Mitsubishi M5M5V416BUG-70HI Datasheet

revision-01, 17th July '00

4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

MITSUBISHI LSIs

(TOP VIEW)

DQ3A7DQ1

GND

DQ7A2S1

DQ2

DQ5

DQ6A1A4A6A5

A16

A15A0A3

GND

A14OEBC2

DQ11

DQ13

DQ14

BC1

DQ9

DQ10

VCC

DQ15

DQ8WA13

A12

N.C.

DQ16

N.C.

A11

A10A9A8

N.C.

M5M5V416BUG - 70H I

DESCRIPTION

The M5M5V416B is a family of low voltage 4-Mbit static RAMs organized as 262,144-words by 16-bit, fabricated by Mitsubishi's high-performance 0.25µm CMOS technology. The M5M5V416B is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. M5M5V416BUG is packaged in a CSP (chip scale package), with the outline of 7mm x 8.5mm, ball matrix of 6 x 8 (48pin) and ball pitch of 0.75mm. It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards.

Version, Operating

temperature

I-version

-40 ~ +85°C

Part name

M5M5V416BUG -70HI

Power

Supply

2.7 ~ 3.6V

Access time

max.

70ns

Those are summarized in the part name table below.

FEATURES

Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,typ.) No clocks, No refresh Data retention supply voltage =2.0V to 3.6V All inputs and outputs are TTL compatible. Easy memory expansion by S1, S2, BC1 and BC2 Common Data I/O Three-state outputs: OR-tie capability OE prevents data contention in the I/O bus Process technology: 0.25µm CMOS Package: 48pin 7mm x 8.5mm CSP

Stand-by current Icc (PD), Vcc=3.0V

typical *

Ratings (max.)

70°C 85°C25°C25°C 40°C40°C

0.3µA 1µA 3µA1µA 15µA 30µA

Active

current

Icc1

(3.0V, typ.)

50mA

(10MHz)

7mA

(1MHz)

PIN CONFIGURATION

G H

1 2 3 4 5 6

GND

DQ12

A17

DQ4

Outline: 48FJA NC: No Connection

VCC

* "typical" parameter is sampled, not 100% tested.

Pin Function

A0 ~ A17

DQ1 ~ DQ16

S1 S2

OE BC1 BC2

Vcc

GND

Address input Data input / output Chip select input 1 Chip select input 2 Write control input Output enable input Lower Byte (DQ1 ~ 8)

Upper Byte (DQ9 ~ 16)

Power supply Ground supply

MITSUBISHI ELECTRIC

revision-01, 17th July '00

4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

MITSUBISHI LSIs

CLOCK

GENERATOR

Non selection

M5M5V416BUG - 70H I

FUNCTION

The M5M5V416BWG is organized as 262,144-words by 16-bit. These devices operate on a single +2.7~3.6V power supply, and are directly TTL compatible to both input and output. Its fully static circuit needs no clocks and no refresh, and makes it useful. The operation mode are determined by a combination of the device control inputs BC1 , BC2 , S1, S2 , W and OE. Each mode is summarized in the function table. A write operation is executed whenever the low level W overlaps with the low level BC1 and/or BC2 and the low level S1 and the high level S2. The address(A0~A17) must be set up before the write cycle and must be stable during the entire cycle. A read operation is executed by setting W at a high level and OE at a low level while BC1 and/or BC2 and S1 and S2 are in an active state(S1=L,S2=H). When setting BC1 at the high level and other pins are in an active stage , upper-byte are in a selectable mode in which both reading and writing are enabled, and lower-byte are in a non-selectable mode. And when setting BC2 at a high level and other pins are in an active stage, lowerbyte are in a selectable mode and upper-byte are in a non-selectable mode.

BLOCK DIAGRAM

When setting BC1 and BC2 at a high level or S1 at a high level or S2 at a low level, the chips are in a non-selectable mode in which both reading and writing are disabled. In this mode, the output stage is in a high-impedance state, allowing OR-tie with other chips and memory expansion by BC1, BC2 and S1, S2. The power supply current is reduced as low as 0.3µA(25°C , typical), and the memory data can be held at +2V power supply, enabling battery back-up operation during power failure or power-down operation in the non-selected mode.

