Mitsubishi Electric Corporation Semiconductor Group FX10ASJ-06 Datasheet
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
FX20ASJ-06
OUTLINE DRAWING Dimensions in mm
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
–60
±20
–20
–80
–20
–20
–80
35
–55 ~ +150
–55 ~ +150
0.26
VGS = 0V
VDS = 0V
L = 100µH
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
°C
°C
g
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
•
4V DRIVE
•
VDSS ...............................................................–60V
•
rDS (ON) (MAX) ................................................ 97mΩ
•
ID ....................................................................–20A
•
Integrated Fast Recovery Diode (TYP.) ...........50ns
6.5
2.3
2.3
0.9 max
1.0 max
2.3
1.0
0.5 ± 0.1
5.5 ± 0.2
10 max
2.3 min 1.5 ± 0.2
1
1
1
2
2
2
3
3
3
0.5 ± 0.2
0.8
5.0 ± 0.2
A
GATE
DRAIN
SOURCE
DRAIN
4
4
4
MITSUBISHI Pch POWER MOSFET
FX20ASJ-06
HIGH-SPEED SWITCHING USE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–60
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.8
73
119
–0.73
10.9
2370
306
147
15
37
131
72
–1.0
—
50
—
±0.1
–0.1
–2.3
97
166
–0.97
—
—
—
—
—
—
—
—
–1.5
3.57
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions
Limits
Min. Typ. Max.
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –60V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –10A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –30V, ID = –10A, VGS = –10V, R
GEN
= RGS = 50Ω
IS = –10A, VGS = 0V
Channel to case
IS = –20A, dis/dt = 100A/µs
PERFORMANCE CURVES
0
10
20
30
40
50
0 20050 100 150
0
–
10
–
20
–
30
–
40
–
50
0
–
2
–
4
–
6
–
8
–
10
PD =
35W
VGS =
–10V
Tc = 25°C
Pulse Test
–6V
–3V
–4V
–5V
–8V
0
–4
–8
–12
–16
–20
0 –1.0 –2.0 –3.0 –4.0 –5.0
–6V
–5V
–4V
–3V
–8V
–10V
VGS =
Tc = 25°C
Pulse Test
–10
0
–2
–3
–5
–7
–10
1
–2
–3
–5
–7
–10
0
–2
–10
1
–3 –5–7 –2
–10
2
–3 –5–7
–10
2
–2
–3
–5
–7
–2
–2 –3 –5–7 –2
tw =
TC = 25°C
Single Pulse
100µs
10ms
1ms
DC
10µs
PD =
35W
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C (°C)
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS (V)
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX20ASJ-06
HIGH-SPEED SWITCHING USE
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