Mitsubishi M68745L Datasheet
MITSUBISHI RF POWER MODULE
Nov. ´97
45321
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ρin
ηT
°C
°C
M68745L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
OUTLINE DRAWING
2-R1.5
1.5 1.5
6.4 32.2
H50
Dimensions in mm
45
42
5
18 5 8.5
(36.5)
35
BLOCK DIAGRAM
PIN:
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
-30 to +100TC (OP) Operation case temperature
-40 to +100Tstg Storage temperature
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Test conditions
f
PO
2fO
Note. Above parameters, ratings, limits and test conditions are subject to change.
Frequency range
Output power
2nd. harmonic
Input VSWR
Total efficiency 30
Stability
Load VSWR tolerance
VDD=7.2V, VGG=5V, Pin=1mW,
ZG=ZL=50Ω
PO=3.8W(VGG=Adjust), VDD=7.2V,
Pin=1mW, ZG=ZL=50Ω
ZG=ZL=50Ω, VDD=5-9.3V,
Load VSWR <4:1
VDD=9V, Pin=1mW,
PO=3.8W (VGG Adjust), ZL=20:1
No parasitic oscillation
No degradation or
destroy
Limits
Min Max
806 870
3.8
-30
4
V9VDD Supply voltage
V5.5VGG Gate bias voltage
mW6Pin Input power
W6PO Output power
Unit
MHz
W
dBc
%
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
Nov. ´97
ρin
ηT
ηT
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
6
5
4
3
ηT
PO
60
50
40
30
MITSUBISHI RF POWER MODULE
OUTPUT POWER, TOTAL EFFICIENCY
10.00
1.00
VS. INPUT POWER
f=806MHz
VDD=7.2V
VGG=5V
ZG=ZL=50Ω
PO
M68745L
100
10
2
VDD=7.2V
VGG=5V
1
Pin=1mW
ZG=ZL=50 Ω
0
760 780 800 820 840 880 900
FREQUENCY f (MHz)
OUTPUT POWER, TOTAL EFFICIENCY
10.00
1.00
0.01
-30 0
VS. INPUT POWER
f=870MHz
VDD=7.2V
VGG=5V
ZG=ZL=50Ω
-20 -15 -10 -5
INPUT POWER Pin (dBm)
860
PO
ηT
ηT
10.10
0
105-25
50
45
40
35
30
25
20
15
10
5
0
20
10
0
100
10
10.10
0
105-25
0.01
-30 0
OUTPUT POWER, TOTAL EFFICIENCY
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-20 -15 -10 -5
INPUT POWER Pin (dBm)
VS. GATE VOLTAGE
f=806MHz
VDD=7.2V
Pin=1mW
ZG=ZL=50 Ω
3.0 4.02.5 5.0
3.5 4.5
GATE VOLTAGE VGG (V)
PO
OUTPUT POWER, TOTAL EFFICIENCY
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VS. GATE VOLTAGE
ηT
PO
f=870MHz
VDD=7.2V
Pin=1mW
ZG=ZL=50 Ω
3.0 4.02.5 5.0
3.5 4.5
GATE VOLTAGE VGG (V)
50
45
40
35
30
25
20
15
10
5
0
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
14
f=806MHz
VGG=5V
Pin=1mW
ZG=ZL=50Ω
10
8
6
4
2
0
DRAIN SUPPLY VOLTAGE VDD (V)
7 9 114 12
6
85
10
PO
70
6012
50
40
30
20
10
0
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