Mitsubishi Electric Corporation Semiconductor Group CR12MB Datasheet
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR12BM
APPLICATION
Automatic strobe flasher
•I
T (AV) .........................................................................12A
•V
DRM ..............................................................400V/600V
•I
GT ..........................................................................30mA
Symbol
V
RRM
VRSM
VR (DC)
VDRM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
320
12
600
720
480
600
480
Symbol
I
T (RMS)
IT (AV)
ITSM
I
2
t
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180° conduction, T
c=91°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
°C
°C
g
Ratings
18.8
12.0
360
544
5
0.5
6
10
2
–40 ~ +125
–40 ~ +125
1.5
10.5 MIN
OUTLINE DRAWING
Dimensions
in mm
TO-220C
1.5 MAX
4
1.3
TYPE
NAME
VOLTAGE
CLASS
∗
3
1
2
0.5
2.6
2.5 2.5
0.8
12.5 MIN
3.8 MAX
10.5
4.5
1
∗
Measurement
point of case
temperature
1
2
3
4
CATHODE
ANODE
GATE
ANODE
8.6
Feb.1999
10023 5710
1
160
80
23 5710
2
44
240
320
400
120
40
200
280
360
0
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
Tc = 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-c)
Rth (j-a)
Test conditions
T
j=125°C, VDRM applied
T
j=125°C, VDRM applied
T
c=25°C, ITM=40A
T
j=25°C, VD=6V, IT=1A
T
j=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, IT=1A
T
j=25°C, VD=12V
Junction to case
Junction to ambient
Unit
mA
mA
V
V
V
mA
mA
°C/W
Typ.
—
—
—
—
—
—
15
—
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
—
—
—
—
0.2
—
—
—
—
Max.
2.0
2.0
1.6
1.5
—
30
—
1.2
70
PERFORMANCE CURVES
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