Mitsubishi Electric Corporation Semiconductor Group CM600HU-24F Datasheet

CM600HU-24F

MITSUBISHI IGBT MODULES

CM600HU-24F

HIGH POWER SWITCHING USE

¡IC...................................................................600A

CES ......................................................... 1200V

¡V
¡Insulated Type
¡1-elements in a pack

APPLICATION

General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

110

±0.25

2–M4NUTS

5.5

14.5

17.5

6.5

13.5 2924.5

G

E

Tc measured point

93

15.4

6.5

E

10.7

21.5

23.6

C

CM

18

2–M8NUTS

9.5

26.8

10.7

±0.25

80

62

4–φ6.5MOUNTING HOLES

Dimensions in mm

4

+1

-0.5

+1

26

LABEL

-0.5

34

E

E
G

RTC

CIRCUIT DIAGRAM

C

Aug. 1999

MAXIMUM RATINGS (Tj = 25°C)

MITSUBISHI IGBT MODULES

CM600HU-24F

HIGH POWER SWITCHING USE

Symbol Parameter

CES

V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

G-E Short
C-E Short

C = 25°C

T
Pulse (Note 2)

C = 25°C

T
Pulse (Note 2)

C = 25°C

T

Main terminal to base plate, AC 1 min.

Conditions UnitRatings

Main Terminal M8

Torque strength

—

Mounting holes M6
G(E) Terminal M4

—

Weight

ELECTRICAL CHARACTERISTICS

Symbol Parameter
ICES
V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
Rth(j-c’)Q

G

R

Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).

1 : Tc measured point is indicated in OUTLINE DRAWING.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

3 : If you use this value, Rth(f-a) should be measured just under the chips.

*

Collector cutoff current
Gate-emitter threshold voltage

Gate leakage current
Collector-emitter saturation voltage

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Note 1

)

Reverse recovery charge
Emitter-collector voltage

Note 1

)

Thermal resistance

*1

Contact thermal resistance
Thermal resistance
External gate resistance

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

j) should not increase beyond 150°C.

Typical value

(Tj = 25°C)

Test conditions

VCE = VCES, VGE = 0V

C = 60mA, VCE = 10V

I
V

GE = VCES, VCE = 0V
j = 25°C

T

j = 125°C

T

CE = 10V

V

GE = 0V

V

CC = 600V, IC = 600A, VGE = 15V

V

V

CC = 600V, IC = 600A
GE1 = VGE2 = 15V

V

G = 1.0Ω, Inductive load switching operation

R

E = 600A

I

E = 600A, VGE = 0V

I

I

C = 600A, VGE = 15V

IGBT part
FWDi part
Case to fin, Thermal compoundapplied
Tc measured point is just under the chips

Min. Max.

*2

1.0

j) does not exceed Tjmax rating.

—

57

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

1200

±20
600

1200

600
1200
1900

–40 ~ +150
–40 ~ +125

2500

8.8 ~ 10.8

3.5 ~ 4.5

1.3 ~ 1.7
600

Limits

T yp.

—

2

V
V

A

A

W

°C
°C

V
N • m
N • m
N • m

g

Unit

mA

6V

—

1.8

1.9
—
—
—

6600

—
—
—
—
—

43.2
—
—
—

0.015
—
—

80

2.4
—

230

10

6.0
—

300
150
800
300
500

—

3.2

0.063

0.075
—

0.032
10

µA

V

nF

nC

ns

ns

µC

V

°C/W

✽3

Ω

Aug. 1999