Mitsubishi PD8933 Datasheet
TYPE
NAME
MITSUBISHI LASER DIODES
PD8XX3 SERIES
InGaAs AVALANCHE PHOTO DIODES
PD8933
DESCRIPTION
PD8XX3 series are InGaAs avalanche photodiode which has
a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving
the light having a wavelength band of 1000 to 1600nm. This
photodiode features low noise, a high quantum efficiency and
a high speed response is suitable for the light receiving
element for long - distance optical communications.
FEATURES
• φ35 µ m active diameter
• Low noise
• High speed response
• Small dark current
• High quantum efficiency
APPLICATION
Receiber for long-distance fiber-optic communication systems
ABSOLUTE MAXIMUM RATING
Symbol Conditions Ratings Unit
R
I
IF
T
Tstg
C
Reverse current
Forward current
Case temperature
Storage temperature
ELECTRICAL/OPTICAL CHARACTERISTICS
Symbol Test conditions
V
Ct
ID
η
fc
(BR)R
Breakdown voltage
Capacitance
Dark current
Quantum efficiency
Cutoff frequency (-3dB)
Parameter
parameter
-
-
-
-
(TC = 25˚C)
I
R = 100
µ A
VR = 0.9V (BR) R,f = 1MHz
VR = 0.9V (BR) R
M = 1, λ = 1550nm
= 10,RL = 50Ω, -3dB
M
500
2
40~+85
-
-40~+100
Min.
40
-
-
-
1.8
µA
mA
˚C
˚C
Limits
Typ. Max.
60
0.5
30
80
2.5
0.7
90
60
Unit
V
pF
nA
SEP
%
GHz
.2000
-
-
OUTLINE DRAWINGS
PD8933
MITSUBISHI LASER DIODES
PD8XX3 SERIES
InGaAs AVALANCHE PHOTO DIODES
Dimension : mm
SEP
.2000
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