TYPE
NAME
MITSUBISHI LASER DIODES
FOR OPTICAL INFORMATION SYSTEMS
ML60125R, ML601J25
DESCRIPTION
ML6XX25 is a high power AlGaAs semiconductor
laser which provides a stable, single transverse
mode oscillation with emission wavelength of
785nm and standard light output of 30mW.
ML6XX25 is produced by the MOCVD crystal
growth method which is excellent in mass
production and characteristics uniformity . This is
a high -performance , highly reliable , and long
life semiconductor laser.
FEATURES
O Output 30mW (CW) 45mW (pulse)
O Short astigmatic distance
O MQW * active layer
* : Multiple Quantum Well
O High volume production capacity
Built-in monitor photodiode (ML60125R)
APPLICATION
Optical disc drive
ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol Parameter Conditions Ratings Unit
Po
VRL Reverse voltage (laser diode) - 2 V
VRD(Note 3) Reverse voltage (Photodiode) -
IFD(Note 3)
Tc
Tstg
Light output power
Forward current (Photodiode) -
Case temperature -
Storage temperature -
CW
Pulse(Note 2) 50
35
30
10
-40~ +60
-40~ +100
mW
V
mA
˚C
˚C
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime.As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Department.
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1µs
Note3: Applicable to ML60125R
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25˚C)
Symbol Parameter Test conditions Min. Typ. Max Unit
Ith
Iop
η
Vop Operating voltage 2.0 2.5 V
λp Peak wavelength
θ
θ
Im(Note 4)
ID(Note 4)
Ct(Note 4)
Note 4: Applicable to ML60125R
Note 5:RL=the load resistance of photodiode
Threshold current
Operation current
Slope efficiency
Beam divergence angle
(parallel)
Beam divergence angle
(perpendicular)
Monitoring output current
(Photodiode)
Dark current (Photodiode)
Capacitance (Photodiode)
CW
CW,Po=30mW - 85 110 mA
CW,Po=30mW
CW,Po=30mW
CW,Po=30mW
CW,Po=30mW
CW,Po=30mW
CW,Po=30mW,VRD=1V
RL=10(Note 5)
VRD=10V
VRD=5V - 7 - pF
- 35 50
-
-
775 785 795 nm
9
22
-
- -
0.6
10
25
0.4
-
11 deg.
28 deg.
- mA
0.5
MITSUBISHI
ELECTRIC
mA
mW/mA
µA
as of July'98
OUTLINE DRAWINGS
MITSUBISHI LASER DIODES
FOR OPTICAL INFORMATION SYSTEMS
CASE
PD
LD
CASE
LD
NC
as of July'98
MITSUBISHI
ELECTRIC