MITSUBISHI M63832GP, M63832KP Technical data
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63832GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
DESCRIPTION
The M63832GP/KP 7-channel sinkdriver, consists of 7 PNP
and 14 NPN transistors connected to from seven high current
gain driver pairs.
FEATURES
●
High breakdown voltage (BVCEO ≥ 50V)
●
High-current driving (IC(max) = 500mA)
●
3V micro computer compatible input
●
“L” active level input
●
With input diode
●
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
FUNCTION
The M63832GP/KP is transistor-array of high active level
seven units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5kΩ is connected between
the input and the base of PNP transistors. The input diode is
intended to prevent the flow of current from the input to the
Vcc. Without this diode, the current flows from “H” input to
the Vcc and the “L” input circuit is activated, in such a case
where one of the inputs of the 7 circuit is “H” and the other
are “L” to save power consumption. The diode is inserted to
prevent such mis-operation. The outputs are capable of driving 500mA and are rated for operation with output voltage up
to 50V.
PIN CONFIGURATION
INPUT
1
IN1
2
IN2
3
IN3
4
IN4
5
IN5
6
IN6
7
IN7
8
GND V
16
O1
15
O2
14
O3
13
O4
12
O5
11
O6
10
O7
9
16P2S-A(GP)
Package type
16P2Z-A(KP)
CIRCUIT DIAGRAM
20K
INPUT
3.5K
The seven circuits share the Vcc and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
1.05K
7.2K 3K
CC
OUTPUT
Unit : Ω
V
CC
OUTPUT
GND
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCC
VCEO
IC
VI
Pd
Topr
Tstg
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 2 5 °C, when mounted on board
RatingsSymbol Parameter Conditions Unit
7
–0.5 ~ +50
500
CC
–0.5 ~ V
0.80(FP)/0.78(KP)
–40 ~ +85
–55 ~ +125
V
V
mA
V
W
°C
°C
Sep. 2001
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCC Supply voltage
Collector current (Current per
C
I
1 circuit when 7 circuits are
coming on simultaneously)
VIH
VIL
“H” input voltage
“L” input voltage
Parameter
Duty Cycle
GP/KP : no more than 2%
Duty Cycle
GP/KP : no more than 10%
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE(sat)
V
II
ICC
hFE
✽ : Typical values are at Ta = 25°C
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Supply current (AN only Input)
DC amplification factor
CEO = 100µA
I
V
CC = 2.7V, VI = 0.5V, IC = 400mA
CC = 2.7V, VI = 0.5V, IC = 200mA
V
V
I = VCC-2.2V
CC = 3.6V, VI = 0.5V
V
V
CC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25°C
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
M63832GP/KP
Limits
min typ max
2.7
V
CC-0.5
min typ max
50
—
—
—
—
2000
3.0
0
—
0
—
—
—
0
VCC-2.2
Limits
✽
—
1.15
0.93
–220
2.6
10000
400
200
VCC
—
2.4
1.6
–600
4.0
—
3.6
Unit
V
mA
V
V
V
V
µA
mA
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
on
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT
PG
50Ω
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
V
I
= 0.5 ~ 2.7V
(2)Input-output conditions : R
(3)Electrostatic capacity C
at connections and input capacitance at probes
V
CC
Measured
device
L
= 30Ω, Vo = 10V, Vcc = 2.7V
L
includes floating capacitance
CL = 15pF (note 1)
V
O
R
L
OUTPUT
C
L
TIMING DIAGRAM
min typ max
—
—
INPUT
50% 50%
OUTPUT
50% 50%
ton toff
Limits
120
4500
—
—
ns
ns
Sep. 2001
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