Mitsubishi M68761 Datasheet
MITSUBISHI RF POWER MODULE
Nov. ´97
56421
3
12345
ρin
ηT
°C
°C
6
M68761
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO
OUTLINE DRAWING
9.6
H15
14.7
2-R1.5
19.7
27.4
32.4
Dimensions in mm
42
37
30
BLOCK DIAGRAM
PIN:
Pin : RF INPUT
VDD1: 1st DRAIN BIAS SUPPLY
VGG : GATE BIAS SUPPLY
VDD2: 2nd DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
-30 to +100TC (OP) Operation case temperature
-40 to +100Tstg Storage temperature
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Test conditions
f
PO
2fO 2nd. harmonic
Note. Above parameters, ratings, limits and test conditions are subject to change.
Frequency range
Output power
Input VSWR
Total efficiency
Stability
Load VSWR tolerance
VDD=12.5V, VGG=3.5V, Pin=1mW,
ZG=ZL=50Ω
PO=6W(VGG=Adjust), VDD=12.5V,
Pin=1mW(CW), ZG=ZL=50Ω
ZG=ZL=50Ω, VDD=10-16V,
Load VSWR <4:1
VDD=15.2V, Pin=1mW,
PO=6W (VGG Adjust), ZL=20:1
No parasitic oscillation
No degradation or
destroy
Limits
Min Max
820 851
6
-30
4
33
V17VDD Supply voltage
V4VGG Gate bias voltage
mW10Pin Input power
W10PO Output power
Unit
MHz
W
dBc
%
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO
Nov. ´97
ρin
ηT
ηT
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
10
9
8
7
6
5
VDD1=12.5V
VDD2=12.5V
4
VGG=3.4V
3
Pin=1mW
ZG=ZL=50 Ω
2
1
0
800 810 830 870
820 840 860
FREQUENCY f (MHz)
850
ηT
PO
50
40
30
20
10
0
MITSUBISHI RF POWER MODULE
OUTPUT POWER, TOTAL EFFICIENCY
100.0
10.0
0.1
0.01
VS. INPUT POWER
f=820MHz
VDD1=12.5V
VDD2=12.5V
VGG=3.5V
ZG=ZL=50Ω
0.10
INPUT POWER Pin (mW)
1.00
M68761
100.0
PO
10.00
10.0
1.01.0
0.1
OUTPUT POWER, TOTAL EFFICIENCY
100.0
10.0
0.1
0.01
OUTPUT POWER, TOTAL EFFICIENCY
10
9
8
7
6
5 50
4
3
2
1
0
2.00 4.003.00 3.50
VS. INPUT POWER
PO
f=851MHz
VDD1=12.5V
VDD2=12.5V
VGG=3.5V
ZG=ZL=50Ω
0.10
INPUT POWER Pin (mW)
VS. GATE SUPPLY VOLTAGE
f=851MHz
VDD1=12.5V
VDD2=12.5V
Pin=1mW
ZG=ZL=50 Ω
2.50
GATE SUPPLY VOLTAGE VGG (V)
2.752.25
1.00
PO
ηT
3.25
3.75
10.00
100.0
10.0
1.01.0
0.1
100
90
80
70
60
40
30
20
10
0
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
10
f=820MHz
9
VDD1=12.5V
VDD2=12.5V
8
Pin=1mW
7
ZG=ZL=50 Ω
6
5 50
4
3
2
1
0
2.00 4.003.00 3.50
OUTPUT POWER, TOTAL EFFICIENCY
14
12
10
8
6
4
2
0
2.50
GATE SUPPLY VOLTAGE VGG (V)
VS. DRAIN SUPPLY VOLTAGE
DRAIN SUPPLY VOLTAGE VDD (V)
2.752.25
ηT
PO
8
106
PO
ηT
3.25
f=820MHz
VGG=3.5V
Pin=1mW
ZG=ZL=50Ω
124 1614
3.75
100
90
80
70
60
40
30
20
10
0
70
60
50
40
30
20
10
0
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