MITSUBISHI RF POWER MODULE
M68741
SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO
OUTLINE DRAWING
2-R1.5
1.5
6.4 32.2
H50
Dimensions in mm
45
42
5
18 5 8.5
(36.5)
35
1.5
BLOCK DIAGRAM
PIN:
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
ZG=ZL=50Ω
f=889-915MHz, ZG=ZL=50Ω
f=889-915MHz, ZG=ZL=50Ω
f=889-915MHz, ZG=ZL=50Ω
-30 to +100TC (OP) Operation case temperature
-40 to +100Tstg Storage temperature
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Test conditions
f
PO
Note. Above parameters, ratings, limits and test conditions are subject to change.
Frequency range
Output power
2nd. harmonic
Input VSWR
Total efficiency 30
Stability
-
Load VSWR tolerance
-
VDD=7.2V, VGG=5V, Pin=1mW,
ZG=ZL=50Ω
PO=3.8W(VGG=Adjust), VDD=7.2V,
Pin=1mW, ZG=ZL=50Ω
ZG=ZL=50Ω, VDD=5-7.2V,
Load VSWR <4:1
VDD=9V, Pin=1mW,
PO=3.8W (VGG Adjust), ZL=20:1
No parasitic oscillation
No degradation or
destroy
Limits
Min Max
889 915
-3.8
-302fO
4 -
V9VDD Supply voltage
V5.5VGG Gate bias voltage
mW6Pin Input power
W6PO Output power
Unit
MHz
W
dBc
%
-
-
SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
10
VDD=7.2V
9
VGG=5V, Pin=1mW
8
7
6
5
4
3
2
1
0
870860 880 890 900 910 920 930 940
FREQUENCY f (MHz)
PO
ηT
ρin
100
90
80
70
60
50
40
30
20
10
0
MITSUBISHI RF POWER MODULE
OUTPUT POWER, TOTAL EFFICIENCY
10.0
1.0
0.1
-30 0
VS. INPUT POWER
f=889MHz
VDD=7.2V
VGG=5V
-25 -20 -15 -10 -5
INPUT POWER Pin (dBm)
M68741
100
PO
10
1
5 10
OUTPUT POWER, TOTAL EFFICIENCY
10.0
1.0
0.1
-30 0
OUTPUT POWER, TOTAL EFFICIENCY
6
5
4
3
2
1
0
VS. INPUT POWER
f=915MHz
VDD=7.2V
VGG=5V
-25 -20 -15 -10 -5
INPUT POWER Pin (dBm)
VS. GATE SUPPLY VOLTAGE
f=915MHz
VDD=7.2V
Pin=1mW
2.5 3.0 4.02.0 5.0
GATE SUPPLY VOLTAGE VGG (V)
3.5 4.5
PO
5 10
PO
ηT
100
10
1
60
50
40
30
20
10
0
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
6
f=889MHz
VDD=7.2V
5
Pin=1mW
4
3
2
1
0
2.5 3.0 4.02.0 5.0
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
10
f=889MHz
9
VGG=5V Pin=1mW
8
7
6
5
4
3
2
1
0
6.0 7.0 9.05.0 10.0
DRAIN SUPPLY VOLTAGE VDD (V)
3.5 4.5
PO
6.5 7.55.5 8.5
8.0 9.5
PO
ηT
60
50
40
30
20
10
0
50
45
40
35
30
25
20
15
10
5
0