Mitsubishi Electric Corporation Semiconductor Group CR12AM Datasheet
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR12AM
T (AV) .........................................................................12A
•I
•V
DRM ..............................................................400V/600V
GT ..........................................................................30mA
•I
OUTLINE DRAWING
10.5 MAX
3.2±0.2
2.5
CATHODE
1
ANODE
2
GATE
3
ANODE
4
∗
231
TO-220
TYPE
NAME
VOLTAGE
CLASS
24
3
16 MAX
3.8 MAX
12.5 MIN
1
4
7.0
φ3.6±0.2
1.0
0.8
2.5
0.5
4.5
Measurement point of
∗
case temperature
Dimensions
in mm
4.5
1.3
2.6
APPLICATION
Switching mode power supply, ECR, motor control
MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VD (DC)
Symbol
I
T (RMS)
IT (AV)
ITSM
2
t
I
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state
RMS on-state current
Average on-state current
Surge on-state current
2
I
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
—
Parameter
Parameter
Commercial frequency, sine half wave, 180° conduction, T
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
400
500
320
400
320
Voltage class
c=91°C
12
600
720
480
600
480
Ratings
18.8
12.0
360
544
5
0.5
6
10
2
–40 ~ +125
–40 ~ +125
2.0
8
Conditions
Unit
V
V
V
V
V
Unit
A
A
A
A
W
W
V
V
A
°C
°C
g
2
s
Feb.1999
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-c)
✽1.The contact thermal resistance Rth (c-f) is 1.0°C/W with greased.
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Parameter
j=125°C, VRRM applied
T
T
j=125°C, VDRM applied
T
c=25°C, ITM=40A,
T
j=25°C, VD=6V, IT=1A
T
j=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, IT=1A
T
j=25°C, VD=12V
Junction to case
✽1
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Test conditions
Min.
—
—
—
—
0.2
—
—
—
Limits
Typ.
—
—
—
—
—
—
15
—
Max.
2.0
2.0
1.6
1.5
—
30
—
1.2
Unit
mA
mA
V
V
V
mA
mA
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
3
10
7
Tc = 25°C
5
3
2
2
10
7
5
3
2
1
10
7
5
ON-STATE CURRENT (A)
3
2
0
10
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
400
360
320
280
240
200
160
120
80
40
SURGE ON-STATE CURRENT (A)
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
0
10023 5710
44
1
23 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
Loading...