Mitsubishi Electric Corporation Semiconductor Group FD1000FX-90 Datasheet

MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES

FD1000FX-90

HIGH POWER, HIGH FREQUENCY,

PRESS PACK TYPE

FD1000FX-90

OUTLINE DRAWING Dimensions in mm

R4

9

5

15°

`'39

φ 60

φ

60

φ 102 MAX

0.4 MIN 0.4 MIN

M5 ✕ 0.8
DEPTH 2.5

21 ± 0.5

● IF(AV) Average forward current........................800A

RRM

● V

● Q

Repetitive peak reverse voltage

RR Reverse recovery charge ................. 2000µC

....................4500V

CATHODE

TYPE

NAME
ANODE

● Press pack type

APPLICATION

High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers

MAXIMUM RATINGS

Parameter

VRRM
VRSM
VR(DC)
VLTDS

Symbol Parameter Conditions UnitRatings

I

F(RMS)

IF(AV)
IFSM

2

I

t

Tj
Tstg

Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Long term DC stability

RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required

—

Weight

—

f = 60Hz, sine wave θ = 180°, Tf = 77°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz

Recommended value 39
Standard value

Voltage class

90
4500
4500
3600
3000

1250

800

20

1.7 ✕ 10
–40 ~ +125
–40 ~ +150

26.5 ~ 43.0

700

6

ELECTRICAL CHARACTERISTICS

Symbol

IRRM
VFM

QRR Reverse recovery charge — — 2000 µC
Rth(j-f)

Repetitive peak reverse current
Forward voltage

Thermal resistance

Parameter Test conditions

Tj = 125°C, VRRM Applied
T

j = 125°C, IFM = 2500A, Instantaneous measurement

I

FM = 800A, diF/dt = –30A/µs, VR = 150V,

T

j = 125°C

Junction to fin

Limits

Min Typ Max

—
—

—

—
—

—

150

3.5

0.017

UnitSymbol

V
V
V
V

A
A

kA

2

A

°C
°C

kN

g

Unit

mA

V

°C/W

s

Aug.1998

PERFORMANCE CURVES

MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES

FD1000FX-90

HIGH POWER, HIGH FREQUENCY,

PRESS PACK TYPE

MAXIMUM FORWARD CHARACTERISTICS

5

10

7
5

3
2

4

10

7
5

3
2

3

10

7
5

FORWARD CURRENT (A)

3
2

2

10

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

Tj = 125°C

Tj = 25°C

FORWARD VOLTAGE (V)

MAXIMUM THERMAL IMPEDANCE

CHARACTERISTIC

(JUNCTION TO FIN)

0.020

0

2310

5710

1

0.016

0.012

0.008

0.004

THERMAL IMPEDANCE (°C/W)

0

–3

2310

5710–223 5710–123 5710

RATED SURGE FORWARD CURRENT

20

16

12

8

4

SURGE FORWARD CURRENT (kA)

0

1235710

20 30 5070100

CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM POWER DISSIPATION

CHARACTERISTICS

3200

RESISTIVE, INDUCTIVE LOAD

2800

THREE-PHASE
HALF WAVE,

2400

FULL WAVE

2000

RECTIFICATION
CIRCUIT

DC CIRCUIT

1600
1200

800

POWER DISSIPATION (W)

400

0

0

SINGLE-PHASE
HALF WAVE, FULL WAVE
RECTIFICATION CIRCUIT

400 800 1200

16000

TIME (S)

ALLOWABLE FIN TEMPERATURE

VS. AVERAGE FORWARD CURRENT

130
120
110

RESISTIVE, INDUCTIVE LOAD

SINGLE-PHASE
HALF WAVE, FULL WAVE
RECTIFICATION CIRCUIT

100

90
80

THREE-PHASE

70

HALF WAVE,

FIN TEMPERATURE (°C)

FULL WAVE

60

RECTIFICATION
CIRCUIT

50

400 800 1200

AVERAGE FORWARD CURRENT (A)

DC CIRCUIT

AVERAGE FORWARD CURRENT (A)

REVERSE RECOVERY CHARGE,

REVERSE RECOVERY TIME VS.

JUNCTION TEMPERATURE

4

10

7

IFM = 800A

5

d

iF/dt

= –30A/µs

3

V

RM

= 150V

2

3

10

Q

RR

7
5

3
2

2

10

7
5

trr
3
2

1

10

7
5

3

REVERSE RECOVERY TIME (µS)

2

0

REVERSE RECOVERY CHARGE (µC),

16000

10

0 20 40 60 80 100 120 140 160

MAX.

AV.

I

FM

diF/d

trr

AV.

t

trr

t

V

RM

Irm



2

MAX.

+

A

i

•

0

AK

V

–

Irm

RR

=

Q

JUNCTION TEMPERATURE (°C)

Aug.1998