Mitsubishi Electric Corporation Semiconductor Group FA01215 Datasheet
MITSUBISHI SEMICONDUCTOR GaAs FET
Nov. ´97
Test conditions
ABSOLUTE MAXIMUM RATINGS
FA01215
GaAs FET HYBRID IC
DESCRIPTION
FA01215 is RF Hybrid IC designed for 900MHz band
small size handheld radio.
FEATURES
• Low voltage 3.0V
• High gain 24dB(typ.)
• High efficiency 50%
• High power 34.5dBm
APPLICATION
GSM IV
0.6
14.7
14.2
2 3.5 3.52 2
2 31 4 5
2.5 2.5 2.5 2.5 1.952.25
6
0.5±0.15
Unit:mm
RF INPUT
1
VG1,2
2
3
VD1
4
VD2
5
RF OUTPUT
6
GND(FIN)
0.25±0.1
Symbol Parameter Ratings
VD
Pin
TC(op)
Tstg
Note: Each maximum ratings is guaranteed independently and P.W.=580µs,duty=1/8 operation.
Drain voltage
Input power
Operation case temperature.
Storage temperature.
PO≤34.5dBm
ZG=ZL=50Ω
TaCondition
25˚C
25˚C
–
–
-20 to +85
-30 to +90
4.5
15
Unit
V
dBm
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
890
34.5
50
-3
–
–
–
Limits
Typ MaxMin
–
–
–
–
–
–
– -60
915
–
–
0
-6
-30
Symbol Unit
f
PO
ht
Igt
rin
2fo,3fo
OSC.T
VSWR.T
Note1: Pin=13dBm,VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50Ω
Note2: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50Ω
Note3: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ZG=ZL=50Ω
Note4: PO=0~34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ρL=3:1(all phase),ZG=50Ω
Note5: PO=34.5dBm(Pin controlled),VD1=VD2=4.5V(Pulse:P.W.=580µs,duty=1/8),VG1,2=-2.0V,ρL=6:1(all phase),ZG=50Ω
Frequency
Output power
Total efficiency
Total gate current
Return loss
2nd harmonics, 3rd harmonics
Stability
Load VSWR tolerance
Parameter
Note1
Note2
Note3
Note4
Note5
No degradation or destroy
MHz
dBm
%
mA
dB
dBc
dBc
–
Nov. ´97
TYPICAL CHARACTERISTICS (Ta=25˚C)
ηT
OUTPUT POWER, TOTAL EFFICIENCY
40
VD=3.0V
35
VG=-2.0V
f=902.5MHz
30
25
20
15
10
5
0
-5
-30 -25 -20 -10 -5
vs INPUT POWER
PO
-15
0 5 10 15
INPUT POWER Pin(dBm)
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01215
GaAs FET HYBRID IC
90
80
70
60
50
40
30
20
10
0
EQUIVALENT CIRCUIT
RF INPUT
MATCHING
CIRCUIT
1ST GATE
2ND GATE
1ST DRAIN
MATCHING
CIRCUIT
2ND DRAIN
MATCHING
CIRCUIT
RF OUTPUT
GND(FIN)
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