FM200TU-3A
MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
● ID(rms) .......................................................... 100A
● VDSS.............................................................150V
● Insulated Type
● 6-elements in a pack
● Thermistor inside
● UL Recognized
Yellow Card No.E80276
File No.E80271
APPLICATION
AC motor control of forklift (battery power source), UPS
OUTLINE DRAWING & CIRCUIT DIAGRAM
110
±0.25
97
70.9
36
10
30
NP
13
14
5-6.5
38
9.2
UV
1414
32 3216.5
14
202020
B
3
(8.7)
(6)
3.96
W
4
MOUNTINGHOLES
CIRCUIT DIAGRAM
P
(17.5)
4-φ6.5
(14.5)
7-M6NUTS
6.5
(6)(6)
22.75
15.2
16.5
16 1632
36
10
30
7 7
(15.8)
6.5
3
7
1216
A
25
6.5
11.5
4
(14.5)
22.57
9.1
±0.25
90
80
75
67
Tc measured point
Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1
Dimensions in mm
±1.0
35
＋1.0
26
−0.5
LABEL
14
(SCREWING DEPTH)
(7)G
U
P
U
P
(1)S
UVW
U
N
(10)G
U
N
(4)S
N
(8)G
(2)SVP
(11)G
(5)S
V
P
V
N
V
N
(9)G
(3)S
(12)G
(6)S
W
P
W
P
W
N
W
N
(13)
(14)
(1)SUP
(7)G
U
(13)TH1
P
(2)S
V
P
(8)G
V
P
(14)TH2
(3)S
(9)G
W
P
U
N
V
N
W
(4)S
(10)G
W
P
(5)S
(11)G
U
N
V
(6)S
N
(12)GWN
N
A
B
May 2006
MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DSS
VGSS
ID
IDM
IDA
1
IS*
ISM*
PD*
PD*
Tch
Tstg
Viso
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
1
4
Maximum power dissipation
4
Channel temperature
Storage temperature
Isolation voltage
—
Mounting torque
Weight
—
(Tch = 25°C unless otherwise specified.)
ConditionsItem
G-S Short
D-S Short
T
C’ = 122°C*
Pulse*
L = 10µH Pulse*
Pulse*
3
2
2
2
TC = 25°C
T
C’ = 25°C*
3
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting M6
Typical value
ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)
ConditionsItemSymbol
I
DSS
VGS(th)
IGSS
rDS(ON)
(chip)
V
DS(ON)
(chip)
(lead)
R
Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf
1
trr*
1
Qrr*
1
VSD*
Rth(ch-c)
Rth(ch-c’)
Rth(c-f)
Rth(c’-f’)
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
Lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
V
DS = VDSS, VGS = 0V
I
D = 10mA, VDS = 10V
V
GS = VGSS, VDS = 0V
I
D = 100A
V
GS = 15V
I
D = 100A
V
GS = 15V
I
D = 100A
terminal-chip
V
DS = 10V
V
GS = 0V
DD = 80V, ID = 100A, VGS = 15V
V
V
DD = 80V, ID = 100A, VGS1 = VGS2 = 15V
R
G = 13Ω, Inductive load switching operation
I
S = 100A
I
S = 100A, VGS = 0V
MOSFET part (1/6 module)*
MOSFET part (1/6 module)*
7
3
Case to fin, Thermal grease Applied*8 (1/6 module)
Case to fin, Thermal grease Applied*
Tch = 25°C
T
ch = 125°C
T
ch = 25°C
T
ch = 125°C
T
ch = 25°C
T
ch = 125°C
3, *8
(1/6 module)
Min.
—
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
150
±20
100
200
100
100
200
410
560
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600
Limits
Typ.
—
6
—
4.8
9.1
0.48
0.91
1.2
1.68
—
—
—
820
—
—
—
—
—
6.5
—
—
—
0.1
0.09
Max.
1
7.3
1.5
6.6
—
0.66
—
—
—
50
7
4
—
400
250
450
200
200
—
1.3
0.30
0.22
—
—
UnitRatings
V
V
A
A
A
A
A
W
W
°C
°C
V
N • m
N • m
g
Unit
mA
V
µA
mΩ
V
mΩ
nF
nC
ns
ns
µC
V
°C/W
THERMISTOR PART
Symbol
6
RTH*
6
B*
1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).
*
2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating.
*
3: TC’ measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.
*
4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*
5: TTH is thermistor temperature.
*
6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)
*
7: TC measured point is shown in page OUTLINE DRAWING.
*
8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”.
*
Resistance
B Constant
TTH = 25°C*
Resistance at TTH = 25°C, 50°C*
5
ConditionsParameter
5
Min.
—
—
Limits
Typ.
100
4000
Max.
