Mitsubishi Electric Corporation Semiconductor Group CM75TU-24H Datasheet
A
B
F
G
EE
G
EHHS
MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
R 4 - Mounting
Holes
K
L
GuP
D
C
Measured
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 3.54±0.01 90.0±0.25
C 4.02 102.0
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.91 23.0
G 0.47 12.0
H 0.85 21.7
J 0.91 23.0
EuP
TC
Point
5 - M5 NUTS
P
GuP
EuP
GuN
EuN
N
GvP
EvP
u
EE
U
GwP
EwP
v
H
J
GvP
EvP
V
GvN
EvN
T
C
GuN
EuN
J
Dimensions Inches Millimeters
GvN
EvN
w
E
H
GwP
EwP
W
GwN
EwN
K 0.15 3.75
L 0.67 17.0
M 1.91 48.5
N 0.03 0.8
P 0.32 8.1
Q 1.02 26.0
R 0.22 Dia. 5.5 Dia.
S 0.57 14.4
Measured
Point
GwN
EwN
N
TAB#110 t=0.5
P
Q
M
K
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six
IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected superfast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified system assembly and thermal management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TU-24H is a
1200V (V
), 75 Ampere Six-
CES
IGBT Module.
Type Amperes Volts (x 50)
Current Rating V
CM 75 24
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM75TU-24H Units
Junction T emperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Main Terminal – 2.5~3.5 N · m
Mounting Torque, M5 Mounting – 2.5~3.5 N · m
Weight – 680 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
75 Amperes
150* Amperes
75 Amperes
150* Amperes
600 Watts
2500 Vrms
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 7.5mA, VCE = 10V 4.5 6 7.5 Volts
IC = 75A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts
IC = 75A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
VCC = 600V, IC = 75A, VGE = 15V – 280 – nC
IE = 75A, VGE = 0V – – 3.2 Volts
rating.
j(max)
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VCE = 10V, VGE = 0V – – 3.7 nF
VCC = 600V, IC = 75A, – – 100 ns
V
= V
GE1
= 15V, – – 200 ns
GE2
RG = 4.2Ω, Resistive – – 250 ns
Load Switching Operation – – 350 ns
IE = 75A, diE/dt = -150A/µs – – 300 µC
IE = 75A, diE/dt = -150A/µs – 0.41 – µC
––11nF
– – 2.2 nF
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
Q Per IGBT 1/6 Module – – 0.21 °C/W
th(j-c)
D Per Free-Wheel Diode 1/6 Module – – 0.47 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.015 – °C/W
Sep.1998
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