Mitsubishi Electric Corporation Semiconductor Group CM75DU-12H Datasheet

MITSUBISHI IGBT MODULES

CM75DU-12H

HIGH POWER SWITCHING USE

INSULATED TYPE

TC Measured

Point

E

CM

D

C

3-M5 Nuts

O

R

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.7 94.0
B 3.15±0.01 80.0±0.25
C 1.89 48.0
D 0.94 24.0
E 0.28 7.0
F 0.67 17.0
G 0.91 23.0
H 0.91 23.0

J 0.43 11.0
K 0.71 18.0
L 0.16 4.0

GF

P PQ

E2

A
B

H

J

E2 C1C2E1

G1 E1 G2 G2

M

N

O

2 - Mounting
Holes

K

(6.5 Dia.)

L

TAB#110 t=0.5

S

V

U

Description:

Mitsubishi IGBT Modules are de­signed for use in switching applica­tions. Each module consists of two
IGBTs in a half-bridge configuration

T

with each transistor having a re­verse-connected super-fast recov­ery free-wheel diode. All compo­nents and interconnects are iso­lated from the heat sinking base­plate, offering simplified system

E2
G2

assembly and thermal manage­ment.

Features:

C1

E1
G1

u Low Drive Power
u Low V

CE(sat)

u Discrete Super-Fast Recovery

Free-Wheel Diode

u High Frequency Operation
u Isolated Baseplate for Easy

Heat Sinking

Applications:

u AC Motor Control

Dimensions Inches Millimeters

M 0.47 12.0
N 0.53 13.5
O 0.1 2.5

P 0.63 16.0
Q 0.98 25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5

S 0.3 7.5

T 0.83 21.2
U 0.16 4.0

V 0.51 13.0

u Motion/Servo Control
u UPS
u Welding Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM75DU-12H is a
600V (V

), 75 Ampere Dual

CES

IGBT Module.

Type Amperes Volts (x 50)

Current Rating V

CM 75 12

CES

Sep.1998

MITSUBISHI IGBT MODULES

CM75DU-12H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM75DU-12H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C
CM

E

EM

c

Mounting Torque, M5 Main Terminal – 2.5~3.5 N · m
Mounting Torque, M6 Mounting – 3.5~4.5 N · m
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
600 Volts
±20 Volts

75 Amperes

150* Amperes

75 Amperes

150* Amperes

310 Watts

2500 Vrms

rating.

j(max)

Static Electrical Characteristics,Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 7.5mA, VCE = 10V 4.5 6 7.5 Volts

IC = 75A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts

IC = 75A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

G

EC

VCC = 300V, IC = 75A, VGE = 15V – 150 – nC

IE = 75A, VGE = 0V – – 2.6 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies

oes

res

d(on)

r

d(off)

f

rr

rr

VCE = 10V, VGE = 0V – – 3.6 nF

VCC = 300V, IC = 75A, – – 100 ns

V

= V

GE1

GE2

RG = 8.3Ω, Resistive – – 200 ns

Load Switching Operation – – 300 ns
IE = 75A, diE/dt = -150A/µs – – 160 ns
IE = 75A, diE/dt = -150A/µs – 0.18 – µC

= 15V, – – 250 ns

– – 6.6 nF

––1nF

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

Q Per IGBT 1/2 Module – – 0.4 °C/W

th(j-c)

D Per FWDi 1/2 Module – – 0.9 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.035 – °C/W

Sep.1998