Mitsubishi Electric Corporation Semiconductor Group CM75E3U-24H Datasheet

D

C

TC Measured

Point

E

CM

MITSUBISHI IGBT MODULES

CM75E3U-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

A
B

H

GF

J

E2 C1C2E1

G2G2

L

2 - Mounting
Holes
(6.5 Dia.)

V

U

3-M5 Nuts

O

P PQ

R

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.7 94.0
B 3.15±0.01 80.0±0.25
C 1.89 48.0
D 0.94 24.0
E 0.28 7.0
F 0.67 17.0
G 0.91 23.0
H 0.91 23.0

J 0.43 11.0

L 0.16 4.0

O

E2

M

N

TAB #110 t = 0.5

S

T

E2
G2

C1

Dimensions Inches Millimeters

M 0.47 12.0
N 0.53 13.5
O 0.1 2.5
P 0.63 16.0
Q 0.98 25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5
S 0.3 7.5

T 0.83 21.2
U 0.16 4.0
V 0.51 13.0

Description:

Mitsubishi IGBT Modules are de­signed for use in switching applica­tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di­ode and an anode-collector con­nected super-fast recovery free­wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

u Low Drive Power
u Low V

CE(sat)

u Discrete Super-Fast Recovery

Free-Wheel Diode

u High Frequency Operation
u Isolated Baseplate for Easy

Heat Sinking

Application:

u Brake

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM75E3U-24H is a
1200V (V

), 75 Ampere IGBT

CES

Module.

Type Amperes Volts (x 50)

Current Rating V

CM 75 24

CES

Sep.1998

MITSUBISHI IGBT MODULES

CM75E3U-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM75E3U-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C
CM

E

EM

c

Mounting Torque, M5 Main Terminal – 2.5 ~ 3.5 N · m
Mounting Torque, M6 Mounting – 3.5 ~ 4.5 N · m
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
75 Amperes
150* Amperes
75 Amperes

150* Amperes

600 Watts

2500 Vrms

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 7.5mA, VCE = 10V 4.5 6 7.5 Volts

IC = 75A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts

IC = 75A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
Emitter-Collector Voltage V

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

G
EC
FM

VCC = 600V, IC = 75A, VGE = 15V – 280 – nC

IE = 75A, VGE = 0V – – 3.2 Volts

IF = 75A, Clamp Diode Part – – 3.2 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies

oes

res

d(on)

r

d(off)

f

rr

rr

rr

rr

VCE = 10V, VGE = 0V – – 3.7 nF

VCC = 600V, IC = 75A, – – 100 ns

V

= V

GE1

GE2

RG = 4.2Ω, Resistive – – 250 ns

Load Switching Operation – – 350 ns
IE = 75A, diE/dt = -150A/µs – – 300 ns
IE = 75A, diE/dt = -150A/µs – 0.41 – µC
IF = 75A, Clamp Diode Part – – 300 ns

diF/dt = -150A/µs – 0.41 – µC

= 15V, – – 200 ns

––11nF

– – 2.2 nF

Sep.1998

MITSUBISHI IGBT MODULES

CM75E3U-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

Q Per IGBT Module – – 0.21 °C/W

th(j-c)

D Per FWDi Module – – 0.47 °C/W

th(j-c)

th(j-c)
th(c-f)

Clamp Diode Part – – 0.47 °C/W

Per Module, Thermal Grease Applied – 0.035 – °C/W

OUTPUT CHARACTERISTICS

(TYPICAL)

150

125

100

, (AMPERES)

C

75

Tj = 25

VGE = 20V

o

C

15

12

11

10

50

25

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

IC = 75A

9

8

IC = 150A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

0 4 8 12 16 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

IC = 30A

150

125

100

, (AMPERES)

C

TRANSFER CHARACTERISTICS

VCE = 10V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

75

50

25

COLLECTOR CURRENT, I

0

0 4 8 12 16 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

2

10

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

1.0 1.5 2.0 2.5 3.0 3.5

EMITTER-COLLECTOR VOLTAGE, V

(TYPICAL)

, (VOLTS)

EC

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

COLLECTOR-EMITTER

VGE = 15V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 25 50 75 100 125

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

2

10

VGE = 0V

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

(TYPICAL)

0

10

1

10

150

CE

C

ies

C

oes

C

res

2

10

Sep.1998

MITSUBISHI IGBT MODULES

CM75E3U-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING CHARACTERISTICS

3

10

VCC = 600V
V

= ±15V

GE

R

= 4.2Ω

G

T

= 125°C

j

2

10

1

10

SWITCHING TIME, (ns)

0

10

0

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

-3

10

1

th(j-c)

10

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

HALF-BRIDGE

(TYPICAL)

t

d(off)

t

f

t

d(on)

t

r

1

10

TRANSIENT THERMAL

(IGBT)

-2

10

th(j-c)

-1

= 0.21°C/W

REVERSE RECOVERY CHARACTERISTICS

3

10

di/dt = -150A/µsec
T

= 25°C

, (ns)

j

rr

2

10

(TYPICAL)

t

rr

I

rr

10

10

2

, (AMPERES)

rr

1

20

15

, (VOLTS)

GE

10

IC = 75A

GATE CHARGE, V

VCC = 400V

GE

VCC = 600V

5

REVERSE RECOVERY TIME, t

1

2

10

0

10

1

10

10

10

10

10

10

1

th(j-c)

10

0

10

-1

-1

10

• (NORMALIZED VALUE)

th

-2

-2

10

= R

th

Z

0

EMITTER CURRENT, IE, (AMPERES)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

-2

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

10

(FWDi)

10

th(j-c)

1

-1

= 0.47°C/W

10

0

10

10

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

10

2

1

10

10

0

0 100

-1

-2

200

GATE CHARGE, QG, (nC)

400300

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-5

10

TIME, (s)

-4

10

-3

10

-3

10

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-5

10

TIME, (s)

-3

-4

10

10

-3

10

Sep.1998