Mitsubishi Electric Corporation Semiconductor Group FD1000FH-56 Datasheet

MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES

FD1000FH-56

HIGH POWER, HIGH FREQUENCY,

PRESS PACK TYPE

FD1000FH-56

OUTLINE DRAWING Dimensions in mm

R4

9

5

15°

‘38

φ 50

φ 50

φ 92 MAX

0.4 MIN 0.4 MIN

M5 × 0.8
DEPTH 2.5

21 ± 0.5

● IF(AV) Average forward current......................1000A

RRM

● V

● Q

Repetitive peak reverse voltage

RR Reverse recovery charge ................. 1000µC

....... 2500V, 2800V

CATHODE

TYPE

NAME

ANODE

● Press pack type

APPLICATION

High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers

MAXIMUM RATINGS

Symbol

VRRM
VRSM
VR(DC)

Symbol Parameter Conditions UnitRatings

I

F(RMS)

IF(AV)
IFSM

2

I

t

Tj
Tstg

Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage

RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required

—

Weight

—

Parameter

50
2500
2800
2000

f = 60Hz, sine wave θ = 180°, Tf = 79°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz

Recommended value 29.4
Standard value

Voltage class

56
2800
3100
2240

2.6 × 10
–40 ~ +125
–40 ~ +150

26.5 ~ 35.3

1570
1000

25

5

ELECTRICAL CHARACTERISTICS

Symbol

IRRM
VFM

QRR Reverse recovery charge — — 1000 µC
Rth(j-f)

Repetitive peak reverse current
Forward voltage

Thermal resistance

Parameter Test conditions

Tj = 125°C, VRRM Applied
T

j = 125°C, IFM = 2500A, Instantaneous measurement

I

FM = 1000A, diF/dt = –30A/µs, VR = 150V,

T

j = 125°C

Junction to fin

Limits

Min Typ Max

—
—

—

—
—

0.025

—

80

1.9

Aug.1998

Unit

V
V
V

A
A

kA

2

A

°C
°C

kN

g

Unit
mA

V

°C/W

s

PERFORMANCE CURVES

MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES

FD1000FH-56

HIGH POWER, HIGH FREQUENCY,

PRESS PACK TYPE

MAXIMUM FORWARD CHARACTERISTICS

4

10

7
5

3

Tj = 125°C

2

3

10

7
5

3
2

2

10

7
5

FORWARD CURRENT (A)

3
2

1

10

Tj = 25°C

FORWARD VOLTAGE (V)

MAXIMUM THERMAL IMPEDANCE

CHARACTERISTIC

(JUNCTION TO FIN)

0.032

0

2310

5710

1

0.028

0.024

0.020

0.016

0.012

0.008

0.004

THERMAL IMPEDANCE (°C/W)

0

–3

2310

–2

5710

23 5710–123 5710

RATED SURGE FORWARD CURRENT

25

20

15

10

5

SURGE FORWARD CURRENT (kA)

3.20 0.8 1.6 2.4 2.80.4 1.2 2.0

0

1235710

20 30 5070100

CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM POWER DISSIPATION

CHARACTERISTICS

3200

RESISTIVE, INDUCTIVE LOAD

2800

SINGLE-PHASE

2400

HALF WAVE, FULL WAVE
RECTIFICATION CIRCUIT

2000

THREE-PHASE

1600

HALF WAVE,
FULL WAVE
RECTIFICATION

1200

CIRCUIT

DC CIRCUIT

800

POWER DISSIPATION (W)

400

0

0

400 800 1200

16000

TIME (S)

ALLOWABLE FIN TEMPERATURE

VS. AVERAGE FORWARD CURRENT

130
120
110

RESISTIVE, INDUCTIVE LOAD

SINGLE-PHASE
HALF WAVE, FULL WAVE
RECTIFICATION CIRCUIT

100

90

THREE-PHASE

80

HALF WAVE,
FULL WAVE
RECTIFICATION

70

FIN TEMPERATURE (°C)

CIRCUIT

60
50

400 800 1200

AVERAGE FORWARD CURRENT (A)

DC CIRCUIT

AVERAGE FORWARD CURRENT (A)

REVERSE RECOVERY CHARGE,

REVERSE RECOVERY TIME VS.

JUNCTION TEMPERATURE

3

10

7

Q

RR

5
3

2

2

10

7
5

3
2

trr

1

10

7
5

IFM = 1000A

3
2

d

iF/dt

REVERSE RECOVERY TIME (µS)

REVERSE RECOVERY CHARGE (µC),

16000

10

= –30A/µs

V

RM

= 150V

0

0 20 40 60 80 100 120 140 160

A

i

AK •

V

MAX.

AV.

FM

I

diF/d

+

0
–

Irm

RR

Q

t

trr

t

V

RM

trr

✕

Irm

=

2

MAX.

AV.

JUNCTION TEMPERATURE (°C)

Aug.1998