Mitsubishi M68757H Datasheet
MITSUBISHI RF POWER MODULE
Nov. ´97
12345
ηT
ρin
°C
°C
45213
0.45
12345
M68757H
SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO
OUTLINE DRAWING
6±1
13.7±1
18.8±1
23.9±1
H46
30±0.2
26.6±0.2
21.2±0.2
2-R1.5±0.1
Dimensions in mm
BLOCK DIAGRAM
PIN:
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
VGG≤3.5V, ZG=ZL=50Ω
f=896-941MHz, ZG=ZL=50Ω
f=896-941MHz, ZG=ZL=50Ω
f=896-941MHz, ZG=ZL=50Ω
-30 to +100TC (OP) Operation case temperature
-40 to +100Tstg Storage temperature
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Test conditions
f
PO
2fO
Frequency range
Output power
Total efficiency
2nd. harmonic
-
VDD=7.2V, VGG=3.5V, Pin=50mW
Input VSWR
Stability
Load VSWR tolerance
Note. Above parameters, ratings, limits and test conditions are subject to change.
ZG=ZL=50Ω, VDD=5-9.2V,
Load VSWR <4:1
VDD=9V, Pin=50mW,
PO=3W (VGG Adjust), ZL=20:1
No parasitic oscillation
No degradation or
destroy
Limits
Min Max
896 941
3
30
-28
4
V9.2VDD Supply voltage
V4VGG Gate bias voltage
mW70Pin Input power
W5PO Output power
Unit
MHz
W
%
dBc
SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO
Nov. ´97
ηT
Ω
ηT
ηT
ηT
ηT
ηT
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY
6
60
MITSUBISHI RF POWER MODULE
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
M68757H
100.0
5
4
3
2
VDD=7.2V
VGG=3.5V
1
Pin=50mW
ZG=ZL=50
0
880 890 900 940
OUTPUT POWER, TOTAL EFFICIENCY
100.0
10.0
0.1
1
PO
ρin
920910 950930
FREQUENCY f (MHz)
VS. INPUT POWER
PO
f=941MHz
VDD=7.2V
VGG=3.5V
ZG=ZL=50Ω
10
INPUT POWER Pin (mW)
100
50
40
30
20
10
0
100.0
10.0
1.01.0
0.1
10.0
0.1
1
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
5.5
5.0 50
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0 3.01.5 4.0
GATE SUPPLY VOLTAGE VGG (V)
10
PO
2.5 3.5
PO
f=896MHz
VDD=7.2V
VGG=3.5V
ZG=ZL=50Ω
100
f=896MHz
VDD=7.2V
VGG=3.5V
ZG=ZL=50 Ω
10.0
1.01.0
0.1
55
45
40
35
30
25
20
15
10
5
0
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
5.5
5.0 50
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0 3.01.5 4.0
GATE SUPPLY VOLTAGE VGG (V)
PO
f=941MHz
VDD=7.2V
VGG=3.5V
ZG=ZL=50 Ω
2.5 3.5
55
45
40
35
30
25
20
15
10
5
0
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
10
9
8
7
6
5
4
3
2
1
0
3 5
DRAIN SUPPLY VOLTAGE VDD (V)
7 9 112 12
6
PO
f=896MHz
VGG=3.5V
Pin=50mW
ZG=ZL=50Ω
84
10
50
45
40
35
30
25
20
15
10
5
0
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