Mitsubishi Electric Corporation Semiconductor Group CM600HU-24H Datasheet
MITSUBISHI IGBT MODULES
CM600HU-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
2 - M4 NUTS
C
A
B
HE
J
G
D
G
E
K
E
L
C
CM
2 - M8 NUTS
N(4 - Mounting
Holes)
F
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one
TC Measured Point
IGBT in a single configuration with
a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base-
P
M
plate, offering simplified system
assembly and thermal management.
Features:
u Low Drive Power
u Low V
E
E
G
C
u Discrete Super-Fast Recovery
u High Frequency Operation
u Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.66±0.01 93.0±0.25
C 3.15 80.0
D 2.44±0.01 62.0±0.25
E 0.53 13.5
F 0.37 9.5
G 0.57 14.5
Dimensions Inches Millimeters
H 0.96 24.5
J 0.22 5.5
K 1.14 29.0
L 0.85 21.5
M 1.34 +0.04/-0.02 34 +1.0/-0.5
N 0.26 Dia. 6.5 Dia.
P 1.02 +0.04/-0.02 26 +1.0/-0.5
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM600HU-24H is a
1200V (V
), 600 Ampere Single
CES
IGBT Module.
Type Amperes Volts (x 50)
Current Rating V
CM 600 24
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM600HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM600HU-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M8 Main Terminal – 8.8~10.8 N · m
Mounting Torque, M6 Mounting – 3.5~4.5 N · m
Mounting Torque, M4 Terminal – 1.3~1.7 N · m
Weight – 600 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 2 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 60mA, VCE = 10V 4.5 6 7.5 Volts
IC = 600A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts
IC = 600A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
VCC = 600V, IC = 600A, VGE = 15V – 2250 – nC
IE = 600A, VGE = 0V – – 3.2 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V – – 31.5 nF
VCC = 600V, IC = 600A, – – 300 ns
V
= V
GE1
= 15V, – – 700 ns
GE2
RG = 2.1Ω, Resistive – – 450 ns
Load Switching Operation – – 350 ns
IE = 600A, diE/dt = -1200A/µs – – 300 ns
IE = 600A, diE/dt = -1200A/µs – 3.3 – µC
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
600 Amperes
1200* Amperes
600 Amperes
1200* Amperes
3100 Watts
2500 Vrms
rating.
j(max)
rating.
j(max)
––90nF
––18nF
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
Q Per IGBT Module – – 0.04 °C/W
th(j-c)
D Per FWDi Module – – 0.06 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.015 – °C/W
Sep.1998
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