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M5M5V416BTP-85LW
Datasheet
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Mitsubishi M5M5V416BTP-85LW, M5M5V416BTP-85LI, M5M5V416BTP-85L, M5M5V416BTP-85HW, M5M5V416BTP-85HI Datasheet

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revision-P04, ' 98.12.16
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
123
45678
910111213
1415161718
19202122444342
4140393837
3635343332
3130292827
262524
23
A3S1DQ1
Vcc
GNDWEA2A1A0
DQ3
DQ4
DQ6
DQ7
DQ8
A15
A14
A13
A16
BC1OEBC2A5S2A8A9
A10
A11
DQ9
DQ10
DQ11
Vcc
GND
DQ13
DQ14
DQ16A6A7
A17
BC1
OEA4A3
BC2
S1A5DQ1S2Vcc
GND
WEA8A9
A10
A11
123
45678
910111213
1415161718
19202122444342
4140393837
3635343332
3130292827
262524
23
A2A1A0
DQ3
DQ4
DQ6
DQ7
DQ8
A15
A14
A13
A16
DQ9
DQ10
DQ11
Vcc
GND
DQ13
DQ14
DQ16A6A7
A17
M5M5V416BTP , RT -85L
M5M5V416BTP , RT -70L
M5M5V416BTP , RT -10L
M5M5V416BTP , RT -70H
M5M5V416BTP , RT -85H
M5M5V416BTP , RT -10H
M5M5V416BTP , RT -85LW
M5M5V416BTP , RT -70LW
M5M5V416BTP , RT -10LW
M5M5V416BTP , RT -85HW
M5M5V416BTP , RT -70HW
M5M5V416BTP , RT -10HW
M5M5V416BTP , RT -85LI
M5M5V416BTP , RT -70LI
M5M5V416BTP , RT -10LI
M5M5V416BTP , RT -85HI
M5M5V416BTP , RT -70HI
M5M5V416BTP , RT -10HI
-20 ~ +85°C
1
M5M5V416BTP,RT
DESCRIPTION
The M5M5V416B is a family of low voltage 4-Mbit static RAMs organized as 262,144-words by 16-bit, fabricated by Mitsubishi's high-performance 0.25µm CMOS technology. The M5M5V416B is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. M5M5V416BTP,RT are packaged in a 44-pin 400mil thin small outline package. M5M5V416BTP (normal lead bend type package) , M5M5V416BRT (reverse lead bend type package) , both types are very easy to design a printed circuit board. From the point of operating temperature, the family is divided into three versions; "Standard", "W-version", and "I-version". Those are summarized in the part name table below.
Version,
Operating
Part name
temperature
Standard
0 ~ +70°C
W-version
I-version
-40 ~ +85°C
PIN CONFIGURATION
Power
Supply
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
Access time
max.
70ns 85ns
100ns
70ns
85ns
100ns
70ns 85ns
100ns
70ns 85ns
100ns
70ns 85ns
100ns
70ns 85ns
100ns
PRELIMINARY
FEATURES
Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,typ.) No clocks, No refresh Data retention supply voltage=2.0V to 3.6V All inputs and outputs are TTL compatible. Easy memory expansion by S1, S2, BC1 and BC2 Common Data I/O Three-state outputs: OR-tie capability OE prevents data contention in the I/O bus Process technology: 0.25µm CMOS Package: 44 pin 400mil TSOP (II)
Stand-by current Icc (PD), Vcc=3.0V
typical *
Ratings (max.)
70°C 85°C25°C25°C 40°C40°C
---
0.3µA
---
0.3µA
---
0.3µA
---
1µA
---
1µA
---
1µA
1µA
1µA 3µA
1µA 3µA
---
---
3µA
--- ---
--- ---
20µA
10µA
20µA
10µA
20µA
10µA
40µA
20µA
40µA
20µA
* "typical" parameter is sampled, not 100% tested.
A4
Active
current
Icc1
(3.0V, typ.)