FUNCTION TABLE

BC1 BC2

H X X X

L L

L L L

X X High-ZX X L X X High-ZX X X H H X X

H XLL H Din High-Z Active H HL H

H HL Active H H L L

H L H H H L Active

H L DinLL X H L DoutHL L H L

OE DQ1~8 DQ9~16 Icc

H H High-Z High-Z

H High-Z

Mode

High-Z High-Z

High-Z High-Z Write Read

Write Read

H High-Z

High-Z

High-Z ActiveHL

High-ZDout ActiveL

Din ActiveX

Din Active Dout Active

Standby Standby Standby

ActiveL DoutH High-Z

A16

A17

BC1

BC2

MEMORY ARRAY

262144 WORDS

x 16 BITS

Vcc

GND

MITSUBISHI ELECTRIC

revision-01, 17th July '00

4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

MITSUBISHI LSIs

=2mA

f= 10MHz

0 ~ Vcc

f= 10MHz

Typ

<=<=>

Other inputs=0~Vcc

>=>

< 1 >

< 3 >

< 2 >

M5M5V416BUG - 70H I

ABSOLUTE MAXIMUM RATINGS

Symbol

cc VI VO Pd

Parameter

Supply voltage

Input voltage

Output voltage

Power dissipation

Operating temperature

With respect to GND With respect to GND With respect to GND

Ta=25°C

I-version

Conditions

Ratings

-0.5* ~ +4.6

-0.5* ~ Vcc + 0.5

700

- 40 ~ +85

Units

°C

Tstg

Storage temperature

DC ELECTRICAL CHARACTERISTICS

Symbol

VIH VIL VOH1 IOH= -0.5mA VOH2 IOH= -0.05mA VOL IOL

II IO

Icc1

Icc2

Icc3

Parameter

High-level input voltage Low-level input voltage

High-level output voltage 1 High-level output voltage 2

Low-level output voltage Input leakage current Output leakage current

Active supply current ( AC,MOS level )

Active supply current ( AC,TTL level )

Stand by supply current ( AC,MOS level )

VI =0 ~ Vcc

BC1 and BC2=VIH or S1=VIH or S2=VIH or OE=VIH, VI/O=0 ~ Vcc BC1 and BC2 0.2V, S1 0.2V, S2 Vcc-0.2V

other inputs 0.2V or Vcc-0.2V Output - open (duty 100%)

BC1 and BC2=VIL , S=V IL ,S2=VIH other pins =V IH or VIL Output - open (duty 100%)

S1 Vcc - 0.2V, other inputs = 0 ~ Vcc

S2 0.2V, other inputs = 0 ~ Vcc

- 65 ~ +150

* -3.0V in case of AC (Pulse width 30ns)

Conditions

-0.3 *

Vcc-0.5V

f= 1MHz

+85°C +70°C +40°C

0 ~ +25°C

2.2

2.4

°C

< =

Limits

0.3

MaxTypMin

Vcc+0.3V

0.6

0.4 ±1

±1

7050

15 7050 157 40

5.0

2.0

Units

µA

BC1 and BC2 Vcc - 0.2V

S1 0.2V, S2 Vcc - 0.2V

Stand by supply current

Icc4

( AC,TTL level )

Note 1: Direction for current flowing into IC is indicated as positive (no mark) Note 2: Typical value is for Vcc=3.0V and Ta=25°C

BC1 and BC2=VIH or S1=VIH or S2=VIL

Other inputs= 0 ~ Vcc

CAPACITANCE

Symbol

CI CO

Parameter

Input capacitance

Output capacitance

VI=GND, VI=25mVrms, f=1MHz VO=GND,VO=25mVrms, f=1MHz

Conditions

MITSUBISHI ELECTRIC

* -3.0V in case of AC (Pulse width 30ns)

Min

0.3

Limits

2.0

0.5

Max

< =

Units

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