Mitsubishi Electric Corporation Semiconductor Group CM400HA-12H Datasheet
A
Q M H N
S
MITSUBISHI IGBT MODULES
CM400HA-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
V–DIA.(4 TYP.)
D
F
X–M4 THD.
(2 TYP.)
J
E
E
CM
G
P
B
KK
R
C
U
G
C
W–M6 THD.
(2 TYP.)
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module consists
of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
E
L
baseplate, offering simplified system assembly and thermal management.
T
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
E
E
G
C
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 3.661±0.01 93.0±0.25
C 2.44 62.0
D 1.89±0.01 48.0±0.25
E 1.42 Max. 36.0 Max.
F 1.34 34.0
G 1.18 30.0
H 1.14 29.0
J 0.98 Max. 25.0 Max.
K 0.94 24.0
L 0.93 23.5
Dimensions Inches Millimeters
M 0.83 21.0
N 0.69 17.5
P 0.63 16.0
Q 0.51 13.0
R 0.43 11.0
S 0.35 9.0
T 0.28 7.0
U 0.12 3.0
V 0.26 Dia. Dia. 6.5
W M6 Metric M6
X M4 Metric M4
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400HA12H is a 600V (V
), 400 Am-
CES
pere Single IGBT Module.
Type Current Rating V
Amperes Volts (x 50)
CM 400 12
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM600HU-12H Units
Junction T emperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M6 Main Terminal – 1.96~2.94 N · m
Mounting Torque, M6 Mounting – 1.96~2.94 N · m
Mounting Torque, M4 Terminal – 0.98~1.47 N · m
Weight – 400 Grams
Isolation Voltage (Main Terminal to BAseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
j(max)
rating.
-40 to 150 °C
-40 to 125 °C
600 Volts
±20 Volts
400 Amperes
800* Amperes
400 Amperes
800* Amperes
1500 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ . Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 400A, VGE = 15V – 2.1 2.8** Volts
IC = 400A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 400V, IC = 400A, VGE = 15V – 1200 – nC
IE = 400A, VGE = 0V – – 2.8 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ . Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V , VCE = 10V – – 14 nF
VCC = 300V, IC = 400A, – – 600 ns
V
= V
GE1
= 15V, RG = 1.6Ω – – 350 ns
GE2
IE = 400A, diE/dt = –800A/µs – – 110 ns
IE = 400A, diE/dt = –800A/µs – 1.08 – µC
– – 40 nF
– – 8 nF
– – 350 ns
– – 300 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.040 °C/W
Per IGBT – – 0.085 °C/W
Per FWDi – – 0.18 °C/W
Sep.1998
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