Mitsubishi M5M5W816TP-85HI, M5M5W816TP-70HI Datasheet

2001.4.11 Ver. 2.0

8388608

-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

center of distribution, and not 100% tested.

OE#

(1MHz)

123456789101112131415161718192021

22

32313029282726252423363534

334140393837444342

A5A6A

A

MITSUBISHI LSIs

MITSUBISHI LSIs

M5M5W816TP-70HI, 85HI

DESCRIPTION

The M5M5W816TP is a family of low voltage 8-Mbit static
RAMs organized as 524288-words by 16-bit, fabricated by
Mitsubishi's high-performance 0.18µm CMOS technology.
The M5M5W816TP is suitable for memory applications
where a simple interfacing , battery operating and battery
backup are the important design objectives.
The M5M5W816TP is packaged in a 44pin thin small
outline mount device, with the outline of 400mil TSOP
TYPE(II). It gives the best solution for a compaction of
mounting area as well as flexibility of wiring pattern of
printed circuit boards.
The operating temperature range is -40~+85°C

Version,

Operating

temperature

I-version

-40~+85°C

Part name

M5M5W816TP -70HI
M5M5W816TP -85HI

Power

Supply

2.7~3.0V

Access time

max.

70ns

85ns

PRELIMINARY

Notice: This is not a final specification.
Some parametric limits are subject to change

Those are summarized in the part name table below.

FEATURES

- Single 2.7~3.0V power supply

- Small stand-by current: 0.2µA (3.0V, typ.)

- No clocks, No refresh

- Data retention supply voltage =2.0V

- All inputs and outputs are TTL compatible.

- Easy memory expansion by S#, BC1# and BC2#

- Common Data I/O

- Three-state outputs: OR-tie capability

- OE# prevents data contention in the I/O bus

- Process technology: 0.18µm CMOS

- Package: 44pin 400mil TSOP TYPE(II)

Active

current

Icc1

*(typ.)

40mA

(10MHz)

5mA

* Typical

1.00.5

Stand-by current

Ratings (max.)

40°C25°C 40°C

70°C 85°C25°C

402042

PIN CONFIGURATION

A4
A3
A2
A1
A0

S#
DQ1
DQ2
DQ3

DQ4

VCC

GND

DQ5

DQ6

DQ7

DQ8

W#

A15
A14

A13
A12
A16

7

OE#
BC2#

BC1#
DQ16
DQ15

DQ14

DQ13

GND

VCC

DQ12
DQ11
DQ10
DQ9

A18

A8

9

A10
A11
A17

44Pin 400mil TSOP

Outline: 44P3W
NC: No Connection

* Typical parameter indicates the value for the

Pin Function

A0 ~ A18

DQ1 ~ DQ16

S#

W#

Address input
Data input / output
Chip select input
Write control input
Output enable input

BC1#

BC2#

Vcc

GND

Lower Byte (DQ1 ~ 8)
Upper Byte (DQ9 ~ 16)
Power supply
Ground supply

MITSUBISHI ELECTRIC

MITSUBISHI ELECTRIC

1

2001.4.11 Ver. 2.0

8388608

-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

CLOCK

GENERATOR

-

S#

W#

Non selection

MITSUBISHI LSIs

MITSUBISHI LSIs

M5M5W816TP-70HI, 85HI

FUNCTION

The M5M5W816TP is organized as 524288-words by 16­bit. These devices operate on a single +2.7~3.0V power
supply, and are directly TTL compatible to both input and
output. Its fully static circuit needs no clocks and no
refresh, and makes it useful.
The operation mode are determined by a combination of
the device control inputs BC1# , BC2# , S# , W# and
OE#. Each mode is summarized in the function table.
A write operation is executed whenever the low level W#
overlaps with the low level BC1# and/or BC2# and the low
level S#. The address(A0~A18) must be set up before the
write cycle and must be stable during the entire cycle.
A read operation is executed by setting W# at a high
level and OE# at a low level while BC1# and/or BC2# and
S# are in an active state(S#=L).
When setting BC1# at the high level and other pins are
in an active stage , upper-byte are in a selectable mode in
which both reading and writing are enabled, and lower-byte
are in a non-selectable mode. And when setting BC2# at a
high level and other pins are in an active stage, lower­byte are in a selectable mode and upper-byte are in a
non-selectable mode.
The operating temperature range is -40 ~ +85°C

When setting BC1# and BC2# at a high level or S# at a high
level, the chips are in a non-selectable mode in which both
reading and writing are disabled. In this mode, the output
stage is in a high-impedance state, allowing OR-tie with other
chips and memory expansion by BC1#, BC2# and S#.
The power supply current is reduced as low as 0.1µA(25°C ,
typical), and the memory data can be held at +2.0V power
supply, enabling battery back-up operation during power
failure or power-down operation in the non-selected mode.