---
---
40mA
(10MHz)
5mA
(1MHz)
DQ2
DQ5
A12
DQ15
DQ12
DQ15
DQ12
44P3W-H 44P3W-J
MITSUBISHI ELECTRIC
DQ2
DQ5
A12
Pin
A0 ~ A17
DQ1 ~ DQ16
S1 S2
W
OE BC1 BC2
Vcc
GND
Outline: 44P3W-H/J
NC: No Connection
Function Address input Data input / output Chip select input 1 Chip select input 2 Write control input Output enable input Lower Byte (DQ1 ~ 8)
Upper Byte (DQ9 ~ 16)
Power supply Ground supply
revision-P04, ' 98.12.16
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
CLOCK
GENERATOR
S2
-
S1
Non selection
Non selection
M5M5V416BTP,RT
FUNCTION
The M5M5V416BTP,RT are organized as 262,144-words by 16-bit. These devices operate on a single +2.7~3.6V power supply, and are directly TTL compatible to both input and output. Its fully static circuit needs no clocks and no refresh, and makes it useful. The operation mode are determined by a combination of the device control inputs BC1 , BC2 , S1, S2 , W and OE. Each mode is summarized in the function table. A write operation is executed whenever the low level W overlaps with the low level BC1 and/or BC2 and the low level S1 and the high level S2. The address(A0~A17) must be set up before the write cycle and must be stable during the entire cycle. A read operation is executed by setting W at a high level and OE at a low level while BC1 and/or BC2 and S1 and S2 are in an active state(S1=L,S2=H). When setting BC1 at the high level and other pins are in an active stage , upper-byte are in a selectable mode in which both reading and writing are enabled, and lower-byte are in a non-selectable mode. And when setting BC2 at a high level and other pins are in an active stage, lower­byte are in a selectable mode and upper-byte are in a non-selectable mode.
BLOCK DIAGRAM
PRELIMINARY
When setting BC1 and BC2 at a high level or S1 at a high level or S2 at a low level, the chips are in a non-selectable mode in which both reading and writing are disabled. In this mode, the output stage is in a high-impedance state, allowing OR-tie with other chips and memory expansion by BC1, BC2 and S1, S2. The power supply current is reduced as low as 0.3µA(25°C, typical), and the memory data can be held at +2V power supply, enabling battery back-up operation during power failure or power-down operation in the non-selected mode.
FUNCTION TABLE
S2
S1
BC1 BC2
L X X High-ZX X
H
L X X High-ZX X
L
H X X High-Z
H
X H H X X Standby
X
H XLL H Din High-Z Active
L
H HL H
L
H HL Active
L
H H L L
L
H L H
L
H H L Active
L
H L DinLL X
L
H L DoutHL L
L
H L
L
OE DQ1~8
W
X X
H H High-Z High-Z
H High-Z
Mode
Non selection Non selection
Write Read
Write Read
H
Write Read
H High-Z
High-Z High-Z
High-Z
High-Z
High-Z ActiveHL
DQ9~16 Icc
High-Z High-Z High-Z Standby
High-ZDout ActiveL
Din ActiveX
Din Active Dout Active
Standby Standby
ActiveL DoutH High-Z
A0
A1
A16
A17
BC1
BC2
W
OE
MEMORY ARRAY
262144 WORDS
x 16 BITS
DQ
1
DQ
8
DQ
9
DQ
16
Vcc
GND
MITSUBISHI ELECTRIC
2
revision-P04, ' 98.12.16
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
3
10
=2mA
f= 10MHz
0 ~ Vcc
f= 10MHz
Typ
<=<=>
=
<
=
Other inputs=0~Vcc
>=>
=
<
=
< 1 >
< 3 >
10
< 2 >
>
=
M5M5V416BTP,RT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
cc
VI VO Pd
Ta
Tstg
Parameter
Supply voltage
Input voltage
Output voltage
Power dissipation
Operating temperature
Storage temperature
DC ELECTRICAL CHARACTERISTICS
Symbol
VIH VIL VOH1 IOH= -0.5mA VOH2 IOH= -0.05mA VOL IOL
II IO
Icc1
Icc2
Icc3
Icc4
Note 1: Direction for current flowing into IC is indicated as positive (no mark) Note 2: Typical value is for Vcc=3.0V and Ta=25°C
Parameter
High-level input voltage Low-level input voltage
High-level output voltage 1 High-level output voltage 2
Low-level output voltage Input leakage current Output leakage current
Active supply current ( AC,MOS level )
