Mitsubishi Electric Corporation Semiconductor Group CM600HA-5F Datasheet
MITSUBISHI IGBT MODULES
CM600HA-5F
HIGH POWER SWITCHING USE
INSULA TED TYPE
E
H G
F
D
J
K
y
E
x
V -THD.
(2 TYP.)
T
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 3.66 93.0±0.25
C 0.63 16.0
D 0.30 7.5
E 0.69 17.5
F 1.14 29.0
G 0.79 20.0
H 0.94 24.0
J 0.31 7.9
K 0.24 6.0
L 2.44 62.0
M 1.89 48.0
E
G
B
A
E
E
G
W - DIA. (4 TYP.)
Q
P
M
C
C
N
L
Description:
Mitsubishi IGBT Modules are designed for use in switching appli-
R
cations. Each module consists of
one IGBT in a single configura-
U - THD.
(2 TYP.)
tion, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat
S
sinking baseplate, offering simplified system assembly and thermal
management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast
C
Recovery
Free-Wheel Diodes
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u UPS
u Forklift
Dimensions Inches Millimeters
N 0.39 10.0
P 0.39 10.0
Q 0.51 13.0
R 0.33 8.5
S 1.42 36.0
T 1.02 25.8
U M6 Metric M6
V M4 Metric M4
W 0.26 Dia. 6.5
X 0.79 20.0
Y 0.35 9.0
+1.0
–0.5
+1.0
–0.5
Ordering Information:
Example: Select the complete
nine digit module part number you
desire from the table below - i.e.
CM600HA-5F is a 250V (V
CES
),
600 Ampere Single IGBT Module.
Current Rating V
Type Amperes Volts (x 50)
CM 600 5
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM600HA-5F
HIGH POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM600HA-5F Units
Junction T emperature T
Storage T emperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current (TC = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M6 Main Terminal — 1.96 ~ 2.94 N · m
Mounting Torque, M6 Mounting — 1.96 ~ 2.94 N · m
Mounting Torque, M4 Terminal — 0.98 ~ 1.47 N · m
Weight — 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
iso
rating.
-40 to 150 °C
-40 to 125 °C
250 Volts
±20 Volts
600 Amperes
1200 Amperes
600 Amperes
1200 Amperes
960 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V — — 1.0 mA
CES
, VCE = 0V — — 0.5 µA
GES
IC = 60mA, VCE = 10V 3.0 4.0 5.0 V olts
IC = 600A, VGE = 10V, — 1.2 1.7** Volts
IC = 600A, VGE = 10V, Tj = 150°C — 1.1 — Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 100V, IC = 600A, VGE = 10V — 2200 — nC
IE = 600A, VGE = 0V — — 2.0 Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay T ime t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V — — 7.5 nF
VCC = 100V, IC = 600A, — — 4000 ns
V
= V
GE1
= 10V , RG = 4.2Ω, — — 1000 ns
GE2
Resistive Load — — 500 ns
IE = 600A, diE/dt = -1200A/µs — — 300 ns
IE = 600A, diE/dt = -1200A/µs — 9.5 — µC
— — 165 nF
— — 5.6 nF
— — 1000 ns
Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied — — 0.040 °C/W
Per IGBT — — 0.13 °C/W
Free Wheel Diode — — 0.19 °C/W
Sep.1998
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