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MITSUBISHI RF POWER MODULE
M68742
SILICON MOS FET POWER AMPLIFIER, 903-905MHz, 1.8W, FM PORTABLE RADIO
OUTLINE DRAWING
6±1
9.6±1
14.7±1
2-R1.5
27.4±1
32.4±1
42±0.5
37
30
φ0.45
±0.15
+0.2
- 0.5
+0.8
0
Dimensions in mm
BLOCK DIAGRAM
PIN:
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
ZG=ZL=50Ω
f=903-905MHz, ZG=ZL=50Ω
f=903-905MHz, ZG=ZL=50Ω
f=903-905MHz, ZG=ZL=50Ω
-30 to +100TC (OP) Operation case temperature
-40 to +100Tstg Storage temperature
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Test conditions
f
PO
2fO
Note. Above parameters, ratings, limits and test conditions are subject to change.
Frequency range
Output power
2nd. harmonic
Input VSWR
Total efficiency
- Stability
Load VSWR tolerance
-
VDD=6V, VGG=5V, Pin=1mW,
ZG=ZL=50Ω
PO=1.8W(VGG=Adjust), VDD=6V,
Pin=1mW, ZG=ZL=50Ω
ZG=ZL=50Ω, VDD=4.5-9.3V,
Load VSWR <4:1
VDD=13V, Pin=1mW,
PO=1.8W (VGG Adjust), ZL=20:1
No parasitic oscillation
No degradation or
destroy
Limits
Min Max
903 905 MHz
1.8
-30
4
30
V13VDD Supply voltage
V5.5VGG Gate bias voltage
mW10Pin Input power
W5PO Output power
Unit
W
dBc
-
%
-
-