Mitsubishi Electric Corporation Semiconductor Group CR20EY Datasheet

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉

CR20EY

MEDIUM POWER, INVERTER USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

CR20EY

•IT (AV) .........................................................................20A

•V

DRM .................................................... 400V/600V/800V

GT ..........................................................................50mA

•I

OUTLINE DRAWING

3

(22)

1.6

1

2

CATHODE

1

ANODE

2

GATE

3

LOCK WASHER

φ3.5

3

3

φ1.5

TYPE NAME

2

NUT

Note: Mica washer and spacer are

provided only upon request.

Dimensions

8

19

2

1

3.5

φ14

SOLDERLESS TERMINAL
TELEGRAPH WIRE




2.63~6.64mm

3

2.1

M6×1

25.5

14

4.4

2

in mm

36

11




APPLICATION

Inverter, DC choppers, pulse generator

MAXIMUM RATINGS

Symbol

RRM

V
VRSM
VDRM
VDSM

Symbol

I

T (RMS)

IT (AV)
ITSM

2

t

I

di/dt
P

GM

PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg

Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage

RMS on-state current
Average on-state current
Surge on-state current

2

I

t

for fusing

Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature

Mounting torque

—

Weight

—

Parameter

Parameter

Commercial frequency, sine half wave, 180° conduction, T
60Hz sine half wave 1 full cycle, peak value, non-repetitive

Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current

D=1/2VDRM, ITM=60A, IG=0.1A, Tj=25°C, f=60Hz

V

Typical value

400
480
400
480

Voltage class

8

Conditions

12
600
720
600
720

c=74°C

16
800
850
800
800

Ratings

31.5
20

300

380

100

5.0

0.5
10

5

2
–30 ~ +125
–30 ~ +125

30

2.94
20

Unit

V
V
V
V

Unit

A
A
A

2

A

A/µs

W
W

V
V
A

°C
°C

kg·cm

N·m

g

s

Feb.1999

ELECTRICAL CHARACTERISTICS

Symbol

I

RRM

IDRM
VTM
dv/dt
V

GT

VGD
IGT
tgt
tq
Rth (j-c)
Rth (c-f)

Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Turn-on time
Turn-off time
Thermal resistance
Contact thermal resistance

Parameter

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉

CR20EY

MEDIUM POWER, INVERTER USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

Test conditions

j=125°C, VRRM applied

T
T

j=125°C, VDRM applied

T

c=25°C, ITM=60A, Instantaneous value

T

j=125°C, VD=2/3VDRM

Tj=25°C, VD=6V, IT=0.5A
T

j=125°C, VD=1/2VDRM

Tj=25°C, VD=6V, IT=0.5A
T

j=25°C, VD=100V, IT=15A, IG=0.1A

I

T=20A, VR=50V, VD=1/2VDRM, Tj=125°C, dv/dt=20V/µs

Junction to case
Case to fin, greased

Min.

100

0.25

Limits

Max.

Typ.

6.0

—

—

6.0

—

—

2.5

—

—

—

3.0

—

—

—
—

—

—

—

—

—

1.0

—

—

0.40

—

—

Unit

mA
mA

V

—

V/µs

V
—
50
10
15

V

mA

µs

µs
°C/W
°C/W

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS

3

10

7
5

3
2

2

10

7
5

3
2

1

10

7
5

ON-STATE CURRENT (A)

3
2

0

10

1.0

1.5
ON-STATE VOLTAGE (V)

Tc = 125°C

25°C

2.5 3.0 3.5

2.0

4.0

RATED SURGE ON-STATE CURRENT

320
280
240
200
160
120

80
40

SURGE ON-STATE CURRENT (A)

0

10023 5710123 5710

44

CONDUCTION TIME

(CYCLES AT 60Hz)

2

Feb.1999

GATE CHARACTERISTICS

3
2

VFGM = 10V

1

10

7
5

VGT = 3V

3
2

0

10

7
5

3

GATE VOLTAGE (V)

10

2

–1

7
5

VGD = 0.25V

1

2310

5710223 5710323 5710

GATE CURRENT (mA)

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉

MEDIUM POWER, INVERTER USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(JUNCTION TO CASE)

IGT
Tj =
125°C
25°C
30°C

PG(AV) =

0.5W

PGM = 5W

IFGM
= 2A

0

2310

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1
0

TRANSIENT THERMAL IMPEDANCE (°C/W)

4

–3

2310

1

5710

5710–223 5710–123 5710

TIME (s)

CR20EY

0

MAXIMUM AVERAGE POWER DISSIPATION

(SINGLE-PHASE HALF WAVE)

80
70
60
50

60°

θ = 30°

90°

120°

40
30
20
10

AVERAGE POWER DISSIPATION (W)

0

0

θ

360°

RESISTIVE,
INDUCTIVE
LOADS

AVERAGE ON-STATE CURRENT (A)

ALLOWABLE AMBIENT TEMPERATURE VS.

AVERAGE ON-STATE CURRENT

(SINGLE-PHASE HALF WAVE)

160
140
120
100

80

NATURAL
CONVECTION

θ = 180°

90°

θ

360°

RESISTIVE,
INDUCTIVE
LOADS

60
40
20

AMBIENT TEMPERATURE (°C)

BX40-06

120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED

0

FIN

4 6 8 12141618

180°

ALLOWABLE CASE TEMPERATURE VS.

