN Gp(dB)

0

-15 -10 -5 0 5 10 15 20

3

FREQUENCY f(MHz)

Gp

I

DD

INPUT POWER Pin(dBm)

VDD=12.5V
Pin=50mW

nd

2

below -60dBc

MITSUBISHI RF POWER MODULE

RA13H1317M

P

f=155MHz,
VDD=12.5V,
VGG=5V

5

out

(A)

4

DD

3

2

1

DRAIN CURRENT I

0

30

f=135MHz,

25

(W)

VGG=5V,

out

Pin=50mW

20
15
10

5

OUTPUT POWER P

0

2 4 6 8 10 12 14 16

DRAIN VOLTAGE VDD(V)

RA13H1317M

6
5

(A)

DD

P

out

I

DD

4
3
2
1

DRAIN CURRENT I

0

MITSUBISHI ELECTRIC

30

f=155MHz,

25

(W)

VGG=5V,

out

Pin=50mW

20
15
10

5

OUTPUT POWER P

0

2 4 6 8 10 12 14 16

DRAIN VOLTAGE VDD(V)

P

out

6
5

(A)

DD

4
3

I

DD

2
1

DRAIN CURRENT I

0

23 Dec 2002

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