—
—
Unit
kΩ
K
May 2006
PERFORMANCE CURVES
MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
OUTPUT CHARACTERISTICS
200
160
(A)
D
120
80
40
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE ON-STATE
VOLTAGE VS. TEMPERATURE
12
(mΩ)
DS(ON)
ID = 100A
10
8
6
4
DRAIN-SOURCE
2
V
GS
15V
(TYPICAL)
= 20V
(TYPICAL)
V
GS
10V
= 12V
12V
V
T
GS
ch
= 15V
Chip
= 25°C
DS
(V)
Chip
9V
TRANSFER CHARACTERISTICS
(TYPICAL)
Tch = 25°C
(A)
D
200
150
V
DS
= 10V
Tch = 125°C
100
50
DRAIN CURRENT I
0
5791113 15
GATE-SOURCE VOLTAGE V
GATE THRESHOLD
VOLTAGE VS. TEMPERATURE
(TYPICAL)
(V)
GS(th)
7
6
5
VDS = 10V
D
I
= 10mA
4
3
2
1
GS
Chip
(V)
0
ON-STATE RESISTANCE r
04080120 16020 60 100 140
CHANNEL TEMPERATURE T
DRAIN-SOURCE ON-STATE
VOLTAGE VS. GATE BIAS
3.0
T
ch
= 25°C
(V)
2.5
DS(ON)
2.0
1.5
1.0
DRAIN-SOURCE
0.5
ON-STATE VOLTAGE V
0
048121620
GATE-SOURCE VOLTAGE V
(TYPICAL)
ch
(°C)
Chip
ID = 200A
ID = 100A
ID = 50A
GS
(V)
0
04080120 16020 60 100 140
GATE THRESHOLD VOLTAGE V
CHANNEL TEMPERATURE T
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
CAPACITANCE (nF)
3
2
V
GS
–1
10
–1
2
10
(TYPICAL)
= 0V
0
357 2
10
357 2
DRAIN-SOURCE VOLTAGE V
10
1
ch
(°C)
C
iss
C
oss
C
rss
357
DS
(V)
10
2
May 2006
MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
GATE CHARGE CHARACTERISTICS
20
ID = 100A
(TYPICAL)
(V)
GS
16
V
DD
12
= 60V V
8
4
GATE-SOURCE VOLTAGE V
0
0 200 400 600 800 12001000
GATE CHARGE QG (nC)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
3
10
7
5
3
(ns)
2
2
10
7
5
3
SWITCHING TIME
2
1
10
1
23 57
10
(TYPICAL)
10
DD
t
d(off)
t
d(on)
t
r
t
f
Conditions:
DD
V
GS
V
G
= 13Ω
R
ch
T
Inductive load
2
23 57
= 80V
= 80V
= ±15V
= 125°C
10
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
V
GS
7
5
(A)
3
S
2
2
10
7
5
3
2
SOURCE CURRENT I
1
10
0.5 0.6 0.7 0.8 0.9 1.0
(TYPICAL)
= 0V
Tch = 125°C
SOURCE-DRAIN VOLTAGE V
Chip
Tch = 25°C
SD
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
4
10
7
5
3
2
(ns)
3
10
7
5
3
2
2
10
7
5
SWITCHING TIME
3
2
1
3
10
0
(TYPICAL)
t
d(off)
t
d(on)
t
r
t
f
Conditions:
DD
= 80V
V
V
GS
= ±15V
D
= 100A
I
ch
= 125°C
T
Inductive load
40 80 12020 60 100 140
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
1
10
7
5
3
2
0
10
(mJ/pulse)
7
5
E
sw(on)
3
2
–1
10
7
5
3
E
sw(off)
2
SWITCHING LOSS
–2
10
1
23 57
10
DRAIN CURRENT ID (A)
HALF-BRIDGE
(TYPICAL)
E
rr
Conditions:
V
V
R
T
Inductive load
2
10
DD
= 80V
GS
= ±15V
G
= 13Ω
ch
= 125°C
23 57
10
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
rr
(TYPICAL)
E
sw(on)
E
sw(off)
Conditions:
DD
= 80V
V
GS
= ±15V
V
I
D
= 100A
ch
= 125°C
T
Inductive load
1
10
7
5
3
2
0
10
(mJ/pulse)
7
5
E
3
2
–1
10
7
5
3
2
SWITCHING LOSS
–2
3
10
0408012020 60 100 140
GATE RESISTANCE RG (Ω)
May 2006
MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
(ns)
rr
(A), t
rr
I
CHIP LAYOUT
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
10
10
10
10
3
7
5
3
2
2
7
5
3
2
1
7
5
3
2
0
10
t
rr
I
rr
1
(TYPICAL)
23 57
10
2
Conditions:
V
DD
= 80V
V
GS
= ±15V
R
G
= 13Ω
T
ch
= 25°C
Inductive load
23 57
10
SOURCE CURRENT IS (A)
(110)
(97)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10
10
10
7
5
3
2
10
7
5
3
2
10
1
–1
–2
–3
–3
–3
10
0
10
7
5
3
2
–1
10
7
5
3
2
–2
10
7
5
NORMALIZED TRANSIENT
3
THERMAL IMPEDANCE Zth(ch-c)
10
3
2
–3
Single pulse
T
ch
Per unit base = R
–2
23 57 23 57 23 57 23 57
10
10
–1
= 25°C
th(ch-c)
–5
10
0
10
= 0.30°C/W
–4
23 57 23 57
10
TIME (s)
48.4
29.6
57.6
24.6
71
TrUP
TrUN
12 6
UV
25.6
58.6
90.6
NP
TrVP
TrVN
13
Tr WP
14
TrWN
(90)
(80)
(67)
LABEL SIDE
W
91.6
May 2006
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