Mitsubishi Electric Corporation Semiconductor Group CM600HU-12H Datasheet
J
C
G
D
2 - M4 NUTS
P
MITSUBISHI IGBT MODULES
CM600HU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
HE
G
E
K
L
E
C
CM
M (4 - Mounting
Holes)
F
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one
T
Measured Point
C
2 - M8 NUTS
IGBT in a single configuration with
a reverse-connected super-fast re-
N
covery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system
assembly and thermal management.
E
E
G
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 3.66±0.01 93.0±0.25
C 2.44 62.0
D 1.89±0.01 48.0±0.25
E 0.53 13.5
F 0.49 12.55
G 0.39 10.0
C
Dimensions Inches Millimeters
H 1.02 26.0
J 0.37 9.5
K 1.14 29.0
L 0.81 20.5
M 0.26 Dia. 6.5 Dia.
N 1.34 +0.04/-0.02 34 +1.0/-0.5
P 1.02 +0.04/-0.02 26 +1.0/-0.5
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM600HU-12H is a
600V (V
), 600 Ampere Single
CES
IGBT Module.
Current Rating V
Type Amperes Volts (x 50)
CM 600 12
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM600HU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM600HU-12H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M8 Main Terminal – 8.8~10.8 N · m
Mounting Torque, M6 Mounting – 3.5~4.5 N · m
Mounting Torque, M4 Terminal – 1.3~1.7 N · m
Weight – 450 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 60mA, VCE = 10V 4.5 6 7.5 Volts
IC = 600A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts
IC = 600A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
VCC = 300V, IC = 600A, VGE = 15V – 1200 – nC
IE = 600A, VGE = 0V – – 2.6 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V – – 28.8 nF
VCC = 300V, IC = 600A, – – 300 ns
V
= V
GE1
= 15V, – – 600 ns
GE2
RG = 1.0Ω, Resistive – – 350 ns
Load Switching Operation – – 300 ns
IE = 600A, diE/dt = -1200A/µs – – 160 ns
IE = 600A, diE/dt = -1200A/µs – 1.44 – µC
-40 to 150 °C
-40 to 125 °C
600 Volts
±20 Volts
600 Amperes
1200* Amperes
600 Amperes
1200* Amperes
1560 Watts
2500 Vrms
rating.
j(max)
rating.
j(max)
– – 52.8 nF
– – 7.8 nF
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
Q Per IGBT Module – – 0.08 °C/ W
th(j-c)
D Per FWDi Module – – 0.12 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.02 – °C/W
Sep.1998
Loading...