Mitsubishi M2S56D20ATP, M2S56D30ATP, M2S56D40ATP Datasheet

DDR SDRAM (Rev.1.2)

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Jun. '01 Preliminary

M2S56D20/ 30/ 40ATP

256M Double Data Rate Synchronous DRAM

PRELIMINARY

Some of contents are subject to change without notice.

DESCRIPTION

M2S56D20ATP is a 4-bank x 16,777,216-word x 4-bit, M2S56D30ATP is a 4-bank x 8,388,608-word x 8-bit, M2S56D40ATP is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output data and data strobe are referenced on both edges of CLK. The M2S56D20/30/40ATP achieves very high speed data rate up to 133MHz, and are suitable for main memory in computer systems.

FEATURES

- Vdd=Vddq=2.5V+0.2V

- Double data rate architecture; two data transfers per clock cycle

- Bidirectional, data strobe (DQS) is transmitted/received with data

- Differential clock inputs (CLK and /CLK)

- DLL aligns DQ and DQS transitions

with CLK transitions edges of DQS

- Commands entered on each positive CLK edge;

- data and data mask referenced to both edges of DQS

- 4 bank operation controlled by BA0, BA1 (Bank Address)

- /CAS latency- 2.0/2.5 (programmable)

- Burst length- 2/4/8 (programmable)

- Burst type- sequential / interleave (programmable)

- Auto precharge / All bank precharge controlled by A10

- 8192 refresh cycles /64ms (4 banks concurrent refresh)

- Auto refresh and Self refresh

- Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8)/ A0-8(x16)

- SSTL_2 Interface

- 400-mil, 66-pin Thin Small Outline Package (TSOP II)

- JEDEC standard

Operating Frequencies

Clock RateSpeed

Grade

100MHz-75

CL=2.5 *CL=2 *

133MHz133MHz-75A 133MHz 125MHz100MHz-10

* CL = CAS(Read) Latency

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VDD

VDDQ

DQ0

VSSQ

NC NC

VDDQ

DQ1

VSSQ

NC NC

VDDQ

NC NC

VDD

NC NC

/WE /CAS /RAS

/CS

BA0

BA1

A10/AP

A0 A1

A2 A3

VDD

VDD DQ0

VDDQ

DQ1

VSSQ

DQ2

VDDQ

DQ3

VSSQ

NC NC

VDDQ

NC NC

VDD

NC NC

/WE /CAS /RAS

/CS

BA0

BA1

A10/AP

A0 A1

A2 A3

VDD

256M Double Data Rate Synchronous DRAM

PIN CONFIGURATION(TOP VIEW)

x4 x8

x16

VDD DQ0

VDDQ

DQ1 DQ2

VSSQ

DQ3 DQ4

VDDQ

DQ5 DQ6

VSSQ

DQ7

VDDQ

LDQS

VDD

LDM

/WE /CAS /RAS

/CS

BA0 BA1

A10/AP

VDD

A0 A1

A2 A3

1 2 3 4 5 6 7 8 9 10 11 12 13 14

15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33

66pin TSOP(II)

400mil width

875mil length

0.65mm

Lead Pitch

ROW

A0-12

Column

A0-9,11(x4) A0-9 (x8) A0-8 (x16)

