MITSUBISHI RA08N1317M User Manual

ELECTROSTATIC SENSITIVE DEVICE
2
1
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RA
RA08N1317
RARA
08N1317M
08N131708N1317
M
MM
RoHS Compliance ,
DESCRIPTION
The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=9.6V, VGG=0V)
• P
>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW
out
ηT>50% @ P
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power with the input power
=8W (VGG control), VDD=9.6V, Pin=20mW
out
135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
BLOCK DIAGRAM
1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (P 5 RF Ground (Case)
)
out
PACKAGE CODE: H46S
3
4
5
RoHS COMPLIANCE
• RA08N1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM RA08N1317M-101
Antistatic tray,
50 modules/tray
RA08N1317M
30 Jun 2010
1/9
ELECTROSTATIC SENSITIVE DEVICE
,
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG=0V, Pin=0W 16 V VDD Drain Voltage VGG<3.5V 13.2 V VGG Gate Voltage VDD<9.6V, Pin<20mW 4 V
Pin Input Power 30 mW
P
Output Power 10 W
out
T
case(OP)
T
The above parameters are independently guaranteed.
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
(T
=+25°C, unless otherwise specified)
case
f=135-175MHz, ZG=ZL=50
RoHS COMPLIANCE
Silicon RF Power Semiconductors
RA
RA08N1317
08N1317MMMM
RARA
08N131708N1317
-30 to +90 °C
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 135 - 175 MHz
P
Output Power
out
ηT
2fo 2nd Harmonic - - -25 dBc
ρin
IGG Gate Current
Stability
Load VSWR Tolerance
All parameters, conditions, ratings, and limits are subject to change without notice.
Total Efficiency 50 - - %
Input VSWR - - 4:1
VDD=9.6V,VGG=3.5V, Pin=20mW
P
=8W (VGG control),
out
VDD=9.6V, Pin=20mW
VDD=4.8-13.2V, Pin=10-30mW, P Load VSWR=4:1
VDD=13.2V, Pin=20mW, P Load VSWR=20:1
=8W (VGG control),
out
<8W (VGG control)
out
8 - - W
- 1 - mA
No parasitic oscillation
No degradation or destroy —
RA08N1317M
30 Jun 2010
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and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
14
P
12
(W)
out
(-)
10
in
ρ
8 6 4
INPUT VSWR
2
OUTPUT POWER P
0
130 140 150 160 170 180
ρρρρ
FREQUENCY f(MHz)
out
ηηηη
T
@P
=8W
out
in
50
40
Gp
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm)
I
50
40
Gp
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
-15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50, unless otherwise specified)
case
140
@VGG=3.5V
@P
=8W
out
VDD=9.6V Pin=20mW
DD
f=135MHz, VDD=9.6V,
VGG=3.5V
120 100 80 60 40 20 0
P
out
(%)
T
η
TOTAL EFFICIENCY
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
5
P
out
(A)
4
DD
3
2
I
DD
f=175MHz, VDD=9.6V, VGG=3.5V
1
DRAIN CURRENT I
0
RoHS COMPLIANCE
-20
-30
nd
2
@P
=8W
-40
-50
HARMONICS (dBc)
-60
-70 130 140 150 160 170 180
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
out
FREQUENCY f(MHz)
Gp
I
DD
-15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm)
VDD=9.6V Pin=20mW
rd
3
@P
=8W
out
Silicon RF Power Semiconductors
RA
RA08N1317
08N1317MMMM
RARA
08N131708N1317
5
P
out
f=160MHz, VDD=9.6V, VGG=3.5V
(A)
4
DD
I
3
2
1
DRAIN CURRENT
0
25
f=135MHz,
(W)
VGG=3.5V,
20
out
Pin=20mW
15
10
5
OUTPUT POWER P
0
2 4 6 8 10 12
DRAIN VOLTAGE VDD(V)
RA08N1317M
5
4
P
out
(A)
DD
3
I
DD
2
1
DRAIN CURRENT I
0
25
f=160MHz,
(W)
VGG=3.5V,
20
out
Pin=20mW
15
P
out
10
I
5
DD
OUTPUT POWER P
0
5
4
(A)
DD
3
2
1
DRAIN CURRENT I
0
2 4 6 8 10 12
DRAIN VOLTAGE VDD(V)
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