Mitsubishi Electric Corporation Semiconductor Group CM75TF-12H Datasheet
MITSUBISHI IGBT MODULES
CM75TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
X
Z - M4 THD
(7 TYP.)
GuPEuPGvPEvPGwPEwP
G
uNEuNGvNEvNGwNEwN
D
U
GuP
P
GuN
N
G
TAB #110, t = 0.5
F
EuP
EuN
P
N
N
AA
H
U
L
GvP
GvN
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.02±0.02 102±0.5
B 3.58±0.02 91.0±0.5
C 3.15±0.01 80.0±0.25
D 2.913±0.01 74.0±0.25
E 1.69 43.0
F 1.18+0.06/-0.02 30.0+1.5/-0.5
G 1.18 30.0
H 1.16 29.5
J 1.06 27.0
K 0.96 24.5
L 0.87 22.0
M 0.79 20.0
N 0.67 17.0
C
QXQ
UVW
M M
EvP
EvN
XN
V
Dimensions Inches Millimeters
P 0.65 16.5
Q 0.55 14.0
R 0.47 12.0
S 0.43 11.0
T 0.39 10.0
U 0.33 8.5
V 0.32 8.1
X 0.24 6.0
Y 0.22 Dia. Dia. 5.5
Z M4 Metric M4
AA 0.08 2.0
AB 0.28 7.0
AA
S
P
P
G
N
R
T
J
K
B
E
Description:
Y DIA. (4 TYP.)
L
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
V
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected superfast recovery free-wheel diode. All
AB
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
P
GwP
EwP
tem assembly and thermal management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
GwN
N
EwN
W
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM75TF-12H
is a 600V (V
), 75 Ampere
CES
Six-IGBT Module.
Type Current Rating V
Amperes Volts (x 50)
CM 75 12
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM75TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM75TF-12H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M4 Main Terminal – 0.98 ~ 1.47 N · m
Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N · m
Weight – 540 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
j(max)
rating.
–40 to 150 °C
–40 to 125 °C
600 Volts
±20 Volts
75 Amperes
150* Amperes
75 Amperes
150* Amperes
310 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 7.5mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 75A, VGE = 15V – 2.1 2.8** Volts
IC = 75A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 300V, IC = 75A, VGE = 15V – 225 – nC
IE = 75A, VGE = 0V – – 2.8 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
Times Fall T ime t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
d(off)
f
rr
rr
VGE = 0V, VCE = 10V – – 2.6 nF
VCC = 300V, IC = 75A, – – 300 ns
V
= V
GE1
= 15V, RG = 8.3Ω – – 200 ns
GE2
IE = 75A, diE/dt = –150A/µs – – 110 ns
IE = 75A, diE/dt = –150A/µs – 0.20 – µC
– – 7.5 nF
– – 1.5 nF
– – 120 ns
– – 300 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.033 °C/W
Per IGBT – – 0.40 °C/W
Per FWDi – – 0.90 °C/W
Sep.1998
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