AVERAGE ON-STATE CURRENT

(SINGLE-PHASE HALF WAVE)

160
140
120
100

80

θ

360°

RESISTIVE,
INDUCTIVE
LOADS

60
40

CASE TEMPERATURE (°C)

32164 8 12 20 24 28

θ = 30° 60° 120°

20

0

0

90°

180°

32164 8 12 20 24 28

AVERAGE ON-STATE CURRENT (A)

MAXIMUM AVERAGE POWER DISSIPATION

(SINGLE-PHASE FULL WAVE)

80
70
60

RESISTIVE

50

LOADS

θ θ

360°

θ = 30°

60°

90°

180°

120°

40
30
20
10

AVERAGE POWER DISSIPATION (W)

201020

0

164 8 12 20 24 28

320

AVERAGE ON-STATE CURRENT (A)

AVERAGE ON-STATE CURRENT (A)

Feb.1999

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉

CR20EY

MEDIUM POWER, INVERTER USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

ALLOWABLE CASE TEMPERATURE VS.

AVERAGE ON-STATE CURRENT

(SINGLE-PHASE FULL WAVE)

160
140
120
100

80
60
40

CASE TEMPERATURE (°C)

20

0

0 164 8 12 20 24 28 32

AVERAGE ON-STATE CURRENT (A)

MAXIMUM AVERAGE POWER DISSIPATION

80
70
60
50
40
30
20
10

AVERAGE POWER DISSIPATION (W)

0

0

θ = 30° 60° 120°90° 180°

(RECTANGULAR WAVE)

θ = 30°

RESISTIVE, INDUCTIVE LOADS

RESISTIVE LOADS

90°

60°

164 8 12 20 24 28 32

120°

180°

θ

360°

θ θ

360°

270°

DC

ALLOWABLE AMBIENT TEMPERATURE VS.

AVERAGE ON-STATE CURRENT

(SINGLE-PHASE FULL WAVE)

160
140
120
100

80
60
40
20

AMBIENT TEMPERATURE (°C)

160
140
120
100

80
60
40

CASE TEMPERATURE (°C)

20

BX40-06 FIN
120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED

θ = 180°

0

0 164 8 12 20 24 28 32

AVERAGE ON-STATE CURRENT (A)

ALLOWABLE CASE TEMPERATURE VS.

AVERAGE ON-STATE CURRENT

(RECTANGULAR WAVE)

θ = 30° 60°

0

0 164 8 12 20 24 28 32

180° 270°90°

120°

θ θ

360°

RESISTIVE
LOADS
NATURAL
CONVECTION

θ = 90°

θ

360°

RESISTIVE,
INDUCTIVE
LOADS

DC

AVERAGE ON-STATE CURRENT (A)

ALLOWABLE AMBIENT TEMPERATURE VS.

AVERAGE ON-STATE CURRENT

160
140
120
100

80
60
40
20

AMBIENT TEMPERATURE (°C)

0

(RECTANGULAR WAVE)

BX40-06 FIN

120 120 t3

ALUMINUM PLATE

PAINTED BLACK

AND GREASED

DC

θ = 180°

90°

0 164 8 12 20 24 28 32

AVERAGE ON-STATE CURRENT (A)

θ

360°

RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION

AVERAGE ON-STATE CURRENT (A)

100

90

100 (%)

80

)

70

)

60

t°C

125°C

j=

j=

50

(T

(T

40
30
20
10

TURN-OFF TIME

TURN-OFF TIME

0

0

20 40

JUNCTION TEMPERATURE (°C)

TURN-OFF TIME VS.

JUNCTION TEMPERATURE

TYPICAL EXAMPLE

IT = 20A, tw = 50µs

R = 50V, VD = 300V

V
dv/dt = 20V/µs

60

80 100

120

140

160

Feb.1999

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉

CR20EY

MEDIUM POWER, INVERTER USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

200
180

100 (%)

160
140

)

)

120

= iA

= 20A

T

T

100

I

I

(

(

80
60
40

TURN-OFF TIME

TURN-OFF TIME

20

0

0

48

TURN-OFF TIME VS.

ON-STATE CURRENT

TYPICAL EXAMPLE

Tj = 125°C

R

= 50V

V
di/dt = 20V/µs

D

= 1/2V

V

12

16 20

ON-STATE CURRENT (A)

24

28

DRM

32

GATE TRIGGER CURRENT·VOLTAGE VS.

100 (%)

200

)

180

)

160

= t°C

= 25 °C

j

j

140

T

T

(

(

120
100

VOLTAGE

VOLTAGE

·

·

GATE TRIGGER CURRENT

GATE TRIGGER CURRENT

JUNCTION TEMPERATURE

GATE TRIGGER CURRENT

TYPICAL EXAMPLE

GATE TRIGGER

80
60
40
20

0

–20 0

20

JUNCTION TEMPERATURE (°C)

VOLTAGE

40 60

80

100

120

Feb.1999