MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
COM
GND
1.05K
3K
7.2K
OUTPUT
INPUT
Unit : Ω
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
M63824GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63824GP/KP 7-channel sinkdriver , consists of 14 NPN
transistors connected to from seven high current gain driver
pairs.
FEATURES
●
High breakdown voltage (BVCEO ≥ 50V)
●
High-current driving (IC(max) = 500mA)
●
With clamping diodes
●
3V micro computer series compatible input
●
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
FUNCTION
The M63824GP/KP is transistor-array of high active level
seven units type which can do direct drive of 3 voltage microcomputer series. A resistor of 1.05kΩ is connected between
the input pin. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM
pin (pin9). All emitters of the output transistor are connected
to GND (pin8). The outputs are capable of driving 500mA
and are rated for operation with output voltage up to 50V.
PIN CONFIGURATION
1
IN1
2
IN2
3
IN3
INPUT
IN4
IN5
IN6
IN7
GND
4
5
6
7
8
16P2S-A(GP)
16P2Z-A(KP)Package type
CIRCUIT DIAGRAM
16
O1
15
O2
14
O3
13
O4
12
O5
11
O6
10
O7
9
COM COMMON
OUTPUT
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +50
500
–0.5 ~ +10
500
50
0.80(GP)/0.6(KP)
–40 ~ +85
–55 ~ +125
V
mA
V
mA
V
W
°C
°C
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VO Output voltage
Collector current (Current per
C
I
1 circuit when 7 circuits are
coming on simultaneously)
VIH
VIL
“H” input voltage
“L” input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE(sat)
V
II
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
Parameter
Duty Cycle
GP : no more than 4%
KP : no more than 3%
Duty Cycle
GP : no more than 15%
KP : no more than 12%
C ≤ 400mA
I
I
CEO = 100µA
I
I = 500µA, IC = 350mA
I = 350µA, IC = 200mA
I
I
I = 250µA, IC = 100mA
I = 3V
V
I
F = 350mA
R = 50V
V
CE = 2V, IC = 350mA
V
Conditions
M63824GP/KP
Limits
min typ max
0
—
0
—
0
—
2.4
—
—
0
Limits
min typ max
50
—
—
—
—
—
—
—
1000
1.2
1.0
0.9
1.5
1.4
—
2500
400
200
0.4
—
1.6
1.3
1.1
2.4
2.0
100
—
50
10
Unit
V
mA
V
V
V
V
mA
V
µA
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
on
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT
Measured device
PG
50Ω
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
I
= 0 ~ 3V
V
(2)Input-output conditions : R
(3)Electrostatic capacity C
at connections and input capacitance at probes
OPEN
L
= 25Ω, Vo = 10V
L
includes floating capacitance
CL = 15pF (note 1)
V
O
R
L
OUTPUT
L
C
TIMING DIAGRAM
min typ max
50% 50%
INPUT
OUTPUT
50% 50%
ton toff
Limits
—
—
15
350
—
—
ns
ns
Feb.2003