MITSUBISHI M63824GP, M63824KP Technical data

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

COM

GND

1.05K

3K

7.2K

OUTPUT

INPUT

Unit : Ω

The seven circuits share the COM and GND

The diode, indicated with the dotted line, is parasitic, and
cannot be used.

M63824GP/KP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

DESCRIPTION

The M63824GP/KP 7-channel sinkdriver , consists of 14 NPN
transistors connected to from seven high current gain driver
pairs.

FEATURES

●

High breakdown voltage (BVCEO ≥ 50V)

●

High-current driving (IC(max) = 500mA)

●

With clamping diodes

●

3V micro computer series compatible input

●

Wide operating temperature range (Ta = –40 to +85°C)

APPLICATION

Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.

FUNCTION

The M63824GP/KP is transistor-array of high active level
seven units type which can do direct drive of 3 voltage micro­computer series. A resistor of 1.05kΩ is connected between
the input pin. A clamp diode for inductive load transient sup­pression is connected for the output pin (collector) and COM
pin (pin9). All emitters of the output transistor are connected
to GND (pin8). The outputs are capable of driving 500mA
and are rated for operation with output voltage up to 50V.

PIN CONFIGURATION

1

IN1

2

IN2

3

IN3

INPUT

IN4
IN5
IN6
IN7
GND

4

5

6

7

8

16P2S-A(GP)
16P2Z-A(KP)Package type

CIRCUIT DIAGRAM

16

O1

15

O2

14

O3

13

O4

12

O5

11

O6

10

O7

9

COM COMMON

OUTPUT

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

VCEO
IC
VI
IF
VR
Pd
Topr
Tstg

Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Ta = 25°C, when mounted on board

RatingsSymbol Parameter Conditions Unit

–0.5 ~ +50

500

–0.5 ~ +10

500

50

0.80(GP)/0.6(KP)
–40 ~ +85

–55 ~ +125

V

mA

V

mA

V

W

°C
°C

Feb.2003

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol

VO Output voltage

Collector current (Current per

C

I

1 circuit when 7 circuits are
coming on simultaneously)

VIH

VIL

“H” input voltage
“L” input voltage

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE(sat)

V

II
VF
IR
hFE

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor

Parameter

Duty Cycle
GP : no more than 4%
KP : no more than 3%

Duty Cycle
GP : no more than 15%
KP : no more than 12%

C ≤ 400mA

I

I

CEO = 100µA

I

I = 500µA, IC = 350mA
I = 350µA, IC = 200mA

I
I

I = 250µA, IC = 100mA

I = 3V

V
I

F = 350mA

R = 50V

V

CE = 2V, IC = 350mA

V

Conditions

M63824GP/KP

Limits

min typ max

0

—

0

—

0

—

2.4

—
—

0

Limits

min typ max

50

—
—
—
—
—
—
—

1000

1.2

1.0

0.9

1.5

1.4

—

2500

400

200

0.4

—

1.6

1.3

1.1

2.4

2.0

100

—

50

10

Unit

V

mA

V
V

V

V

mA

V

µA

—

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

t

on

toff

NOTE 1 TEST CIRCUIT

Turn-on time
Turn-off time

INPUT

Measured device

PG

50Ω

(1)Pulse generator (PG) characteristics : PRR=1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω

I

= 0 ~ 3V

V
(2)Input-output conditions : R
(3)Electrostatic capacity C

at connections and input capacitance at probes

OPEN

L

= 25Ω, Vo = 10V

L

includes floating capacitance

CL = 15pF (note 1)

V

O

R

L

OUTPUT

L

C

TIMING DIAGRAM

min typ max

50% 50%

INPUT

OUTPUT

50% 50%

ton toff

Limits

—
—

15

350

—
—

ns
ns

Feb.2003

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63824GP/KP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Thermal Derating Factor Characteristics

1.0

M63824GP

0.8

M63824KP

0.6

0.4

0.2

Power dissipation Pd (W)

0

0 25 50 75 100

Ambient temperature Ta (°C)

Duty Cycle-Collector Characteristics

500

(M63824GP)

400

300

200

•The collector current values

Collector current Ic (mA)

represent the current per circuit.

100

•Repeated frequencyy ≥ 10Hz

•The value the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C

0

0 20 40 60 80 100

85

0.416

0.312

1

2
3

4
6

5
7

Clamping Diode Characteristics

500

400

300

200

100

Forward bias current IF (mA)

Ta=85°C

0

0

0.5

1.0 1.5 2.0

Forward bias voltage VF (V)

Duty Cycle-Collector Characteristics

500

(M63824GP)

400

300

200

Collector current Ic (mA)

•The collector current values

100

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle represents the
value of the simultaneously-operated circuit.

•Ta = 85°C

0

0 20 40 60 80 100

Ta=25°C

Ta=–40°C

1

2
3

4
6

5
7

Duty cycle (%)

Duty Cycle-Collector Characteristics

500

(M63824KP)

400

300

200

Collector current Ic (mA)

•Repeated frequencyy ≥ 10Hz

•The value the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C

0

0 20 40 60 80 100

•The collector current values
represent the current per circuit.

100

Duty cycle (%)

1

2

3
4
5
7

6

Duty cycle (%)

Duty Cycle-Collector Characteristics

500

400

(M63824KP)

•The collector current values
represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value the circle
represents the value
of the simultaneously

-operated circuit.

300

200

100

Collector current Ic (mA)

0

0 20 40 60 80 100

Duty cycle (%)

•Ta = 85°C

1

2
3

5
7

4
6

Feb.2003

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63824GP/KP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Output Saturation Voltage-Collector

100

Current Characteristics

II=500µA II=500µA

80

60

40

20

Collector current Ic (mA)

0

Ta=–40°C

Ta=25°C

Ta=85°C

0.2 0.4 0.6 0.8 1.00

Output saturation voltage V

DC Amplification Factor

Collector Current Characteristics

4

10

VCE=2V VCE=2V

7
5

FE

3
2

3

10

7
5

3

DC amplification factor h

2

Ta=85°C

Ta=–40°C

Ta=25°C

CE(sat) (V)

Output Saturation Voltage-Collector

500

Current Characteristics

400

300

200

Collector current Ic (mA)

100

Ta=85°C

0

0

0.4

0.8 1.2 1.6

Output saturation voltage VCE(sat) (V)

Grounded Emitter Transfer Characteristics

500

400

300

200

100

Collector current Ic (mA)

Ta=85°C
Ta=25°C

Ta=–40°C

Ta=25°C

Ta=–40°C

2

10

1

3257 10

Collector current I

2

10

C

(mA)

325710

Input Characteristics

4

Ta=25°C

3

Ta=–40°C

2

1

Input current II (mA)

0

01 234 5

Input voltage V

I (V)

Ta=85°C

3

0

0 0.4 0.8 1.2 1.6 2.0

Input voltage V

I (V)

Feb.2003