M2S56D20/ 30/ 40ATP

66 65 64 63 62 61 60 59 58 57 56 55 54 53

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34

VSS DQ15 VSSQ

DQ14 DQ13 VDDQ

DQ12 DQ11 VSSQ

DQ10 DQ9 VDDQ DQ8 NC VSSQ UDQS NC

VREF VSS UDM

/CLK

CLK CKE NC A12

A11 A9

A8 A7 A6 A5 A4

VSS

VSS DQ7 VSSQ

NC DQ6 VDDQ

NC DQ5 VSSQ

NC DQ4 VDDQ NC NC VSSQ DQS NC

VREF VSS DM

/CLK

CLK CKE NC A12

A11 A9

A8 A7 A6 A5 A4

VSS

VSS NC VSSQ

NC DQ3 VDDQ

NC NC VSSQ

NC DQ2 VDDQ NC NC VSSQ DQS NC

VREF VSS DM

/CLK

CLK CKE NC A12

A11 A9

A8 A7 A6 A5 A4

VSS

CLK,/CLK : Master Clock

CKE : Clock Enable

/CS : Chip Select

/RAS : Row Address Strobe

/CAS : Column Address Strobe

/WE : Write Enable

DQ0-7 : Data I/O

DQS : Data Strobe

DM : Write Mask

Vref : Reference Voltage

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A0-12 : Address Input

BA0,1 : Bank Address Input

Vdd : Power Supply

VddQ : Power Supply for Output

Vss : Ground

VssQ : Ground for Output

DDR SDRAM (Rev.1.2)

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M2S56D20/ 30/ 40ATP

256M Double Data Rate Synchronous DRAM

PIN FUNCTION

SYMBOL TYPE DESCRIPTION

Clock: CLK and /CLK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CLK and

CLK, /CLK Input

CKE Input

/CS Input Chip Select: When /CS is high, any command means No Operation.

/RAS, /CAS, /WE Input Combination of /RAS, /CAS, /WE defines basic commands.

A0-12 Input

negative edge of /CLK. Output (read) data is referenced to the crossings of CLK and /CLK (both directions of crossing).

Clock Enable: CKE controls internal clock. When CKE is low, internal clock for the following cycle is ceased. CKE is also used to select auto / self refresh. After self refresh mode is started, CKE becomes asynchronous input. Self refresh is maintained as long as CKE is low.

A0-11 specify the Row / Column Address in conjunction with BA0,1. The Row Address is specified by A0-12. The Column Address is specified by A0-9,11(x4), A0-9(x8) and A0-8(x16). A10 is also used to indicate precharge option. When A10 is high at a read / write command, an auto precharge is performed. When A10 is high at a precharge command, all banks are precharged.

BA0,1 Input

DQ0-15(x16), DQ0-7(x8), DQ0-3(x4),

DQS

Vdd, Vss Power Supply Power Supply for the memory array and peripheral circuitry.

VddQ, VssQ Power Supply VddQ and VssQ are supplied to the Output Buffers only.

Vref Input SSTL_2 reference voltage.

Input / Output

Input

Bank Address: BA0,1 specifies one of four banks to which a command is applied. BA0,1 must be set with ACT, PRE, READ, WRITE commands.

Data Input/Output: Data bus

Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered in write data. Used to capture write data. For the x16, LDQS corresponds to the data on DQ0-DQ7; UDQS correspond to the data on DQ8-DQ15

Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. For the x16, LDM corresponds to the data on DQ0-DQ7; UDM corresponds to the data on DQ8-DQ15.

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DDR SDRAM (Rev.1.2)

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BLOCK DIAGRAM

DLL

Memory

Array

Bank #0

Memory

Array

Bank #1

M2S56D20/ 30/ 40ATP

256M Double Data Rate Synchronous DRAM

DQ0 - 15

I/O Buffer

Memory

Array

Bank #2

UDQS,LDQS

QS Buffer

Memory

Array

Bank #3

Mode Register

Address Buffer

A0-12

BA0,1

Type Designation Code

M 2 S 56 D 3 0 A TP –75A

Control Circuitry

Control Signal Buffer

Clock Buffer

/CS /RAS /CAS /WE UDM,

CLK CKE

/CLK

This rule is applied to only Synchronous DRAM family.

Speed Grade 10: 125MHz@CL=2.5,100MHz@CL=2.0

75: 133MHz@CL=2.5,100MHz@CL=2.0

75A: 133MHz@CL=2.5,133MHz@CL=2.0 Package Type TP: TSOP(II) Process Generation Function Reserved for Future Use

Organization 2n2: x4, 3: x8, 4: x16

DDR Synchronous DRAM

Density 56: 256M bits Interface V:LVTTL, S:SSTL_3, _2 Memory Style (DRAM) Mitsubishi Main Designation

LDM

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M2S56D20/ 30/ 40ATP

256M Double Data Rate Synchronous DRAM

BASIC FUNCTIONS

The M2S56D20/30/40ATP provides basic functions, bank (row) activate, burst read / write, bank (row) precharge, and auto / self refresh. Each command is defined by control signals of /RAS, /CAS and /WE at CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip select, refresh option, and precharge option, respectively. To know the detailed definition of commands, please see the command truth table.

