MITSUBISHI M63824GP, M63824KP Technical data

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
COM
GND
1.05K
3K
7.2K
OUTPUT
INPUT
Unit :
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and cannot be used.
M63824GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63824GP/KP 7-channel sinkdriver , consists of 14 NPN transistors connected to from seven high current gain driver pairs.
FEATURES
High breakdown voltage (BVCEO 50V)
High-current driving (IC(max) = 500mA)
With clamping diodes
3V micro computer series compatible input
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver.
FUNCTION
The M63824GP/KP is transistor-array of high active level seven units type which can do direct drive of 3 voltage micro­computer series. A resistor of 1.05k is connected between the input pin. A clamp diode for inductive load transient sup­pression is connected for the output pin (collector) and COM pin (pin9). All emitters of the output transistor are connected to GND (pin8). The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V.
PIN CONFIGURATION
1
IN1
2
IN2
3
IN3
INPUT
IN4 IN5 IN6 IN7 GND
4
5
6
7
8
16P2S-A(GP) 16P2Z-A(KP)Package type
CIRCUIT DIAGRAM
16
O1
15
O2
14
O3
13
O4
12
O5
11
O6
10
O7
9
COM COMMON
OUTPUT
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCEO IC VI IF VR Pd Topr Tstg
Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature
Output, H Current per circuit output, L
Ta = 25°C, when mounted on board
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +50
500
–0.5 ~ +10
500
50
0.80(GP)/0.6(KP) –40 ~ +85
–55 ~ +125
V
mA
V
mA
V
W
°C °C
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VO Output voltage
Collector current (Current per
C
I
1 circuit when 7 circuits are coming on simultaneously)
VIH
VIL
H input voltageL input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE(sat)
V
II VF IR hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current Clamping diode forward volltage Clamping diode reverse current DC amplification factor
Parameter
Duty Cycle GP : no more than 4% KP : no more than 3%
Duty Cycle GP : no more than 15% KP : no more than 12%
C ≤ 400mA
I
I
CEO = 100µA
I
I = 500µA, IC = 350mA I = 350µA, IC = 200mA
I I
I = 250µA, IC = 100mA
I = 3V
V I
F = 350mA
R = 50V
V
CE = 2V, IC = 350mA
V
Conditions
M63824GP/KP
Limits
min typ max
0
0
0
2.4
— —
0
Limits
min typ max
50
— — — — — — —
1000
1.2
1.0
0.9
1.5
1.4
2500
400
200
0.4
1.6
1.3
1.1
2.4
2.0
100
50
10
Unit
V
mA
V V
V
V
mA
V
µA
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
on
toff
NOTE 1 TEST CIRCUIT
Turn-on time Turn-off time
INPUT
Measured device
PG
50
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50
I
= 0 ~ 3V
V (2)Input-output conditions : R (3)Electrostatic capacity C
at connections and input capacitance at probes
OPEN
L
= 25, Vo = 10V
L
includes floating capacitance
CL = 15pF (note 1)
V
O
R
L
OUTPUT
L
C
TIMING DIAGRAM
min typ max
50% 50%
INPUT
OUTPUT
50% 50%
ton toff
Limits
— —
15
350
— —
ns ns
Feb.2003
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