Active supply current ( AC,TTL level )
Stand by supply current ( AC,MOS level )
Stand by supply current ( AC,TTL level )
VI =0 ~ Vcc
BC1 and BC2=VIH or S1=VIH or S2=VIH or OE=VIH, VI/O=0 ~ Vcc BC1 and BC2 0.2V, S1 0.2V, S2 Vcc-0.2V
other inputs 0.2V or Vcc-0.2V Output - open (duty 100%)
BC1 and BC2=VIL , S=V IL ,S2=VIH other pins =V IH or VIL Output - open (duty 100%)
S1 Vcc - 0.2V, other inputs = 0 ~ Vcc
S2 0.2V, other inputs = 0 ~ Vcc
BC1 and BC2 Vcc - 0.2V
S1 0.2V, S2 Vcc - 0.2V
BC1 and BC2=VIH or S1=VIH or S2=VIL
Other inputs= 0 ~ Vcc
Conditions
With respect to GND With respect to GND With respect to GND
Ta=25°C Standard W-version I-version
(-L, -H) (-LW, -HW) (-LI, -HI)
Conditions
PRELIMINARY
Ratings
Units
-0.5* ~ +4.6
-0.5* ~ Vcc + 0.5
700
V
mW
0 ~ +70
- 20 ~ +85
°C
- 40 ~ +85
- 65 ~ +150
* -3.0V in case of AC (Pulse width 30ns)
°C
< =
2.2
-0.3 *
2.4
Vcc-0.5V
-
f= 1MHz
-
-
-LW, -LI
-L, -LW, -LI
-HW, -HI
-H, -HW, -HI
-HW
-HI
f= 1MHz
+70 ~ +85°C
+70°C +70 ~ +85°C +40 ~ +70°C +25 ~ +40°C
0 ~ +25°C-H
-
-
-
-
-
-
-
-
-
-
* -3.0V in case of AC (Pulse width 30ns)
Limits
5
-
-
-
-
1
0.3
0.3
0.3
-
MaxTypMin
Vcc+0.3V
0.6
0.4 ±1
±1
5040
10 5040 105 48 24 24
12
3.6
1.2
1.2
1.2
0.5
Units
V
µA
mA
µA
mA
< =
CAPACITANCE
Symbol
CI CO
Parameter
Input capacitance
Output capacitance
VI=GND, VI=25mVrms, f=1MHz VO=GND,VO=25mVrms, f=1MHz
Conditions
MITSUBISHI ELECTRIC
Min
Limits
Max
Units
pF
revision-P04, ' 98.12.16
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
5ns
70HW,70LI,70HI
85HW,85LI,85HI
10HW,10LI,10HI
4
70HW,70LI,70HI
85HW,85LI,85HI
10HW,10LI,10HI
M5M5V416BTP,RT
AC ELECTRICAL CHARACTERISTICS
(1) TEST CONDITIONS
Supply voltage Input pulse Input rise time and fall time
Reference level
Output loads
(2) READ CYCLE
Symbol
tCR
ta(A) ta(S1) ta(S2) ta(BC1) ta(BC2) ta(OE) tdis(S1) tdis(S2) ns tdis(BC1) tdis(BC2) tdis(OE) ten(S1) ten(S2) ten(BC1) ten(BC2) ten(OE)
tV(A)
Read cycle time
Address access time Chip select 1 access time Chip select 2 access time
Byte control 1 access time Byte control 2 access time Output enable access time
Output disable time after S1 high
Output disable time after S2 low Output disable time after BC1 high
Output disable time after BC2 high
Output disable time after OE high
Output enable time after S1 low
Output enable time after S2 high Output enable time after BC1 low Output enable time after BC2 low Output enable time after OE low
Data valid time after address
2.7V~3.6V VIH=2.4V,VIL=0.4V
VOH=VOL=1.5V
Transition is measured ±500mV from steady state voltage.(for ten,t dis)
Fig.1,CL=30pF CL=5pF (for ten,tdis)
Parameter
70L,70H,70LW
MaxMin MaxMin MaxMin
70 85
70 70 70
70 70 35 25 25 25 25
25 10 10
10 10
10
85L,85H,85LW
10 10 10 10
5
10
PRELIMINARY
DQ
Fig.1 Output load
Limits
85 85 85 100
85 85 45 30 30 35 30 30 30
10L,10H,10LW
100
100 100
100 100
50 35
35 35
35 10 10
10 10
5
10
1TTL
CL
Including scope and jig capacitance
Units
ns ns ns ns ns ns ns ns
ns ns ns ns ns ns ns ns
ns
(3) WRITE CYCLE
Symbol
tCW tw(W)
tsu(A) tsu(A-WH)
tsu(BC1) tsu(BC2) tsu(S1) tsu(S2) tsu(D) th(D) trec(W)
tdis(W) tdis(OE) ten(W)
ten(OE)
Write cycle time Write pulse width
Address setup time Address setup time with respect to W Byte control 1 setup time Byte control 2 setup time Chip select 1 setup time Chip select 2 setup time Data setup time Data hold time Write recovery time Output disable time from W low Output disable time from OE high Output enable time from W high
Output enable time from OE low
Parameter
70L,70H,70LW
MaxMin MaxMin MaxMin
70 55
0 65 65 65 65 65 35
0
0
25
25 5 5
Limits
85L,85H,85LW
85 60
0 70 70 70 70 70 35
0
0
30 30
5
5
MITSUBISHI ELECTRIC
10L,10H,10LW
100
75
0 85 85 85 85 85 40
0
0
5
5
35 35
Units
ns ns
ns ns ns
ns ns
ns ns ns
ns ns
ns ns ns
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