/CLK

CLK /CS

/RAS /CAS /WE CKE A10

Chip Select : L=select, H=deselect Command Command Command

Refresh Option @refresh command Precharge Option @precharge or read/write command

define basic commands

Activate (ACT) [/RAS =L, /CAS =/WE =H]

ACT command activates a row in an idle bank indicated by BA.

Read (READ) [/RAS =H, /CAS =L, /WE =H]

READ command starts burst read from the active bank indicated by BA. First output data appears after /CAS latency. When A10 =H at this command, the bank is deactivated after the burst read (autoprecharge, READA)

Write (WRITE) [/RAS =H, /CAS =/WE =L]

WRITE command starts burst write to the active bank indicated by BA. Total data length to be written is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write

(auto-precharge, WRITEA)

Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]

PRE command deactivates the active bank indicated by BA. This command also terminates burst read

/write operation. When A10 =H at this command, all banks are deactivated (precharge all, PREA ).

Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]

REFA command starts auto-refresh cycle. Refresh address including bank address are generated

internally. After this command, the banks are precharged automatically.

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M2S56D20/ 30/ 40ATP

256M Double Data Rate Synchronous DRAM

COMMAND TRUTH TABLE

COMMAND MNEMONIC

Deselect DESEL H X H X X X X X X

No Operation NOP H X L H H H X X X

Row Address Entry &

Bank Activate

Single Bank Precharge PRE H H L L H L V L X

Precharge All Banks

Column Address Entry

& Write

Column Address Entry

& Write with

Auto-Precharge

Column Address Entry

& Read

Column Address Entry

& Read with

Auto-Precharge

ACT H H L L H H V V V

PREA H H L L H L H X

WRITE H H L H L L V L V

WRITEA H H L H L L V H V

READ H H L H L H V L V

READA H H L H L H V H V

CKE

n-1

CKE

/CS /RAS /CAS /WE BA0,1

A10

/AP

A0-9, 11-12

note

Auto-Refresh REFA H H L L L H X X X

Self-Refresh Entry REFS H L L L L H X X X

Self-Refresh Exit REFSX

Burst Terminate TERM H H L H H L X X X

Mode Register Set MRS H H L L L L L L V

H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number

NOTE:

1. Applies only to read bursts with autoprecharge disabled; this command is undefined (and should not be used) for read bursts with autoprecharge enabled, and for write bursts.

2. BA0-BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register;BA0=1 , BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A12 provide the op-code to be written to the selected Mode Register.

L H H X X X X X X L H L H H H X X X

1 2

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M2S56D20/ 30/ 40ATP

256M Double Data Rate Synchronous DRAM

FUNCTION TRUTH TABLE

Current State /CS /RAS /CAS /WE Address Command Action Notes

IDLE H X X X X DESEL NOP

L H H H X NOP NOP L H H L BA TERM ILLEGAL 2 L H L X BA, CA, A10 READ / WRITE ILLEGAL 2 L L H H BA, RA ACT Bank Active, Latch RA L L H L BA, A10 PRE / PREA NOP 4 L L L H X REFA Auto-Refresh 5

L L L L

ROW ACTIVE H X X X X DESEL NOP

L H H H X NOP NOP L H H L BA TERM NOP

L H L H BA, CA, A10 READ / READA

L H L L BA, CA, A10 WRITE / WRITEA L L H H BA, RA ACT Bank Active / ILLEGAL 2

L L H L BA, A10 PRE / PREA Precharge / Precharge All L L L H X REFA ILLEGAL

L L L L

READ(Auto-

Precharge

Disabled)

H X X X X DESEL NOP (Continue Burst to END)

L H H H X NOP NOP (Continue Burst to END) L H H L BA TERM Terminate Burst

L H L H BA, CA, A10 READ / READA

L H L L BA, CA, A10 WRITE / WRITEA ILLEGAL L L H H BA, RA ACT Bank Active / ILLEGAL 2 L L H L BA, A10 PRE / PREA Terminate Burst, Precharge L L L H X REFA ILLEGAL

