MITSUBISHI SEMICONDUCTORS <HVIC>
M81707FP
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION
M81707FP is high voltage Power MOSFET and IGBT module driver for half bridge applications.
FEATURES
¡FLOATING SUPPLY VOLTAGE ................................. 600V
¡OUTPUT CURRENT ............................................. ±100mA
¡UNDERVOLTAGE LOCKOUT
¡SOP-16 PACKAGE
APPLICATIONS
IGBT/MOSFET driver
BLOCK DIAGRAM
PIN CONFIGURATION (TOP VIEW)
LO
1
2
V
com
3
V
CC2
4
NC
5
NC
6
S
V
7
V
B
8
HO
NC:NO CONNECTION
Outline:16P2N
16
NC
15
GND
14
LIN
13
NC
HIN
12
V
11
CC
10
NC
9
NC
V
CC
HIN
LIN
GND
7
V
11
V
REG
V
12
14
15
REG/VCC
LEVEL
SHIFT
V
REG/VCC
LEVEL
SHIFT
PULSE
GEN
PULSE
GEN
HV
LEVEL
SHIFT
HV
LEVEL
SHIFT
UV DETECT
FILTER
UV DETECT
FILTER
INTER
LOCK
INTER
LOCK
R Q
S
R Q
S
B
8
HO
6
V
S
3
V
CC2
1
LO
2
V
com
Mar. 2006
MITSUBISHI SEMICONDUCTORS <HVIC>
M81707FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified)
Symbol Parameter Test conditions Ratings Unit
V
B
VS
VBS
VHO
VCC2
Vcom
VCC2com
VCC
VLO
VIN
dVS/dt
Pd
K q
Rth(j-c)
Tj
Topr
Tstg
TL
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Floating Supply Absolute Voltage
Output Standard Voltage
Low Side Floating Supply Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
Allowable Offset Voltage Transient
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
Solder Heat Resistance
V
BS = VB–VS
VCC2com = VCC2–Vcom
HIN, LIN
Ta = 25°C, On Board
Ta > 25°C, On Board
Pb Free
–0.5 ~ 624
V
B–24 ~ VB+0.5
–0.5 ~ 24
VS–0.5 ~ VB+0.5
–0.5 ~ 624
VCC2–24 ~ VCC2+0.5
–0.5 ~ 24
–0.5 ~ 24
Vcom–0.5 ~ VCC2+0.5
–0.5 ~ VCC+0.5
±50
0.89
8.9
45
–40 ~ 125
–40 ~ 100
–55 ~ 125
255:10s, max 260
V
V
V
V
V
V
V
V
V
V
V/ns
W
mW/°C
°C/W
°C
°C
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol UnitParameter Test conditions
VB
VS
VBS
VHO
VCC2
Vcom
VCC2com
VCC
VLO
VIN
* For proper operation, the device should be used within the recommended conditions.
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Floating Supply Absolute Voltage
Output Standard Voltage
Low Side Floating Supply Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
V
B > 10V
VBS = VB–VS
VCC2 > 10V
VCC2com = VCC2–Vcom
HIN, LIN
THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING)
2.0
1.5
1.0
Limits
Min. Typ. Max.
VS+10
–5
10
VS
Vcom+10
–5
10
10
Vcom
0
—
—
—
—
—
—
—
—
—
—
VS+20
500
20
VB
Vcom+20
500
20
20
VCC2
VCC
V
V
V
V
V
V
V
V
V
V
Package Power Dissipation Pd (W)
0.5
0
Temperature Ta (°C)
1251007550250
Mar. 2006
MITSUBISHI SEMICONDUCTORS <HVIC>
M81707FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VCC2com ( = VCC2–Vcom) = VBS ( = VB–VS ) = 15V, VS = Vcom = 0V, unless
otherwise specified)
Symbol UnitParameter Test conditions
V
FS
I
IFcom
IBS
ICC
ICC2
IBSH
ICCH
ICC2H
IBSL
ICCL
ICC2L
VOH
VOL
VIH
VIL
VINh
IIH5
IIH15
IIL
VBSuvr
VBSuvh
tVBSuv
VCCuvr
VCCuvh
tVCCuv
IOH
IOL
ROH
ROL
tdLH(HO)
tdHL(HO)
trH
tfH
tdLH(LO)
tdHL(LO)
trL
tfL
∆tdLH
∆tdHL
VOPW
* Typ. is not specified.
