MITSUBISHI PS21963-4ES Technical data

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4ES

TRANSFER-MOLD TYPE

INSULATED TYPE

PS21963-4ES

INTEGRATED POWER FUNCTIONS

600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion. Open emitter type.

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS

• For upper-leg IGBTS :Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection.

• For lower-leg IGBT

S : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC).

• Fault signaling : Corresponding to an SC fault (Lower-leg IGBT) or a UV fault (Lower-side supply).

• Input interface : 3V, 5V line (High Active).

•UL Approved : Yellow Card No. E80276

APPLICATION

AC100V~200V inverter drive for small power motor control.

Fig. 1 PACKAGE OUTLINES

Code

20×1.778(=35.56 )

Type name

Lot No.

14×2.54(=35.56)

0.28

±0.2

1.778

17 1

2-R1.6

0.28

±0.2

2.54

0.5

HEAT SINK SIDE

3 MIN

±0.5

±0.3

0.5 0.5

16-0.5

(1)

±0.5

33.7

8-0.6

0.5

4-C1.2

±0.5

9.5

±0.5

5.5

±0.5

29.2

±0.5

14.4

±0.5

18.9

(2.656)

(1.2)

0.4

±0.5

14.4

0.4

(1.2)

3.5

±0.05

1.5

(3.5)

0.8

2.5 MIN

DETAIL A DETAIL B

(3.3)

HEAT SINK SIDE

(0°~5°)

(2.756)

Dimensions in mm

TERMINAL CODE

1. (VNC)

2. VUFB

3. VVFB

4. VWFB

5. UP

6. VP

7. WP

8. VP1

9. VNC *

10. UN

11. VN

12. WN

13. VN1

14. FO

15. CIN

16. VNC *

17. NC

18. NW

19. NV

20. NU

21. W

22. V

23. U

24. P

25. NC

1.5min

*) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and

leave another one open.

Mar. 2007

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4ES

TRANSFER-MOLD TYPE

INSULATED TYPE

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART

ConditionSymbol Parameter Ratings Unit

V VCC(surge) VCES

±IC ±ICP

PC Tj

Supply voltage Supply voltage (surge) Collector-emitter voltage Each IGBT collector current Each IGBT collector current (peak) Collector dissipation Junction temperature

Applied between P-NU, NV, NW

C = 25°C C = 25°C, less than 1ms

C = 25°C, per 1 chip

(Note 1)

450 500 600

24.3

–20~+125

Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ TC ≤ 100°C). However, to

ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C).

CONTROL (PROTECTION) PART

ConditionSymbol Parameter Ratings Unit

VDB

VIN

VFO IFO

VSC

Control supply voltage

Input voltage

Fault output supply voltage Fault output current

Current sensing input voltage

Applied between V

Applied between VUFB-U, VVFB-V, VWFB-W Applied between U

Applied between FO-VNC

Sink current at FO terminal Applied between CIN-V

P1-VNC, VN1-VNC

P, VP, WP, UN, VN,

WN-VNC

–0.5~V

D+0.5

V V V A

A W °C

TOTAL SYSTEM

Symbol Ratings Unit

CC(PROT)

TC Tstg

Viso

Note 2: T

Self protection supply voltage limit (short circuit protection capability)

Module case operation temperature

Storage temperature

Isolation voltage

C measurement point

IGBT chip position

FWD chip position

Parameter

Control terminals

11.6mm

Power terminals

D = 13.5~16.5V, Inverter part

V Tj = 125°C, non-repetitive, less than 2µs

60Hz, Sinusoidal, 1 minute, Between pins and heat-sink plate

3mm

Condition

point

Heat sink side

(Note 2)

DIP-IPM

400

–20~+100

–40~+125

1500

°C

rms

Mar. 2007

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4ES

TRANSFER-MOLD TYPE

INSULATED TYPE

THERMAL RESISTANCE

Parameter

Rth(j-c)Q

Rth(j-c)F

Note 3 : Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIP-IPM

Junction to case thermal resistance (Note 3)

and heat-sink. The contacting thermal resistance between DIP-IPM case and heat sink (R conductivity of the applied grease. For reference, R the thermal conductivity is 1.0W/m·k.

Inverter IGBT part (per 1/6 module)

Inverter FWD part (per 1/6 module)

ConditionSymbol

th(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and

th(c-f)) is determined by the thickness and the thermal

Min.

Limits

Typ. Max.

—

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART

Symbol

CE(sat)

VEC ton trr tc(on) toff tc(off)

ICES

Parameter

Collector-emitter saturation voltage

FWD forward voltage

Switching times

Collector-emitter cut-off current

Condition

VD = VDB = 15V

VIN = 5V

C = 8A, Tj = 25°C

IC = 8A, Tj = 125°C

Tj = 25°C, –IC = 8A, VIN = 0V

CC = 300V, VD = VDB = 15V

IC = 8A, Tj = 125°C, VIN = 0 ↔ 5V

Inductive load (upper-lower arm)

CE = VCES

j = 25°C

Tj = 125°C

Min. Typ. Max.

0.60

Limits

—

1.70

—

1.80

—

1.90

1.10

—

0.30

—

0.40

—

1.40

—

0.40

— —

2.20

2.30

2.35

1.70

0.60

2.00

0.75

4.1

5.4

—

Unit

°C/W

Unit

µs µs µs µs µs

CONTROL (PROTECTION) PART

— — — —

4.9 —

20 —

0.8

Limits

— — — — — —

0.48

1.00 — — — — —

2.1

1.3

0.65

2.80

0.55

2.80

0.55

0.95

0.53

1.50

12.0

12.5

13.0

Symbol

VFOH VFOL

VSC(ref) IIN UVDBt UVDBr UVDt UVDr tFO Vth(on)

Vth(off)

Vth(hys)

Parameter Condition

Circuit current

Fault output voltage

Short circuit trip level Input current

Control supply under-voltage protection

Fault output pulse width ON threshold voltage OFF threshold voltage ON/OFF threshold hysteresis

voltage

D = VDB = 15V

IN = 5V

D = VDB = 15V

IN = 0V

SC = 0V, FO terminal pull-up to 5V by 10kΩ

V V

SC = 1V, IFO = 1mA

j = 25°C, VD = 15V (Note 4)

IN = 5V

Total of V

P1-VNC, VN1-VNC

VUFB-U, VVFB-V, VWFB-W Total of V

P1-VNC, VN1-VNC

VUFB-U, VVFB-V, VWFB-W

Trip level

j ≤ 125°C

Reset level Trip level Reset level

(Note 5)

Applied between U

P, VP, WP, UN, VN, WN-VNC

Min. Typ. Max.

0.43

0.70

10.0

10.5

10.3

10.8

0.35

Note 4 : Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is

less than 1.7 times of the current rating.

5:Fault signal is asserted corresponding to a short circuit or lower side control supply under-voltage failure.

—

2.6 —

—

Unit

V V V

V V V V

µs

V V

Mar. 2007

+ 5 hidden pages