Mitsubishi Electric Corporation Semiconductor Group CM75TF-28H Datasheet

MITSUBISHI IGBT MODULES

CM75TF-28H

HIGH POWER SWITCHING USE

INSULA TED TYPE

B
D

QQ

XXX

N

S

Z - M5 THD
(7 TYP.)

U

J

K

AA M

H

u

PGvPGwP

u

PEvPEwP

E

G

P

G

E

u

NGvNGwN

u

NEvNEwN

UVW

N

M

P

GuP
EuP

U

GuN
EuN

N

M

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.21 107.0
B 4.02 102.0
C 3.54±0.01 90.0±0.25
D 3.15±0.01 80.0±0.25
E 2.01 51.0
F 1.38 35.0
G 1.28 32.5
H 1.26 Max. 32.0 Max

J 1.18 30.0
K 0.98 25.0
L 0.96 24.5

M 0.79 20.0
N 0.67 17.0

P

R

GvP
EvP

V

GvN
EvN

P

N

L

C A

E

F

T

G

Y - DIA.

AAM

(4 TYP.)

V

GwP
EwP

W

GwN
EwN

Dimensions Inches Millimeters

P 0.57 14.5
Q 0.55 14.0
R 0.47 12.0
S 0.43 11.0
T 0.39 10.0
U 0.33 8.5
V 0.30 7.5
X 0.24 6.0
Y 0.22 5.5
Z M5 Metric M5

AA 0.08 2.0

TAB #110, t = 0.5

P

N

Description:

Mitsubishi IGBT Modules are de­signed for use in switching applica­tions. Each module consists of six
IGBTs in a three phase bridge con­figuration, with each transistor hav­ing a reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys­tem assembly and thermal man­agement.

Features:

u Low Drive Power
u Low V

CE(sat)

u Discrete Super-Fast Recovery

Free-Wheel Diode

u High Frequency Operation
u Isolated Baseplate for Easy

Heat Sinking

Applications:

u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM75TF-28H
is a 1400V (V

), 75 Ampere

CES

Six-IGBT Module.

Type Current Rating V

Amperes Volts (x 50)

CM 75 28

CES

Sep.1998

MITSUBISHI IGBT MODULES

CM75TF-28H

HIGH POWER SWITCHING USE

INSULA TED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM75TF-28H Units
Junction T emperature T
Storage T emperature T
Collector-Emitter Voltage (G-E-SHORT) V
Gate-Emitter Voltage (C-E-SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N · m
Weight – 830 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

j(max)

iso

rating.

–40 to 150 °C
–40 to 125 °C

1400 Volts

±20 Volts

75 Amperes

150* Amperes

75 Amperes

150* Amperes

600 Watts

2500 Vrms

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. T yp. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 7.5mA, VCE = 10V 5.0 6.5 8.0 Volts

IC = 75A, VGE = 15V – 3.1 4.2** Volts

IC = 75A, VGE = 15V, Tj = 150°C – 2.95 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

EC

VCC = 800V, IC = 75A, VGE = 15V – 383 – nC

IE = 75A, V

= 0V – – 3.8 Volts

GE

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. T yp. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay T ime t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VGE = 0V, VCE = 10V – – 5.3 nF

VCC = 800V, IC = 75A, – – 350 ns

V

= V

GE1

= 15V, RG = 4.2Ω – – 250 ns

GE2

IE = 75A, diE/dt = –150A/µs – – 300 ns
IE = 75A, diE/dt = –150A/µs – 0.75 – µC

– – 15 nF

– – 3 nF
– – 150 ns

– – 500 ns

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. T yp. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.025 °C/W

Per IGBT – – 0.21 °C/W

Per FWDi – – 0.47 °C/W

Sep.1998

MITSUBISHI IGBT MODULES

CM75TF-28H

HIGH POWER SWITCHING USE

INSULA TED TYPE

OUTPUT CHARACTERISTICS

(TYPICAL)

150

VGE = 20V

15

13

14

120

, (AMPERES)

C

90

Tj = 25oC

12

11

60

10

30

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

9
8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

IC = 150A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

0 4 8 12 16 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

4

10

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

(TYPICAL)

t

d(off)

t

f

t

d(on)

t

r

COLLECTOR CURRENT, IC, (AMPERES)

IC = 75A

IC = 30A

VCC = 800V
V

= ±15V

GE

= 4.2 Ω

R

G

T

= 125°C

j

2

10

TRANSFER CHARACTERISTICS

(TYPICAL)

150

VCE = 10V

120

, (AMPERES)

C

90

Tj = 25°C

= 125°C

T

j

60

30

COLLECTOR CURRENT, I

0

0 4 8 12 16 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

2

10

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0 1.0 2.01.5 2.5 3.53.0 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

2

10

(TYPICAL)

(TYPICAL)

I

rr

t

rr

10

10

1

, (AMPERES)

0

rr

5

4

, (VOLTS)

CE(sat)

3

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 30 60 90 120

2

10

, (nF)

1

10

res

, C

oes

, C

ies

0

10

-1

10

CAPACITANCE, C

-2

10

10

20

16

, (VOLTS)

GE

12

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

VGE = 15V

COLLECTOR-CURRENT, IC, (AMPERES)

VGE = 0V

-1

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

IC = 75A

(TYPICAL)

Tj = 25°C

= 125°C

T

j

CAPACITANCE VS. V

(TYPICAL)

0

10

GATE CHARGE, V

VCC = 600V

VCC = 800V

CE

C

ies

C

oes

C

res

1

10

GE

150

10

2

8

REVERSE RECOVERY TIME, t

di/dt = -150A/µsec

= 25°C

T

j

1

3

10

10

0

10

EMITTER CURRENT, IE, (AMPERES)

1

10

10

2

10

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

-1

0

0 150 300

GATE CHARGE, QG, (nC)

450 600

Sep.1998

MITSUBISHI IGBT MODULES

CM75TF-28H

HIGH POWER SWITCHING USE

INSULA TED TYPE

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.21°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

1

10

-1

10

-2

10

-3

-4

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.47°C/W

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

Sep.1998