Mitsubishi Electric Corporation Semiconductor Group FA01219A Datasheet
MITSUBISHI SEMICONDUCTOR GaAs FET
Nov. ´97
Test conditions
ABSOLUTE MAXIMUM RATINGS
ρin
FA01219A
GaAs FET HYBRID IC
DESCRIPTION
FA01219A is RF Hybrid IC designed for 0.8GHz band
small size handheld radio.
FEATURES
• Low voltage 3.5V
• High gain 22.5B
• High efficiency 50%
• High power 30.5dBm
APPLICATION
PDC0.8GHz
GND
1
2
3
4 5
GND
10.0
0.8
2.0
6.0
tolerance:±0.2
8
7
6
1
RF INPUT RF OUTPUT
2
VD1 GND
3
GND GND
4
VD2 VG1,2
Unit:mm
5
6
7
8
Symbol Parameter Ratings
VD
Pin
TC(op)
Tstg
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
Drain voltage
Input power
Operation case temperature
Storage temperature
ELECTRICAL CHARACTERISTICS(Ta=25˚C)
Symbol Unit
f
Pin
IDt
Frequency
Input power
Total drain current
Return loss
ACP50
ACP100
2fo
3fo
±50kHz adjacent channel power
±100kHz adjacent channel power
2nd harmonics
3rd harmonics
Parameter
Po≤30.5dBm
ZG=ZL=50Ω
Po=30.5dBm
VD1=VD2=3.5V
VG1,2=-2.5V
ZG=ZL=50Ω
(π/4DQPSK)
Ditto
(CW)
TcCondition
25˚C
25˚C
–
–
4.5
15
-20 to +85
-30 to +90
Unit
dBm
925
–
–
–
–
–
–
–
V
˚C
˚C
Limits
Typ MaxMin
–
5
640
–
–
–
– -30
– -30
958
8
720
-6
-47
-62
MHz
dBm
mA
dB
dBc
dBc
dBc
dBc
MITSUBISHI SEMICONDUCTOR GaAs FET
Nov. ´97
FA01219A
GaAs FET HYBRID IC
TYPICAL CHARACTERISTICS 1
Frequency
(MHz)
925.0
941.5
958.0
35
30
25
20
15
10
-5.0 5.0
Pin Po Id1 Id2 Idt Ig1,2
(dBm) (dBm) (mA) (mA) (mA) (mA) (dBc) (dBc) (dBc) (dBc) (dBc) (dBc) (dB)
5.78
6.05
6.52
30.5
30.5
30.5
PO,ACP vs Pin CHARACTERISTICS
f=925MHz
VD1=3.5V
VD2=3.5V
VG=-2.5V
PO
ACP+50k
0.0
Pin(dBm)
93
90
91
ACP-50k
ACP+100k
ACP-100k
552
547
543
10.0
-30
-40
-50
-60
-70
-80
644
637
634
-1.86
-1.86
-1.86
VD1=3.5V,VD2=3.5V,VG=-2.5V
-50k +50k -100k +100k 2SP 3SP RL
-49.9
-51.7
-51.6
-49.2
-51.2
-51.6
-62.5
-63.6
-64.4
-62.6
-64.1
-64.6
-37.5
-37.4
-37.2
-49.2
-49.7
-50.2
-10.7
-9.4
-8.5
PO,IDs vs Pin CHARACTERSTICS
35 1000
900
30
25
20
15
10
-5 0 5 10
PO
IDt
ID2
ID1
800
700
600
500
400
300
200
100
0
Pin(dBm)
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