Mitsubishi Electric Corporation Semiconductor Group CM75DY-24H Datasheet

MITSUBISHI IGBT MODULES

CM75DY-24H

HIGH POWER SWITCHING USE

INSULA TED TYPE

A
B

C

FF

M

D

E2C2E1

K

E2G1 G2

E1

C1

J

Q - DIA.
(2 TYP.)

(3 TYP.)

R

H

E

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.57 40.0
D 1.34 34.0
E 1.22 Max. 31.0 Max.
F 0.90 23.0
G 0.85 21.5
H 0.79 20.0

J 0.71 18.0

N

S - M5 THD
(3 TYP.)

R

L

E2

H

P

Dimensions Inches Millimeters

K 0.67 17.0

L 0.63 16.0
M 0.51 13.0
N 0.47 12.0

P 0.28 7.0
Q 0.256 Dia. Dia. 6.5
R 0.16 4.0

S M5 Metric M5

R

TAB#110 t=0.5

G

G2
E2

C1

E1
G1

Description:

Mitsubishi IGBT Modules are de­signed for use in switching appli­cations. Each module consists of
two IGBTs in a half bridge configu­ration with each transistor having
a reverse-connected super-fast re­covery free-wheel diode. All com­ponents and interconnects are iso­lated from the heat sinking base­plate, offering simplified system
assembly and thermal manage­ment.

Features:

u Low Drive Power
u Low V

CE(sat)

u Discrete Super-Fast Recovery

Free-Wheel Diode

u High Frequency Operation
u Isolated Baseplate for Easy

Heat Sinking

Applications:

u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM75DY-24H
is a 1200V (V

), 75 Ampere

CES

Dual IGBT Module.

Type Current Rating V

Amperes Volts (x 50)

CM 75 24

CES

Sep.1998

MITSUBISHI IGBT MODULES

CM75DY-24H

HIGH POWER SWITCHING USE

INSULA TED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM75DY-24H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C
CM

E

EM

c

Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m
Weight – 190 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

j(max)

iso

rating.

–40 to 150 °C
–40 to 125 °C

1200 Volts

±20 Volts

75 Amperes

150* Amperes

75 Amperes

150* Amperes

600 Watts

2500 Vrms

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 7.5mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 75A, VGE = 15V – 2.5 3.4** Volts

IC = 75A, VGE = 15V , Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

EC

VCC = 600V, IC = 75A, VGE = 15V – 375 – nC

IE = 75A, VGE = 0V – – 3.5 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay T ime t

d(on)

Load Rise Time t
Switching Turn-off Delay T ime t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VGE = 0V, VCE = 10V – – 5.3 nF

VCC = 600V , IC = 75A, – – 350 ns

V

= V

GE1

= 15V , RG = 4.2Ω – – 250 ns

GE2

IE = 75A, diE/dt = –150A/µs – – 250 ns
IE = 75A, diE/dt = –150A/µs – 0.56 – µC

– – 15 nF

– – 3 nF
– – 150 ns

– – 350 ns

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.075 °C/W

Per IGBT – – 0.21 °C/W

Per FWDi – – 0.47 °C/W

Sep.1998