MITSUBISHI RA08H1317M User Manual
ELECTROSTATIC SENSITIVE DEVICE
2
1
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RA
RA08H1317
RARA
08H1317M
08H131708H1317
M
MM
RoHS Compliance ,
DESCRIPTION
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
for 12.5-volt portable radios that operate in the 135- to 175-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• P
>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW
out
• ηT>40% @ P
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
=8W (VGG control), VDD=12.5V, Pin=20mW
out
135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO
BLOCK DIAGRAM
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (P
5 RF Ground (Case)
)
out
PACKAGE CODE: H46S
3
4
5
RoHS COMPLIANCE
• RA08H1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA08H1317M-101
Antistatic tray,
50 modules/tray
RA08H1317M
30 Jun 2010
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG=0V, Pin=0W 16 V
VDD Drain Voltage VGG<3.5V 13.2 V
VGG Gate Voltage VDD<12.5V, Pin<20mW 4 V
Pin Input Power 40 mW
P
Output Power 10 W
out
T
case(OP)
T
The above parameters are independently guaranteed.
Operation Case Temperature Range
Storage Temperature Range -40 to +110 °C
stg
(T
=+25°C, unless otherwise specified)
case
f=135-175MHz,
ZG=ZL=50Ω
RoHS COMPLIANCE
Silicon RF Power Semiconductors
RA
RA08H1317
08H1317MMMM
RARA
08H131708H1317
-30 to +90 °C
ELECTRICAL CHARACTERISTICS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 135 - 175 MHz
P
Output Power
out
ηT
2fo 2nd Harmonic - - -25 dBc
ρin
IGG Gate Current
— Stability
— Load VSWR Tolerance
All parameters, conditions, ratings, and limits are subject to change without notice.
Total Efficiency 40 - - %
Input VSWR - - 4.4:1 —
VDD=12.5V,VGG=3.5V, Pin=20mW
P
=8W (VGG control),
out
VDD=12.5V,
Pin=20mW
VDD=5-13.2V, Pin=10-30mW, P
Load VSWR=4:1
VDD=13.2V, Pin=20mW, P
Load VSWR=20:1
out
=8W (VGG control),
out
<9W (VGG control),
8 - - W
- 1 - mA
No parasitic oscillation
No degradation or destroy —
—
RA08H1317M
30 Jun 2010
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and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
TYPICAL PERFORMANCE
OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY
14
12
(W)
out
(-)
in
ρ
INPUT VSWR
OUTPUT POWER P
P
@VGG=3.5V
10
out
8
6
4
2
0
120 130 140 150 160 170 180 190
ηηηη
@P
=8W
T
out
ρρρρ
@P
=8W
in
out
FREQUENCY f(MHz)
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
Gp
I
DD
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
Gp
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(T
=+25°C, ZG=ZL=50Ω, unless otherwise specified)
case
VDD=12.5V
Pin=20mW
I
DD
P
out
f=135MHz,
VDD=12.5V,
VGG=3.5V
P
out
f=175MHz,
VDD=12.5V,
VGG=3.5V
140
120
100
80
60
40
20
0
(%)
T
η
TOTAL EFFICIENCY
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
5
(A)
4
DD
3
2
1
DRAIN CURRENT I
0
-20
-30
-40
-50
HARMONICS (dBc)
-60
-70
120 130 140 150 160 170 180 190
50
40
30
(dBm)
out
20
P
OUTPUT POWER
10
POWER GAIN Gp(dB)
0
Silicon RF Power Semiconductors
RoHS COMPLIANCE
VDD=12.5V
VGG=3.5V
Pin=20mW
rd
3
@P
=8W
out
FREQUENCY f(MHz)
Gp
I
DD
-15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
RA
RA08H1317
08H1317MMMM
RARA
08H131708H1317
nd
2
@P
=8W
out
P
out
f=155MHz,
VDD=12.5V,
VGG=3.5V
5
(A)
4
DD
I
3
2
1
DRAIN CURRENT
0
20
18
f=135MHz,
(W)
VGG=3.5V,
16
out
Pin=20mW
14
12
10
8
6
4
2
OUTPUT POWER P
0
2 4 6 8 10 12
DRAIN VOLTAGE VDD(V)
RA08H1317M
6
5
(A)
DD
4
P
out
I
DD
3
2
1
DRAIN CURRENT I
0
20
18
f=155MHz,
(W)
VGG=3.5V,
16
out
Pin=20mW
14
12
10
8
6
4
2
OUTPUT POWER P
0
2 4 6 8 10 12
DRAIN VOLTAGE VDD(V)
P
out
I
DD
6
5
(A)
DD
4
3
2
1
DRAIN CURRENT I
0
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