Mitsubishi Electric Corporation Semiconductor Group CR10CY Datasheet
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
CR10CY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR10CY
•IT (AV) .........................................................................10A
•V
DRM ..............................................................400V/600V
GT ..........................................................................40mA
•I
OUTLINE DRAWING
3
φ2.0 MIN
19.5 MAX
1.9 MIN
MICA WASHER
φ32×φ6×t0.25
SPACER
φ9×φ6.2×t1
SOLDERLESS TERMINAL
TELEGRAPH WIRE
1.04~2.63mm
LOCK WASHER M6
BRASS NUT M6×1
10 MAX
2
Note: Mica washer and spacer are
provided only upon request.
(16.2)
2
φ8.7 MAX
3 MIN
M6×1
Dimensions
1
14
26 MAX
11 MAX
1
2
CATHODE
1
ANODE
2
GATE
3
in mm
3
APPLICATION
Inverter, DC choppers, DC static switches, pulse generator
MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VDRM
VDSM
Symbol
I
T (RMS)
IT (AV)
ITSM
2
t
I
di/dt
P
GM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
RMS on-state current
Average on-state current
Surge on-state current
2
I
t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
—
Weight
—
Parameter
Parameter
8
400
500
400
500
Conditions
Commercial frequency, sine half wave, 180°C conduction, T
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
D=1/2VDRM, ITM=30A, IG=0.1A, Tc=25°C, f=60Hz
V
Typical value
Voltage class
c=66°C
12
600
720
600
720
Ratings
15.5
10
200
165
100
5.0
0.5
10
5
2
–30 ~ +125
–30 ~ +125
30
2.94
8.8
Unit
V
V
V
V
Unit
A
A
A
2
A
A/µs
W
W
V
V
A
°C
°C
kg·cm
N·m
g
s
Feb.1999
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
dv/dt
V
GT
VGD
IGT
tgt
tq
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Turn-on time
Turn-off time
Thermal resistance
Contact thermal resistance
Parameter
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
CR10CY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Test conditions
j=125°C, VRRM applied
T
T
j=125°C, VDRM applied
T
c=25°C, ITM=30A, Instantaneous value
T
j=125°C, VD=2/3VDRM
Tj=25°C, VD=6V, IT=0.5A
T
j=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, IT=0.5A
T
j=25°C, VD=100V, IT=10A, IG=0.1A
I
T=10A, VR=50V, VD=1/2VDRM, Tj=125°C, dv/dt=20V/µs
Junction to case
Case to fin, greased
Min.
100
0.25
Limits
Max.
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.55
—
—
4.0
4.0
2.5
2.5
2.0
Unit
mA
mA
V
—
V/µs
V
—
40
10
15
V
mA
µs
µs
°C/W
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
3
10
7
5
3
2
2
10
7
5
Tc = 125°C
3
2
1
10
7
5
ON-STATE CURRENT (A)
3
2
0
10
1.5 2.0 2.5 3.0 3.5 4.01.0
ON-STATE VOLTAGE (V)
Tc = 25°C
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
SURGE ON-STATE CURRENT (A)
0
10023 5710
44
1
23 5710
CONDUCTION TIME
(CYCLES AT 60Hz)
2
Feb.1999
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