L L L L

Op-Code, ModeAdd

MRS Mode Register Set 5

Begin Read, Latch CA, Determine Auto-Precharge Begin Write, Latch CA, Determine Auto-Precharge

MRS ILLEGAL

Terminate Burst, Latch CA, Begin New Read, Determine AutoPrecharge

MRS ILLEGAL

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M2S56D20/ 30/ 40ATP

256M Double Data Rate Synchronous DRAM

FUNCTION TRUTH TABLE (continued)

Current State /CS /RAS /CAS /WE Address Command Action Notes

WRITE(Auto-

Precharge

Disabled)

READ with

Auto-Precharge

WRITE with

Auto-Precharge

H X X X X DESEL NOP (Continue Burst to END) L H H H X NOP NOP (Continue Burst to END) L H H L BA TERM ILLEGAL

L H L H BA, CA, A10 READ / READA

L H L L BA, CA, A10 WRITE / WRITEA L L H H BA, RA ACT Bank Active / ILLEGAL 2

L L H L BA, A10 PRE / PREA Terminate Burst, Precharge L L L H X REFA ILLEGAL

L L L L H X X X X DESEL NOP (Continue Burst to END)

L H H H X NOP NOP (Continue Burst to END) L H H L BA TERM ILLEGAL L H L H BA, CA, A10 READ / READA ILLEGAL for Same Bank 6 L H L L BA, CA, A10 WRITE / WRITEA ILLEGAL for Same Bank 6 L L H H BA, RA ACT Bank Active / ILLEGAL 2 L L H L BA, A10 PRE / PREA Precharge / ILLEGAL 2 L L L H X REFA ILLEGAL

L L L L H X X X X DESEL NOP (Continue Burst to END)

L H H H X NOP NOP (Continue Burst to END) L H H L BA TERM ILLEGAL L H L H BA, CA, A10 READ / READA ILLEGAL for Same Bank 7

L H L L BA, CA, A10 WRITE / WRITEA ILLEGAL for Same Bank 7 L L H H BA, RA ACT Bank Active / ILLEGAL 2

L L H L BA, A10 PRE / PREA Precharge / ILLEGAL 2 L L L H X REFA ILLEGAL

L L L L

Op-Code, ModeAdd

MRS ILLEGAL

Terminate Burst, Latch CA, Begin Read, Determine Auto-Precharge Terminate Burst, Latch CA, Begin Write, Determine Auto-Precharge

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M2S56D20/ 30/ 40ATP

256M Double Data Rate Synchronous DRAM

FUNCTION TRUTH TABLE (continued)

Current State /CS /RAS /CAS /WE Address Command Action Notes

PRE-

CHARGING

ROW

ACTIVATING

WRITE RE-

COVERING

H X X X X DESEL NOP (Idle after tRP)

L H H H X NOP NOP (Idle after tRP) L H H L BA TERM ILLEGAL 2 L H L X BA, CA, A10 READ / WRITE ILLEGAL 2 L L H H BA, RA ACT ILLEGAL 2 L L H L BA, A10 PRE / PREA NOP (Idle after tRP) 4 L L L H X REFA ILLEGAL

L L L L

H X X X X DESEL NOP (Row Active after tRCD)

L H H H X NOP NOP (Row Active after tRCD) L H H L BA TERM ILLEGAL 2 L H L X BA, CA, A10 READ / WRITE ILLEGAL 2 L L H H BA, RA ACT ILLEGAL 2 L L H L BA, A10 PRE / PREA ILLEGAL 2 L L L H X REFA ILLEGAL

L L L L

H X X X X DESEL NOP

L H H H X NOP NOP L H H L BA TERM ILLEGAL 2 L H L X BA, CA, A10 READ / WRITE ILLEGAL 2

L L H H BA, RA ACT ILLEGAL 2 L L H L BA, A10 PRE / PREA ILLEGAL 2 L L L H X REFA ILLEGAL

L L L L

Op-Code, ModeAdd

MRS ILLEGAL

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M2S56D20/ 30/ 40ATP

256M Double Data Rate Synchronous DRAM

FUNCTION TRUTH TABLE (continued)

