Mitsubishi Electric Corporation Semiconductor Group CM600HA-24H Datasheet
A
C
Y - THD (2 TYP.)
MITSUBISHI IGBT MODULES
CM600HA-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
M
E
ED
T
X - DIA.
(4 TYP.)
H
W
E
G
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 3.66±0.008 93.0±0.25
D 2.44±0.008 62.0±0.25
E 1.57 40.0
F 1.42 Max. 36.0 Max.
G 1.14 29.0
H 1.00 Max. 25.5 Max.
J 0.94 24.5
K 0.93 24.0
L 0.83 21.0
M 0.71 18.0
U
G
Q
E
E
L G
J J
S
C
N
Z
Dimensions Inches Millimeters
N 0.69 17.5
P 0.61 15.5
Q 0.51 13.0
R 0.49 12.5
S 0.45 11.5
T 0.43 11.0
U 0.35 9.0
V M8 Metric M8
W 0.28 7.0
X 0.256 Dia. Dia. 6.50
Y M4 Metric M4
Z 0.12 3.0
R
K
P
V - THD
(2 TYP.)
F
C
B
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module consists
of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified system assembly and thermal management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM600HA24H is a 1200V (V
), 600 Am-
CES
pere Single IGBT Module.
Type Current Rating V
Amperes Volts (x 50)
CM 600 24
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM600HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM600HU-12H Units
Junction T emperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M8 Main Terminal – 8.83~10.8 N · m
Mounting Torque, M6 Mounting – 1.96~2.94 N · m
Mounting Torque, M4 T erminal – 0.98~1.47 N · m
Weight – 560 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
iso
rating.
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
600 Amperes
1200* Amperes
600 Amperes
1200* Amperes
4100 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 2.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 60mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 600A, VGE = 15V – 2.5 3.4** Volts
IC = 600A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 600V, IC = 600A, VGE = 15V – 3000 – nC
IE = 600A, VGE = 0V – – 3.5 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
d(off)
f
rr
rr
VGE = 0V , VCE = 10V – – 42 nF
VCC = 600V, IC = 600A, – – 700 ns
V
= V
GE1
= 15V, RG = 2.1Ω – – 450 ns
GE2
IE = 600A, diE/dt = –1200A/µs – – 250 ns
IE = 600A, diE/dt = –1200A/µs – 4.46 – µC
– – 120 nF
– – 24 nF
– – 300 ns
– – 350 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.035 °C/W
Per IGBT – – 0.03 °C/W
Per FWDi – – 0.06 °C/W
Sep.1998
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