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MITSUBISHI RF POWER MODULE
M68732UH
SILICON MOS FET POWER AMPLIFIER, 470-490MHz, 7W, FM PORTABLE RADIO
OUTLINE DRAWING
6±1
13.7±1
18.8±1
23.9±1
H46
30±0.2
26.6±0.2
21.2±0.2
2-R1.5±0.1
Dimensions in mm
BLOCK DIAGRAM
PIN:
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
VGG≤3.5V, ZG=ZL=50Ω
f=470-490MHz, ZG=ZL=50Ω
f=470-490MHz, ZG=ZL=50Ω
f=470-490MHz, ZG=ZL=50Ω
-30 to +100TC (OP) Operation case temperature
-40 to +110Tstg Storage temperature
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Test conditions
f
PO
2fO
Note. Above parameters, ratings, limits and test conditions are subject to change.
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
-
Stability
-
Load VSWR tolerance
VDD=7.2V,
VGG=3.5V,
Pin=50mW
ZG=50Ω, VDD=4-9.2V,
Load VSWR<4:1
VDD=9.2V, Pin=50mW,
PO=7W (VGG adjust), ZL=20:1
No parasitic oscillation
No degradation or
destroy
Limits
Min Max
470 490
7
40
-25
4
V9.2VDD Supply voltage
V4VGG Gate bias voltage
mW70Pin Input power
W10PO Output power
Unit
MHz
W
%
dBc
-
-
-