Current State /CS /RAS /CAS /WE Address Command Action Notes

REFRESHING H X X X X DESEL NOP (Idle after tRC)

L H H H X NOP NOP (Idle after tRC) L H H L BA TERM ILLEGAL L H L X BA, CA, A10 READ / WRITE ILLEGAL L L H H BA, RA ACT ILLEGAL L L H L BA, A10 PRE / PREA ILLEGAL L L L H X REFA ILLEGAL

Op-Code, ModeAdd

MRS ILLEGAL

MODE

SETTING

L L L L

H X X X X DESEL NOP (Row Active after tRSC)

L H H H X NOP NOP (Row Active after tRSC) L H H L BA TERM ILLEGAL L H L X BA, CA, A10 READ / WRITE ILLEGAL L L H H BA, RA ACT ILLEGAL L L H L BA, A10 PRE / PREA ILLEGAL L L L H X REFA ILLEGAL

L L L L

ABBREVIATIONS: H=High Level, L=Low Level, X=Don't Care BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No Operation

NOTES:

1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.

2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of that bank.

3. Must satisfy bus contention, bus turn around, write recovery requirements.

4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.

5. ILLEGAL if any bank is not idle.

6. Refer to Read with Auto-Precharge in page 24.

7. Refer to Write with Auto-Precharge in page 26.

ILLEGAL = Device operation and/or data-integrity are not guaranteed.

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FUNCTION TRUTH TABLE for CKE

Current State CKE n-1 CKE n /CS /RAS /CAS /WE Address Action Notes

SELF-

REFRESHING

POWER

DOWN

ALL BANKS

IDLE

H X X X X X X INVALID 1

L H H X X X X Exit Self-Refresh (Idle after tRC) 1

L H L H H H X Exit Self-Refresh (Idle after tRC) 1

L H L H H L X ILLEGAL 1

L H L H L X X ILLEGAL 1

L H L L X X X ILLEGAL 1

L L X X X X X NOP (Maintain Self-Refresh) 1

H X X X X X X INVALID

L H X X X X X Exit Power Down to Idle

L L X X X X X NOP (Maintain Self-Refresh)

H H X X X X X Refer to Function Truth Table 2

H L L L L H X Enter Self-Refresh 2

M2S56D20/ 30/ 40ATP

256M Double Data Rate Synchronous DRAM

H L H X X X X Enter Power Down 2

H L L H H H X Enter Power Down 2

H L L H H L X ILLEGAL 2

H L L H L X X ILLEGAL 2

H L L L X X X ILLEGAL 2

L X X X X X X Refer to Current State =Power Down 2

ANY STATE

other than listed

above

H H X X X X X Refer to Function Truth Table

H L X X X X X Begin CLK Suspend at Next Cycle 3

L H X X X X X Exit CLK Suspend at Next Cycle 3

L L X X X X X Maintain CLK Suspend

ABBREVIATIONS: H=High Level, L=Low Level, X=Don't Care

NOTES:

1. CKE Low to High transition will re-enable CLK and other inputs asynchronously. A minimum setup time must be satisfied before any command other than EXIT.

2. Power-Down and Self-Refresh can be entered only from the All Banks Idle State.

3. Must be legal command.

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SIMPLIFIED STATE DIAGRAM

POWER APPLIED

POWER

PREA

MODE

SET

PRE

CHARGE

ALL

MRS

Active Power

Down

M2S56D20/ 30/ 40ATP

256M Double Data Rate Synchronous DRAM

SELF

REFRESH

REFS

REFSX

AUTO

REFRESH

POWER

DOWN

CKEL

IDLE

ACT

REFA

CKEL

CKEH

ROW

ACTIVE

WRITE READ

WRITE

WRITEA

WRITE

WRITEA READA

WRITEA

PRE PRE

READA

READ

READA

PRE

CHARGE

READ

READA

BURST

STOP

READ

TERM

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Automatic Sequence Command Sequence

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