FUNCTION TABLE

H
X

L
L
L
L
L
L
L
L
L

PRELIMINARY

Notice: This is not a final specification.
Some parametric limits are subject to change

BC2#

BC1#

X X
H H X X Standby

HL H Read High-ZDout ActiveL
HL Active

H L L

L H

H L Active

L DinLL X Write Din Active
L DoutHL L
L

OE#

Mode

X X

H H High-Z High-Z

H High-Z

Non selection

XLL H Din

Write

Write
Read

H

Read

H High-Z

DQ1~8 DQ9~16

High-Z
High-Z High-Z

High-Z

High-Z

High-Z ActiveHL

High-Z

High-Z

Din ActiveX

Dout Active

Standby

Active

ActiveL DoutH High-Z

Icc

BLOCK DIAGRAM

A0

A1

A17

A18

S#

BC1#

BC2#

W#

OE#

MEMORY ARRAY

524288 WORDS

x 16 BITS

DQ

1

DQ

8

DQ

9

DQ

16

Vcc

GND

MITSUBISHI ELECTRIC

MITSUBISHI ELECTRIC

2

2001.4.11 Ver. 2.0

8388608

-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

10

f= 10MHz

0 ~ Vcc

f= 10MHz

High-level output voltage

Typ

=<=

>

<

=

10

(1)

>=other inputs = 0 ~ Vcc

<

=

(2)

other inputs = 0 ~ Vcc

>

=

MITSUBISHI LSIs

MITSUBISHI LSIs

M5M5W816TP-70HI, 85HI

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Units

V

cc

VI
VO
Pd

Ta
Tstg

DC ELECTRICAL CHARACTERISTICS

DC ELECTRICAL CHARACTERISTICS

Symbol

VIH
VIL

Supply voltage

Input voltage

Output voltage
Power dissipation
Operating

temperature

Storage temperature

Parameter

High-level input voltage
Low-level input voltage

VOH IOH= - 0.5mA

Low-level output voltage

VOL IOL=2mA

Input leakage current

II

Output leakage current

IO

Active supply current

Icc1

( AC,MOS level )
Active supply current

Icc2

( AC,TTL level )

Conditions
With respect to GND
With respect to GND
With respect to GND

Ta= 25°C

* -3.0V in case of AC (Pulse width 30ns)

Conditions

VI =0 ~ Vcc

BC1# and BC2#=VIH or S#=VIH or OE#=VIH, VI/O=0 ~ Vcc
BC1# and BC2# 0.2V, S# 0.2V

other inputs 0.2V or Vcc-0.2V
Output - open (duty 100%)

BC1# and BC2#=VIL , S#=VIL
other pins =V IH or VIL
Output - open (duty 100%)

<

=

-0.3* ~ Vcc + 0.3 (max. 4.6V)

f= 1MHz

f= 1MHz

PRELIMINARY

Notice: This is not a final specification.
Some parametric limits are subject to change

Ratings

-0.3* ~ +4.6

700

- 40 ~ +85

- 65 ~ +150

Limits

2.2

-0.2 *

2.4

-

-

5

-

-

<

=

MaxTypMin

Vcc+0.2V

0.6

0.4
±1
±1
4030
10
4030
105

V

mW

°C
°C

Units

V

µA

mA

S# Vcc - 0.2V,

Stand by supply current

Icc3

( AC,MOS level )

Stand by supply current

Icc4

( AC,TTL level )

Note 1: Direction for current flowing into IC is indicated as positive (no mark)
Note 2: Typical parameter indicates the value for the center of distribution at 3.0V, and not 100% tested.

CAPACITANCE

CAPACITANCE

Symbol

CI
CO

Parameter

Input capacitance

Output capacitance

BC1# and BC2# Vcc - 0.2V

S# 0.2V

BC1# and BC2#=VIH or S#=VIH

Other inputs= 0 ~ Vcc

Conditions

VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz

MITSUBISHI ELECTRIC

MITSUBISHI ELECTRIC

~ +25°C
~ +40°C

~ +70°C
~ +85°C

* -3.0V in case of AC (Pulse width 30ns)

Min

0.5

-

-

1.0

-

-

-

-

-

-

Limits

Max

2

4
20
40

2

µA

mA

<
=

Units

pF

3

3