Mitsubishi Electric Corporation Semiconductor Group CM400HU-24H Datasheet

MITSUBISHI IGBT MODULES

CM400HU-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

A
B

J

HE

K

L

M(4 - Mounting
Holes)

F

C

D

2 - M4 NUTS

P

G

G

E

E

C

CM

Description:

2 - M6 NUTS

TC Measured Point

Mitsubishi IGBT Modules are de­signed for use in switching applica­tions. Each module consists of one
IGBT in a single configuration with
a reverse-connected super-fast re­covery free-wheel diode. All com-

N

ponents and interconnects are iso­lated from the heat sinking base­plate, offering simplified system
assembly and thermal manage­ment.

Features:

u Low Drive Power
u Low V

E

C

u Discrete Super-Fast Recovery

CE(sat)

Free-Wheel Diode

E

G

u High Frequency Operation
u Isolated Baseplate for Easy

Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.21 107.0
B 3.66±0.01 93.0±0.25
C 2.44 62.0
D 1.89±0.01 48.0±0.25
E 0.53 13.5
F 0.37 9.5
G 0.45 11.5

Dimensions Inches Millimeters

H 0.96 24.5

J 0.31 8.0
K 1.14 29.0
L 0.81 20.5
M 0.26 Dia. 6.5 Dia.
N 1.34 +0.04/-0.02 34 +1.0/-0.5
P 1.02 +0.04/-0.02 26 +1.0/-0.5

Applications:

u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM400HU-24H is a
1200V (V

), 400 Ampere Single

CES

IGBT Module.

Type Amperes Volts (x 50)

Current Rating V

CM 400 24

CES

Sep.1998

MITSUBISHI IGBT MODULES

CM400HU-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM400HU-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C
CM

E

EM

c

Mounting Torque, M6 Main Terminal, M6 Mounting – 3.5~4.5 N · m
Mounting Torque, M4 Terminal – 1.3~1.7 N · m
Weight – 450 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
400 Amperes

800* Amperes

400 Amperes
800* Amperes
2100 Watts

2500 Vrms

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 2 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 40mA, VCE = 10V 4.5 6 7.5 Volts

IC = 400A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts

IC = 400A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

G

EC

VCC = 600V, IC = 400A, VGE = 15V – 1500 – nC

IE = 400A, VGE = 0V – – 3.2 Volts

rating.

j(max)

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies

oes

res

d(on)

r

d(off)

f

rr

rr

VCE = 10V, VGE = 0V – – 21 nF

VCC = 600V, IC = 400A, – – 250 ns

V

= V

GE1

= 15V, – – 350 ns

GE2

RG = 0.78Ω, Resistive – – 350 ns

Load Switching Operation – – 350 ns
IE = 400A, diE/dt = -800A/µs – – 300 ns
IE = 400A, diE/dt = -800A/µs – 2.2 – µC

––60nF

––12nF

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

Q Per IGBT Module – – 0.06 °C/W

th(j-c)

D Per FWDi Module – – 0.09 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.02 – °C/W

Sep.1998