MITSUBISHI PM100CLA060 Technical data

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PM100CLA060

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100CLA060

FLAT-BASE TYPE

INSULATED PACKAGE

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which

performance is improved by 1µm fine rule process.
For example, typical V

b) I adopt the over-temperature conservation by Tj detection of

CSTBT chip, and error output is possible from all each con­servation upper and lower arm of IPM.

c) New small package

Reduce the package size by 10%, thickness by 22% from
S-DASH series.

•3φ 100A, 600V Current-sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short­circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)

• Acoustic noise-less 11kW class inverter application

ce(sat)=1.5V @Tj=125°C

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

12011

106

1616

16 15.25

6-23-23-23-2

UVW

12 22

19-■0.5

2-φ5.5

MOUNTING HOLES

5511.75

32

13.5

13

31

2-φ2.5

Terminal code

1. VUPC

2. UFO

3. UP

4. VUP1

5. VVPC

6. VFO

7. VP

8. VVP1

9. VWPC

10. WFO

16

+

1

–

0.5

11. WP

12. VWP1

13. VNC

14. VN1

15. NC

16. UN

17. VN

18. WN

19. Fo

3

12

17.5 17.5

14.5

6-M5 NUTS

7

(SCREWING DEPTH)

12

7

19.75

NP

10.75

3.25

19.75

1591319

B

32.75 23 23 23

Apr. 2004

INTERNAL FUNCTIONS BLOCK DIAGRAM

V

NC

Fo V

NC

V

N1

W

N

N

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100CLA060

FLAT-BASE TYPE

INSULATED PACKAGE

WPV

U

N

V

WPC

WF

WP1

O

V

VPC

VPV

VF

VP1

O

V

UPC

UPV

UF

UP1

O

Gnd In Fo Vcc

Gnd Si Out OT

NC N W V U P

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART

Symbol Parameter Condition Ratings Unit

VCES

±IC
±ICP

PC
Tj

Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction T emperature

V

D = 15V, VCIN = 15V

T

C = 25°C

T

C = 25°C

T

C = 25°C (Note-1)

600
100
200
356

–20 ~ +150

V
A

A
W
°C

CONTROL PART

Symbol Parameter Condition Ratings Unit

VD

VCIN

VFO
IFO

Supply Voltage

Input Voltage

Fault Output Supply Voltage
Fault Output Current

Applied between : V

Applied between : UP-VUPC, VP-VVPC

Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC

Sink current at UFO, VFO, WFO, FO terminals

UP1-VUPC

VVP1-VVPC, VWP1-VWPC, VN1-VNC

WP-VWPC, UN • VN • WN-VNC

FO-VNC

20

20

20
20

Apr. 2004

V

V

V

mA

TOTAL SYSTEM

Symbol

V

CC(PROT)

V

CC(surge)

TC
Tstg

Viso

Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage

(Note-1) Tc (base plate) measurement point is below.

Parameter

V

D = 13.5 ~ 16.5V, Inverter Part,
j = +125°C Start

T
Applied between : P-N, Surge value

(Note-1)

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

Top view

Condition

UVW

MITSUBISHI <INTELLIGENT POWER MODULES>

PM100CLA060

FLAT-BASE TYPE

INSULATED PACKAGE

Ratings

400
500

–20 ~ +100
–40 ~ +125

2500

B

NP

Unit

V

°C
°C

V

rms

V

THERMAL RESISTANCES

Tc

Symbol

Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F

Rth(c-f)

Junction to case Thermal
Resistances

Contact Thermal Resistance

Parameter

Inverter IGBT part (per 1/6) (Note-2)
Inverter FWDi part (per 1/6) (Note-2)
Inverter IGBT part (per 1/6) (Note-1)
Inverter FWDi part (per 1/6) (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)

* If you use this value, Rth(f-a) should be measured just under the chips.
(Note-2) Tc (under the chip) measurement point is below.

axis

arm

X
Y

IGBT

28.3
–8.5

UP

FWDi

28.0

1.7

VP WP UN VN WN

FWDi

IGBT

FWDi

IGBT

87.2

87.0

65.2

65.0

1.7

–8.5

1.7

–8.5

Condition

IGBT

39.3

6.5

FWDi

39.5
–5.2

Bottom view

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART

= 15V

Condition

(Fig. 5)

Symbol

CE(sat)

V
VEC

ton
trr
tc(on)
toff
tc(off)

ICES

Parameter

Collector-Emitter
Saturation Voltage
FWDi Forward Voltage

Switching Time

Collector-Emitter
Cutoff Current

D = 15V, IC = 100A

V
V

CIN = 0V, Pulsed (Fig. 1)

–I

C = 100A, VD = 15V, VCIN = 15V (Fig. 2)

D = 15V, VCIN = 0V↔15V

V
V

CC = 300V, IC = 100A

T

j = 125°C

Inductive Load (Fig. 3,4)

VCE = V

CES

, V

CIN

IGBT

54.0

6.5

FWDi

53.7
–5.2

T

j = 25°C

T

j = 125°C

T

j = 25°C

T

j = 125°C

Min.

—
—
—
—

—

(unit : mm)

FWDi

IGBT

75.7

76.0
–5.2

6.5

Min. Typ. Max.

—
—
—

0.5

—
—
—
—
—
—

Limits

Typ. Max.

0.27*

—

0.43*

—
—
—

0.038

—

Limits

1.6

1.5

2.2

1.0

0.2

0.4

1.2

0.5

—
—

0.35

0.56

2.1

2.0

3.3

2.4

0.4

1.0

2.5

1.0
1

10

Unit

°C/W

Unit

V
V

µs

mA

Apr. 2004