Mitsubishi Electric Corporation Semiconductor Group CM75TF-28H Datasheet

MITSUBISHI IGBT MODULES
CM75TF-28H
HIGH POWER SWITCHING USE
INSULA TED TYPE
B D
QQ
XXX
N
S
Z - M5 THD (7 TYP.)
U
J
K
AA M
H
u
PGvPGwP
u
PEvPEwP
E
G
P
G
E
u
NGvNGwN
u
NEvNEwN
UVW
N
M
P
GuP EuP
U
GuN EuN
N
M
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0 B 4.02 102.0 C 3.54±0.01 90.0±0.25 D 3.15±0.01 80.0±0.25 E 2.01 51.0 F 1.38 35.0 G 1.28 32.5 H 1.26 Max. 32.0 Max
J 1.18 30.0 K 0.98 25.0 L 0.96 24.5
M 0.79 20.0 N 0.67 17.0
P
R
GvP EvP
V
GvN EvN
P
N
L
E
F
T
G
Y - DIA.
AAM
(4 TYP.)
V
GwP EwP
W
GwN EwN
Dimensions Inches Millimeters
P 0.57 14.5 Q 0.55 14.0 R 0.47 12.0 S 0.43 11.0 T 0.39 10.0 U 0.33 8.5 V 0.30 7.5 X 0.24 6.0 Y 0.22 5.5 Z M5 Metric M5
AA 0.08 2.0
TAB #110, t = 0.5
P
N
Description:
Mitsubishi IGBT Modules are de­signed for use in switching applica­tions. Each module consists of six IGBTs in a three phase bridge con­figuration, with each transistor hav­ing a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified sys­tem assembly and thermal man­agement.
Features:
u Low Drive Power u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM75TF-28H is a 1400V (V
), 75 Ampere
CES
Six-IGBT Module.
Type Current Rating V
Amperes Volts (x 50)
CM 75 28
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM75TF-28H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM75TF-28H Units Junction T emperature T Storage T emperature T Collector-Emitter Voltage (G-E-SHORT) V Gate-Emitter Voltage (C-E-SHORT) V Collector Current (TC = 25°C) I Peak Collector Current I Emitter Current** (TC = 25°C) I Peak Emitter Current** I Maximum Collector Dissipation (TC = 25°C, Tj 150°C) P
j
stg CES GES
C
CM
E
EM
c
Mounting Torque, M5 Main Terminal 1.47 ~ 1.96 N · m Mounting Torque, M5 Mounting 1.47 ~ 1.96 N · m Weight 830 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
iso
rating.
–40 to 150 °C –40 to 125 °C
1400 Volts
±20 Volts
75 Amperes
150* Amperes
75 Amperes
150* Amperes
600 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. T yp. Max. Units Collector-Cutoff Current I Gate Leakage Current I Gate-Emitter Threshold Voltage V Collector-Emitter Saturation Voltage V
CES GES
GE(th)
CE(sat)
VCE = V VGE = V
, VGE = 0V 1.0 mA
CES
, VCE = 0V 0.5 µA
GES
IC = 7.5mA, VCE = 10V 5.0 6.5 8.0 Volts
IC = 75A, VGE = 15V 3.1 4.2** Volts
IC = 75A, VGE = 15V, Tj = 150°C 2.95 Volts Total Gate Charge Q Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 800V, IC = 75A, VGE = 15V 383 nC
IE = 75A, V
= 0V 3.8 Volts
GE
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. T yp. Max. Units Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Resistive Turn-on Delay T ime t
d(on)
Load Rise Time t Switching Turn-off Delay Time t
d(off)
Times Fall Time t Diode Reverse Recovery Time t Diode Reverse Recovery Charge Q
ies oes res
r
f
rr
rr
VGE = 0V, VCE = 10V 5.3 nF
VCC = 800V, IC = 75A, 350 ns
V
= V
GE1
= 15V, RG = 4.2 250 ns
GE2
IE = 75A, diE/dt = –150A/µs 300 ns IE = 75A, diE/dt = –150A/µs 0.75 µC
15 nF
3 nF – 150 ns
500 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. T yp. Max. Units Thermal Resistance, Junction to Case R Thermal Resistance, Junction to Case R Contact Thermal Resistance R
th(j-c) th(j-c) th(c-f)
Per Module, Thermal Grease Applied 0.025 °C/W
Per IGBT 0.21 °C/W
Per FWDi 0.47 °C/W
Sep.1998
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