Mitsubishi Electric Corporation Semiconductor Group CM450HA-5F Datasheet
MITSUBISHI IGBT MODULES
CM450HA-5F
HIGH POWER SWITCHING USE
INSULA TED TYPE
A
B
DE
S
R
R
P - THD.
(2 TYP.)
K
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.82 97.0
B 3.15 80.0
C 0.69 17.5
D 1.14 29.0
E 1.04 26.5
F 1.89 48.0
G 0.63 16.0
H 0.24 6.0
J 0.26 6.7
E
E
G
H
J
LABEL
E
E
G
C
C
N - DIA.
(2 TYP.)
Dimensions Inches Millimeters
K 1.14 29.0
L 1.42 36.0
M 0.28 7.0
N 0.26 Dia. Dia. 6.5
P M4 Metric M4
Q M6 Metric M6
R 0.51 13.0
S 0.35 9.0
(2 TYP.)
FG
L
C
Q - THD.
Description:
M
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
one IGBT in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat
sinking baseplate, offering simplified system assembly and thermal
management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diodes
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u UPS
u Forklift
Ordering Information:
Example: Select the complete
+1.0
–0.5
+1.0
–0.5
nine digit module part number you
desire from the table below - i.e.
CM450HA-5F is a 250V (V
CES
),
450 Ampere Single IGBT Module.
Current Rating V
Type Amperes Volts (x 50)
CM 450 5
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM450HA-5F
HIGH POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM450HA-5F Units
Junction T emperature T
Storage T emperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current (TC = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M6 Main Terminal — 1.96 ~ 2.94 N · m
Mounting Torque, M6 Mounting — 1.96 ~ 2.94 N · m
Mounting Torque, M4 Terminal — 0.98 ~ 1.47 N · m
Weight — 270 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
iso
rating.
-40 to 150 °C
-40 to 125 °C
250 Volts
±20 Volts
450 Amperes
900* Amperes
450 Amperes
900* Amperes
735 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V — — 1.0 mA
CES
, VCE = 0V — — 0.5 µA
GES
IC = 45mA, VCE = 10V 3.0 4.0 5.0 Volts
IC = 450A, VGE = 10V, — 1.2 1.7** Volts
IC = 450A, VGE = 10V, Tj = 150°C — 1.1 — Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 100V, IC = 450A, VGE = 10V — 1760 — nC
IE = 450A, VGE = 0V — — 2.0 Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay T ime t
Load Rise Time t
Switching Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VGE = 0V, VCE = 10V — — 6 nF
VCC = 100V, IC = 450A, — — 2700 ns
V
= V
GE1
= 10V , RG = 5.6Ω, — — 900 ns
GE2
Resistive Load — — 500 ns
IE = 450A, diE/dt = -900A/µs — — 300 ns
IE = 450A, diE/dt = -900A/µs — 7.6 — µC
— — 132 nF
— — 4.5 nF
— — 1200 ns
Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied — — 0.090 °C/W
Per IGBT — — 0.17 °C/W
Per Free Wheel Diode — — 0.23 °C/W
Sep.1998
Loading...