Floating Supply Leakage Current
Vcom Floating Supply Leakage Current
VBS Standby Current
CC Standby Current
V
CC2 Standby Current
V
BS Standby Current H
V
CC Standby Current H
V
CC2 Standby Current H
V
BS Standby Current L
V
CC Standby Current L
V
CC2 Standby Current L
V
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
Input Hysteresis Voltage
High Level Input Bias Current 5
High Level Input Bias Current 15
Low Level Input Bias Current
BS Supply UV Reset Voltage
V
BS Supply UV Hysteresis Voltage
V
BS Supply UV Filter Time
V
CC Supply UV Reset Voltage
V
CC Supply UV Hysteresis Voltage
V
CC Supply UV Filter Time
V
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On Resistance
Output Low Level On Resistance
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Turn-Off Fall Time
Low Side Turn-On Propagation Delay
Low Side Turn-Off Propagation Delay
Low Side Turn-On Rise Time
Low Side Turn-Off Fall Time
Delay Matching, High Side and Low Side Turn-On
Delay Matching, High Side and Low Side Turn-Off
Output Pulse Width
B = VS = 600V
CC2 = Vcom = 600V
V
= LIN = 0V
HIN
= LIN = 0V
HIN
= LIN = 0V
HIN
HIN = 5V
HIN = 5V
HIN = 5V
LIN = 5V
LIN = 5V
LIN = 5V
O = 0A, LO, HO
I
O = 0A, LO, HO
I
HIN, LIN
HIN, LIN
INh = VIH–VIL
V
VIN = 5V
IN = 15V
V
IN = 0V
V
O = 0V, VIN = 5V, PW < 10µs
V
O = 15V, VIN = 0V, PW < 10µs
V
O = –20mA, ROH = (VOH–VO)/IO
I
IO = 20mA, ROL = VO/IO
CL = 200pF between HO-VS
CL = 200pF between HO-VS
CL = 200pF between HO-VS
CL = 200pF between HO-VS
CL = 200pF between LO-Vcom
CL = 200pF between LO-Vcom
CL = 200pF between LO-Vcom
CL = 200pF between LO-Vcom
|tdLH(HO)–tdLH(LO)|
dHL(HO)–tdHL(LO)|
|t
IN : PW = 200ns
V
Min. Typ.* Max.
—
—
—
—
—
—
—
—
—
—
—
14.9
—
2.0
0.6
1.0
—
—
—
7.5
0.1
—
7.5
0.1
—
–60
60
—
—
85
100
15
20
85
100
15
20
—
—
200
Limits
—
—
0.18
0.30
0.18
0.25
0.37
0.18
0.18
0.37
0.25
—
—
3.0
1.5
1.5
25
75
—
8.6
0.4
7.5
8.6
0.4
7.5
–100
100
35
50
110
130
30
45
110
130
30
45
—
—
220
1.0
1.0
0.4
0.6
0.4
0.5
0.75
0.4
0.4
0.75
0.5
—
0.1
4.0
2.5
2.0
75
150
1.0
9.7
0.7
—
9.7
0.7
—
–140
140
70
100
135
160
70
90
135
160
70
90
15
15
240
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
µA
µA
µA
V
V
µs
V
V
µs
mA
mA
Ω
Ω
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Mar. 2006
MITSUBISHI SEMICONDUCTORS <HVIC>
HIGH VOLTAGE HALF BRIDGE DRIVER
FUNCTION TABLE (X: H or L)
HIN Behavioral state
L
L
H
H
X
X
L
H
Note : “L” state of VBS UV, VCC2com UV means that UV trip voltage.
In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “H”.
TIMING DIAGRAM
1.Input/Output Timing Diagram
HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.)
In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “H”.
LIN VBS UV
L
H
L
H
L
H
X
X
H
H
H
H
L
L
H
H
V
CC2com
UV
HO LO
LO = HO = Low
H
H
H
H
H
H
L
L
L
L
H
H
L
L
L
H
L
LO = High
H
HO = High
L
LO = HO = High
H
HO = Low, VBS UV tripped
L
H
LO = High, VBS UV tripped
L
LO = Low, V
L
HO = High, VCC2com UV tripped
CC2com UV tripped
M81707FP
HIN
LIN
HO
LO
2.VCC2com (VBS) Supply Under Voltage Lockout Timing Diagram
When Supply Voltage keeps lower UV Trip Voltage(✽✽✽
uvt = ✽✽✽uvr–✽✽✽uvh) for Supply UV Filter Time, output signal
becomes “L”. And then, when Supply Voltage is higher than UV Reset Voltage, output becomes normal.
VCC2com (VBS)
LO
(HO)
CC2comuvt (VBSuvt)
V
tVCC2comuv (tVBSuv)
VCC2comuvh (VBSuvh)
V
CC2comuvr (VBSuvr)
LIN
(HIN)
Mar. 2006
3.Allowable Supply Voltage Transient
It is recommended that supplying V
shutting off supply voltage, shutting off V
last, shutting off V
At the time of starting V
CC Supply Voltage.
CC2com and VBS, power supply should be increased slowly. If it is increased rapidly, output signal
(HO or LO) may be “H”.
PACKAGE OUTLINE
MITSUBISHI SEMICONDUCTORS <HVIC>
M81707FP
HIGH VOLTAGE HALF BRIDGE DRIVER
CC firstly and supplying VCC2com secondly and supplying VBS at last. In the case of
BS Supply Voltage firstly. Secondly, shutting off VCC2com Supply Voltage. And
16P2N-A
EIAJ Package Code
SOP16-P-300-1.27
E
H
G
JEDEC Code
–
16
E
D
e
z
Z
1
Detail G
Weigh t(g)
0.2
9
81
b
y
F
x
M
Lead Material
Cu Alloy
A
1
L
A
2
Detail F
e
b
2
2
1
e
Recommended Mount Pad
Dimension in Millimeters
Symbol
A
1
L
c
Min Nom Max
–
A
A
1
0
2
–
A
.350
b
.180
c
D
.010
E
.25
e
–
.57
H
E
.40
L
–
1
L
z
–
1
–Z
x
–
y
–
0° –8°
b
2
–.760–
e
1
–
I
2
.271
0.605
I
–
.12
.20
.10
–
.81
.50
.40
.250
.20
.210
.110
.45
.35
–
.271
.18
.87
.80
.60
–
.251
–
–
0.755
–
0.25
.10
–
–
.627
–
–
Plastic 16pin 300mil SOP
Mar. 2006
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