Mitsubishi Electric Corporation Semiconductor Group FA01220A Datasheet
MITSUBISHI SEMICONDUCTOR GaAs FET
Test conditions
ABSOLUTE MAXIMUM RATINGS
ρin
FA01220A
GaAs FET HYBRID IC
DESCRIPTION
FA01220A is RF Hybrid IC designed for 1.5GHz band
small size handheld radio.
FEATURES
• Low voltage 3.5V
• High gain 20.5B
• High efficiency 50%
• High power 30.5dBm
APPLICATION
PDC1.5GHz
Unit:mm
GND
1
2
3
4
GND
10.0
0.8
2.0
6.0
tolerance:±0.2
8
7
6
5
1
RF INPUT RF OUTPUT
2
VD1 GND
3
GND GND
4
VD2 VG1,2
5
6
7
8
Symbol Parameter Ratings
VD
Pin
TC(op)
Tstg
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
Drain voltage
Input power
Operating case temp
Storage temp
ELECTRICAL CHARACTERISTICS(Ta=25˚C)
Symbol Unit
f
Pin
IDt
Frequency
Input power
Total drain current
Return loss
ACP50
ACP100
2fo
3fo
±50kHz adjacent channel power
±100kHz adjacent channel power
2nd harmonics
3rd harmonics
Parameter
Condition
Tc=25˚C, Po≤30.5dBm
Tc=25˚C, ZG=ZL=50Ω
PO=30.5dBm
VD1=VD2=3.5V
VG1,2=-2.5V
ZG=ZL=50Ω
(π/4DQPSK)
Ditto
(CW)
4.5
15
-20 to +85
-30 to +90
Unit
dBm
˚C
˚C
1429
–
–
–
–
–
–
–
V
Limits
Typ MaxMin
–
(7)
640
–
–
–
– -30
– -30
1453
10
720
-6
-47
-62
MHz
dBm
mA
dB
dBc
dBc
dBc
dBc
Nov. ´97
TYPICAL CHARACTERISTICS 1
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01220A
GaAs FET HYBRID IC
PO,ACP vs Pin
35
VG=-2.5V
VD=3.5V
f=1441MHz
30
25
20
15 -70
-5
PO
ACP-50K
ACP-100K
0 5 10 15
-30
-40
-50
-60
Pin(dBm)
Pin, ACP vs f
10
VG=-2.5V
VD=3.5V
PO=30.5dBm(AVG)
5
0
1405
1417 1441
1429
Pin
ACP-50k
ACP-100k
1453
1465
1477
-20
-30
-40
-50
-60
-70
PO,IDt vs Pin
35
VG=-2.5V
VD=3.5V
f=1441MHz
30
25
20
15 200
-5
PO
IDt
0 5 10 15
1000
900
800
700
600
500
400
300
Pin(dBm)
10
VG=-2.5V
VD=3.5V
9
PO=30.5dBm(AVG)
8
7
6
5
4
3
2
1
0
1405
1417 1441
Pin, IDt vs f
1429
Pin
IDt
1453
1465
1000
900
800
700
600
500
1477
f(MHz)
f(MHz)
Nov. ´97
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