MITSUBISHI PM100RSE060 Technical data

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MITSUBISHI <INTELLIGENT POWER MODULES>

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RSE060

PM100RSE060

APPLICATION

General purpose inverter, servo drives and other motor controls

FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-

formance is improved by 1µm fine rule process.
For example, typical V

b) Using new Diode which is designed to get soft reverse

recovery characteristics.

•3φ 100A, 600V Current-sense IGBT for 15kHz switching

• 30A, 600V Current-sense regenerative brake IGBT

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for over­current, short-circuit, over-temperature & under-voltage

• Acoustic noise-less 11kW class inverter application

PM100RSE060

FLAT-BASE TYPE

FLAT-BASE TYPE

INSULATED PACKAGE

INSULATED PACKAGE

CE(sat)=1.7V

PACKAGE OUTLINES Dimensions in mm

110

17

2020

17.5

32.6

±0.5

2

31.6

2-2.54 2-2.54 6-2.542-2.54

17.02

3.22

BPN

WVU

0.5

±0.3

24.5

A

95

10.16 10.16 10.16

12

10

16- 0.64

LABEL

67.4

±1

±0.5

4-φ5.5

MOUNTING HOLES

1615141312

PBT

6-M5NUTS

2-φ2.54

4-R6

±1

±0.5

89

74

22

19.4

4

10978654321

11

2626

21.2

22

+1.0
–0.5

Screwing depth
Min9.0

Terminal code

1. V

2. U

3. V

4. V

5. V

6. V

7. V

8. W

9. V

10. V

φ2.54

3.22

11.61.6

UPC

P

UP1

VPC

P

VP1

WPC

P

WP1

NC

2-2.54

A : DETAIL

11. V

12. B

13. U

14. V

15. W

16. F

N1

r

N

N

N

O

4.5

0.64

10.6

Sep. 2001

INTERNAL FUNCTIONS BLOCK DIAGRAM

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RSE060

FLAT-BASE TYPE

INSULATED PACKAGE

Rfo=1.5kΩ

Br Fo

Gnd In Fo Vcc

Gnd

Si Out

V

Rfo

WNV

NC

Gnd In Fo Vcc

Gnd

Si Out

N1

V

Gnd In Fo Vcc

Gnd

N

Si Out

U

Gnd In Fo Vcc

Gnd

Th

N

Si Out

WPV

V

WPC

Gnd In Vcc

Gnd

Si Out

WP1

V

VPC

Gnd In Vcc

Gnd

VPV

VP1

V

UPC

Gnd In Vcc

Si Out

Gnd

UPV

Si Out

UP1

BNWVPU

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART

Symbol Parameter Condition Ratings Unit

VCES

±IC
±ICP

PC
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature

D = 15V, VCIN = 15V

V

C = 25°C

T
T

C = 25°C
C = 25°C

T

600
100
200
328

–20 ~ +150

V
A

A
W
°C

BRAKE PART

Symbol Parameter Condition Ratings Unit
VCES
IC
ICP
PC
VR(DC)
IF
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Rated DC Reverse Voltage
FWDi Forward Current
Junction Temperature

V

D = 15V, VCIN = 15V
C = 25°C

T
T

C = 25°C
C = 25°C

T
T

C = 25°C
C = 25°C

T

600

30

60
176
600

30

–20 ~ +150

CONTROL PART

Symbol Parameter Condition Ratings Unit

VD

VCIN

FO

V
IFO

Supply Voltage

Input Voltage

Fault Output Supply Voltage
Fault Output Current

Applied between : V

Applied between : UP-VUPC, VP-VVPC

Applied between : FO-VNC
Sink current at FO terminal

UP1-VUPC

VVP1-VVPC, VWP1-VWPC, VN1-VNC

WP-VWPC, UN • VN • WN • Br-VNC

20

20

20

20

Sep. 2001

V
A
A

W

V
A

°C

V

V

V

mA