Mitsubishi M5M5V4R04J-15, M5M5V4R04J-12 Datasheet

4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM

DESCRIPTION

The M5M5V4R04J is a family of 1048576-word by 4-bit static
RAMs, fabricated with the high performance CMOS silicon gate
process and designed for high speed application.
The M5M5V4R04J is offered in a 32-pin plastic small outline J­lead package(SOJ).
These device operate on a single 3.3V supply, and are directly
TTL compatible. They include a power down feature as well.

FEATURES

• Fast access time M5M5V4R04J-12 •••• 12ns(max)

M5M5V4R04J-15 •••• 15ns(max)

• Low power dissipation Active

Stand by ••••••• 3.3mW(typ)

• Single +3.3V power supply

• Fully static operation : No clocks, No refresh

• Common data I/O

• Easy memory expansion by S

• Three-state outputs : OR-tie capability

• OE prevents data contention in the I/O bus

• Directly TTL compatible : All inputs and outputs

•••••••••• 297mW(typ)

M5M5V4R04J-12,-15

PIN CONFIGURATION (TOP VIEW)

1

A0

2

(0V)

A1

3

A2

4

A3

5

A4

6

S

7

DQ1

8

VCC

9

GND

10

DQ2

11

W

12

A5

13

A6

14

A

7

15

A8

16

9

A

Outline 32P0K(SOJ)

M5M5V4R04J

address

inputs

chip select

input
datainputs/
outputs

(3.3V)

datainputs/
outputs

write control

input

address

inputs

MITSUBISHI LSIs

1997.11.20 Rev.F

32

A19

31

A

18

30
29

28
27

OE

26
25
24
23
22
21
20
19

18
17

A17

16

A

15

A

output enable

input

DQ4

(0V)

GND

(3.3V)

VCC

DQ3
A14
A

13

A12
A11

A10

NC

address

inputs

data inputs/

outputs

datainputs/

outputs

address

inputs

APPLICATION

High-speed memory units

BLOCK DIAGRAM

A0

1

A1

2

A2

3

A3

address

inputs

A4
A

5

12

A6

13

A7

14

A8

15

S

W

11

OE 27

4
5

ROW INPUT BUFFERS

6

MEMORY ARRAY

512 ROWS

8192 COLUMNS

ROW ADDRESS DECODERS

COLUMN I/O CIRCUITS

COLUMN ADDRESS

COLUMN

DECODERS

ADDRESS
DECODERS

COLUMN INPUT BUFFERS

PACKAGE

32pin 400mil SOJ

DQ1

7

DQ2

10

DQ3

23

DQ4

26

OUTPUT BUFFERS

8

VCC

24

DATA INPUT BUFFERS

25

9

GND

data
inputs/
outputs

(3.3V)

(0V)

18 19

address inputs

20 21 221628 29

MITSUBISHI
ELECTRIC

A16A15A14A13A12A11A10A9

31

A1730A18

32

A19

1

4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM

FUNCTION

The operation mode of the M5M5V4R04J is determined by a
combination of the device control inputs S, W and OE. Each
mode is summarized in the function table.
A write cycle is executed whenever the low level W overlaps
with the low level S. The address must be set-up before the
write cycle and must be stable during the entire cycle.
The data is latched into a cell on the trailing edge of W or
S, whichever occurs first, requiring the set-up and hold time
relative to these edge to be maintained. The output enable
input OE directly controls the output stage. Setting the OE at
a high level, the output stage is in a high impedance state,
and the data bus

FUNCTION TABLE

MITSUBISHI LSIs

M5M5V4R04J-12,-15

contention problem in the write cycle is eliminated.
A read cycle is excuted by setting W at a high level and
OE at a low level while S are in an active state (S=L).
When setting S at high level, the chip is in a non­selectable mode in which both reading and writing are
disable. In this mode, the output stage is in a high­impedance state, allowing OR-tie with other chips and
memory expansion by S.
Signal-S controls the power-down feature. When S goes
high, power dissapation is reduced extremely. The access
time from S is equivalent to the address access time.

S

H

W OE

XX

Mode

Non selection Stand by

High-impedance
L Write ActiveDinLX
L Read
L ActiveHigh-impedance

HH

DoutHL

ABSOLUTE MAXIMUM RATINGS

Symbol

V

cc

VI
V

O

Pd
Topr

Tstg(bias)

T

stg

*Pulse width ≤ 20ns, In case of DC:-0.5V

Parameter
Supply voltage
Input voltage
Output voltage
Power dissipation
Operating temperature
Storage temperature
Storage temperature

With respect to GND

Ta=25 C

(bias)

DC ELECTRICAL CHARACTERISTICS

Symbol Parameter

V

IH

High-level input voltage

V

IL

Low-level input voltage

VOH

High-level output voltage

VOL 0.4

Low-level output voltage
Input current

I

I

Output current in off-state

I

OZ

I

I

I

Active supply current

CC1

(TTL level)

Stand by current

CC2

(TTL level)

Stand by current

CC3

I

OH =-4mA
OL= 8mA

I
V

= 0~Vcc

I

VI (S)= VIH
VO= 0~Vcc

I (S)= VIL

V
other inputs VIH or VIL
Output-open(duty 100%)

VI (S)= VIH

VI (S)= Vcc≥0.2V
other inputs V
or V

I≥Vcc-0.2V

DQ

Icc

Active

Ratings

*

-2.0 ~ 4.6

*

-2.0 ~ VCC+0.5

*

-2.0 ~ VCC+0.5

1000
0 ~ 70

-10 ~ 85

-65 ~ 150

(Ta=0 ~ 70 C, Vcc=3.3V unless otherwise noted)

+10%

-5%

Condition

UnitConditions

V
V

V

mW

C
C
C

Limits

Min

2.0

-0.3

2.4

12ns cycle

AC

15ns cycle

DC

90

12ns cycle

AC

15ns cycle

DC

I≤0.2V

1

MaxTyp

Vcc+0.3

0.8

2

10

160
150

100

75
70

50

10

Unit

V
V

V

V

µA
µA

mA

mA

mA

MITSUBISHI
ELECTRIC

2