Mitsubishi M68739M Datasheet

MITSUBISHI RF POWER MODULE

Nov. ´97

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45213

M68739M

SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO

OUTLINE DRAWING

6±1

13.7±1

18.8±1

26.6±0.2

21.2±0.2

23.9±1

30±0.2

Dimensions in mm

2-R1.5±0.1

BLOCK DIAGRAM

PIN:

Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN

ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)

Symbol Parameter Conditions Ratings Unit

VGG≤2.5V, ZG=ZL=50Ω

f=155-168MHz, ZG=ZL=50Ω
f=155-168MHz, ZG=ZL=50Ω
f=155-168MHz, ZG=ZL=50Ω

-30 to +100TC (OP) Operation case temperature

-40 to +110Tstg Storage temperature

Note. Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)

Symbol Parameter Test conditions

f
PO

2fO

Frequency range
Output power
Total efficiency
2nd. harmonic

VDD=9.6V, VGG=2.5V, Pin=20mW

Input VSWR

- Stability

- Load VSWR tolerance

Note. Above parameters, ratings, limits and test conditions are subject to change.

ZG=50Ω, VDD=4.8-13.2V,
Load VSWR <4:1

VDD=13.2V, Pin=20mW,
PO=7W (VGG Adjust), ZL=20:1

No parasitic oscillation
No degradation or

destroy

Limits
Min Max
155 168

7

50

-20
4

V16VDD Supply voltage
V3VGG Gate bias voltage

mW30Pin Input power

W10PO Output power

Unit

MHz

W
%

dBc

-

-

-