Mitsubishi Electric Corporation Semiconductor Group CR20F Datasheet
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR20F
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR20F
OUTLINE DRAWING
1
2
3
•IT (AV) .........................................................................20A
•V
DRM ............................. 400V/600V/800V/1000V/1200V
GT ..........................................................................50mA
•I
APPLICATION
DC motor control, electric furnace control, static switches, DC supply
2
3
(22)
1.6
1
φ3.5
3
3
φ1.5
2
CATHODE
ANODE
GATE
TYPE NAME
2
LOCK WASHER
NUT
SOLDERLESS TERMINAL
TELEGRAPH WIRE
2.63~6.64mm
Note: Mica washer and spacer are
provided only upon request.
3.5
φ14
1
3
2.1
M6×1
8
4.4
Dimensions
19
25.5
14
2
in mm
36
11
MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Symbol
I
T (RMS)
IT (AV)
ITSM
2
t
I
di/dt
P
GM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
RMS on-state current
Average on-state current
Surge on-state current
2
I
t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
—
Weight
—
Parameter
Parameter
Voltage class
8
400
480
320
400
480
320
Commercial frequency, sine half wave, 180° conduction, T
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
D=1/2VDRM, ITM=60A, IG=0.1A. Tj=25°C, f=60Hz
V
Typical value
12
600
720
480
600
720
480
Conditions
16
800
960
640
800
980
640
1000
1200
1000
1000
c=86°C
20
800
800
24
1200
1350
960
1200
1200
960
Ratings
31.5
20
300
380
100
5.0
0.5
10
5
2
–30 ~ +125
–30 ~ +125
30
2.94
20
Unit
V
V
V
V
V
V
Unit
A
A
A
2
A
A/µs
W
W
V
V
A
°C
°C
kg·cm
N·m
g
s
Feb.1999
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
dv/dt
V
GT
VGD
IGT
tgt
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical-rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Turn-on time
Thermal resistance
Contact thermal resistance
Parameter
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Test conditions
j=125°C, VRRM applied
T
T
j=125°C, VDRM applied
T
c=25°C, ITM=60A, Instantaneous value
T
j=125°C, VD=2/3VDRM
Tj=25°C, VD=6V, IT=0.5A
T
j=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, IT=0.5A
T
c=25°C, VD=100V, IT=15A, IG=0.1A
Junction to case
Case to fin
CR20F
MEDIUM POWER USE
Limits
Max.
Typ.
Min.
4.0
—
—
4.0
—
—
1.8
—
—
—
—
50
3.0
—
—
—
0.25
—
50
—
—
10
—
—
1.0
—
—
0.4
—
—
Unit
mA
mA
V
V
V
V
mA
µs
°C/W
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
ON-STATE CURRENT (A)
3
2
0
10
0
1.0
0.5
ON-STATE VOLTAGE (V)
Tc = 25°C
1.5 2.0
125°C
2.5 3.0 3.5
4.0
RATED SURGE ON-STATE CURRENT
320
280
240
200
160
120
80
40
SURGE ON-STATE CURRENT (A)
0
10023 5710123 5710
44
CONDUCTION TIME
(CYCLES AT 60Hz)
2
Feb.1999
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