Mitsubishi M68742 Datasheet

MITSUBISHI RF POWER MODULE
Nov. ´97
45321
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ρin
ηT
°C
°C
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M68742
SILICON MOS FET POWER AMPLIFIER, 903-905MHz, 1.8W, FM PORTABLE RADIO
6±1
9.6±1
14.7±1
2-R1.5
27.4±1
32.4±1
42±0.5
37
30
φ0.45
±0.15
+0.2
- 0.5 +0.8
0
Dimensions in mm
BLOCK DIAGRAM
PIN:
Pin : RF INPUT VGG : GATE BIAS SUPPLY VDD : DRAIN BIAS SUPPLY PO : RF OUTPUT GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
ZG=ZL=50
f=903-905MHz, ZG=ZL=50 f=903-905MHz, ZG=ZL=50 f=903-905MHz, ZG=ZL=50
-30 to +100TC (OP) Operation case temperature
-40 to +100Tstg Storage temperature
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50 unless otherwise noted)
Symbol Parameter Test conditions
f PO 2fO
Note. Above parameters, ratings, limits and test conditions are subject to change.
Frequency range Output power 2nd. harmonic Input VSWR
Total efficiency
- Stability
Load VSWR tolerance
-
VDD=6V, VGG=5V, Pin=1mW, ZG=ZL=50
PO=1.8W(VGG=Adjust), VDD=6V, Pin=1mW, ZG=ZL=50
ZG=ZL=50, VDD=4.5-9.3V, Load VSWR <4:1
VDD=13V, Pin=1mW, PO=1.8W (VGG Adjust), ZL=20:1
No parasitic oscillation No degradation or
destroy
Limits Min Max 903 905 MHz
1.8
-30 4
30
V13VDD Supply voltage V5.5VGG Gate bias voltage
mW10Pin Input power
W5PO Output power
Unit
W
dBc
-
%
-
-
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