Mitsubishi M68757L Datasheet
MITSUBISHI RF POWER MODULE
Nov. ´97
12345
ηT
ρin
°C
°C
45213
0.45
12345
M68757L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO
OUTLINE DRAWING
OUTLINE DRAWING
6±1
13.7±1
18.8±1
23.9±1
H46
30±0.2
26.6±0.2
21.2±0.2
2-R1.5±0.1
Dimensions in mm
BLOCK DIAGRAM
PIN:
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
VGG≤3.5V, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
Note. Above parameters are guaranteed independently.
-30 to +100TC (OP) Operation case temperature
-40 to +100Tstg Storage temperature
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Test conditions
f
PO
2fO
Note. Above parameters, ratings, limits and test conditions are subject to change.
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Stability
Load VSWR tolerance
VDD=7.2V, VGG=3.5V, Pin=50mW
ZG=ZL=50Ω, VDD=5-9.2V,
Load VSWR <4:1
VDD=9V, Pin=50mW,
PO=3W (VGG Adjust), ZL=20:1
No parasitic oscillation
No degradation or
destroy
Limits
Min Max
806 870
3
30
-28
4
V9.2VDD Supply voltage
V4VGG Gate bias voltage
mW70Pin Input power
W5PO Output power
Unit
MHz
W
%
dBc
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO
Nov. ´97
ρin
ηT
ηT
ηT
ηT
ηT
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
7
70
MITSUBISHI RF POWER MODULE
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
M68757L
100.0
6
5
4
3
2
VDD=7.2V
VGG=3.5V
1
Pin=50mW
ZG=ZL=50 Ω
0
800 810 830 870 880
OUTPUT POWER, TOTAL EFFICIENCY
100.0
10.0
PO
ηT
820 840 860
FREQUENCY f (MHz)
VS. INPUT POWER
850
PO
60
50
40
30
20
10
0
100.0
10.0
10.0
f=806MHz
VDD=7.2V
VGG=3.5V
ZG=ZL=50Ω
0.1
1
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
6
5
4
3
10
PO
PO
100
10.0
1.01.0
0.1
50
40
30
20
f=870MHz
VDD=7.2V
VGG=3.5V
ZG=ZL=50Ω
0.1
1
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
6
5
4
3
2
1
0
1.5
GATE SUPPLY VOLTAGE VGG (V)
10
PO
f=870MHz
VDD=7.2V
Pin=50mW
ZG=ZL=50 Ω
2.0 3.01.0 4.0
2.5 3.5
100
1.01.0
0.1
50
40
30
20
10
0
2
f=806MHz
1
0
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
14
12
10
8
6
4
2
0
4.5 6.5
DRAIN SUPPLY VOLTAGE VDD (V)
2.0 3.01.0 4.0
1.5
VS. DRAIN SUPPLY VOLTAGE
PO
7.5
VDD=7.2V
Pin=50mW
ZG=ZL=50 Ω
2.5 3.5
f=806MHz
VGG=3.5V
Pin=50mW
ZG=ZL=50Ω
8.5 10.53.5 12.511.5
9.55.5
10
0
70
60
50
40
30
20
10
0
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